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Development of CMOS Pixel Sensors fully adapted to the ILD Vertex Detector Requirements

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arxiv 1203.3750 v1 pith:VTX33ADP submitted 2012-03-16 physics.ins-det hep-ex

classification physics.ins-dethep-ex
keywords cmossensorsdetectordevelopmentpixelrequirementsvertexachievement
verification ladder T0 review T1 audit T2 compute T3 formal

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CMOS Pixel Sensors are making steady progress towards the specifications of the ILD vertex detector. Recent developments are summarised, which show that these devices are close to comply with all major requirements, in particular the read-out speed needed to cope with the beam related background. This achievement is grounded on the double- sided ladder concept, which allows combining signals generated by a single particle in two different sensors, one devoted to spatial resolution and the other to time stamp, both assembled on the same mechanical support. The status of the development is overviewed as well as the plans to finalise it using an advanced CMOS process.

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Cited by 1 Pith paper

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  1. The ILD Detector: A Versatile Detector for an Electron-Positron Collider at Energies up to 1 TeV

    hep-ex 2025-06 conditional novelty 3.0 of 10

    The ILD concept paper presents a particle-flow-optimized detector design, its performance requirements, technology options, and readiness for both linear and circular electron-positron colliders up to 1 TeV.

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