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Edge excitation geometry for studying intrinsic emission spectra of bulk n-InP

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arxiv 1306.2928 v2 pith:DZMUVYKC submitted 2013-06-12 cond-mat.mtrl-sci

Oleg Semyonov , Arsen Subashiev , Zhichao Chen , Serge Luryi This is my paper · ORCID
classification cond-mat.mtrl-sci
keywords edgeemissiongeometryintrinsicphotoluminescencestudyingusedbroadside
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The shape of the photoluminescence line excited at an edge face of InP wafer and recorded from the broadside is used to investigate the intrinsic emission spectrum. The procedure is much less sensitive to the surface properties and the carrier kinetics than the conventional methods used with the reflection or transmission geometry of photoluminescence. Our method provides a tool for studying the effects of non-equilibrium distribution of minority carriers in doped direct-band semiconductors.

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