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Dispersive Readout of a Few-Electron Double Quantum Dot with Fast rf Gate-Sensors
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We report the dispersive charge-state readout of a double quantum dot in the few-electron regime using the in situ gate electrodes as sensitive detectors. We benchmark this gate-sensing technique against the well established quantum point contact (QPC) charge detector and find comparable performance with a bandwidth of 10 MHz and an equivalent charge sensitivity of 6.3 x 10-3 e/ \sqrt Hz. Dispersive gate-sensing alleviates the burden of separate charge detectors for quantum dot systems and promises to enable readout of qubits in scaled-up arrays.
Forward citations
Cited by 2 Pith papers
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20 Second Parity Lifetime in an InAs--Pb Tetron Device
InAs-Pb hybrid nanowire tetron achieves ~20 s parity switching time with h/2e-periodic bimodal capacitance shifts, using a new rf technique to resolve wire-end states at μeV precision.
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Distinct Lifetimes for $X$ and $Z$ Loop Measurements in a Majorana Tetron Device
A tetron device shows X and Z parity loops switching at 14.5 microseconds and 12.4 milliseconds, with assignment errors of 16% and 0.5%.
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