Paper Citation Record · LEDGER

RF compressibility of topological surface and interface states in metal-hBN-Bi2Se3 capacitors

As of 23 August 2026, this Paper Citation Record lists 37 of 37 outbound references and 0 inbound Pith citation observations for arXiv:1908.05270.

A citation records a reference. It does not transfer a finding from one paper to another.

pith.paper-citation-record.v1
1908.05270 v1

Coverage vector

measured 37 of 37 reference resolution

Typed states for the displayed outbound observations.

Source: paper_references, paper_reference_links, observed 2026-08-14T13:29:41.539779Z

measured 37 of 37 standing notices

One-hop event checks from named stored sources.

Source: scholarly_work_events, retraction_status_cache, observed 2026-08-23T06:30:58.430688+00:00

measured 0 of 0 inbound itemization

Pith citing papers itemized under the disclosed page cap.

Source: paper_references, paper_reference_links

measured 0 of 1 external citation measurements

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Source: cited_works

Reference resolution

37 of 37 outbound references displayed

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External citation measurements

No source-named external measurement is stored.

Outbound references

Observation 5c61b203-97ba-4956-bc95-c1ab2b6174ff · outbound

This paper cites Transport scattering time probed through rf admittance of a graphene capacitor.

RF compressibility of topological surface and interface states in metal-hBN-Bi2Se3 capacitors Transport scattering time probed through rf admittance of a graphene capacitor

Reference 1

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T13:29:42.189013Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.

Observation ad9c405a-591d-4811-9466-bf3b88800b0b · outbound

This paper cites Supercollision cooling in undoped graphene.

RF compressibility of topological surface and interface states in metal-hBN-Bi2Se3 capacitors Supercollision cooling in undoped graphene

Reference 2

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T13:29:42.173811Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.

Observation bf7404be-5f4c-4730-b3b9-1f1363e74f83 · outbound

This paper cites Single carbon nanotube transistor at GHz frequency.

RF compressibility of topological surface and interface states in metal-hBN-Bi2Se3 capacitors Single carbon nanotube transistor at GHz frequency

Reference 3

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T13:29:42.158613Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.

Observation 5661b317-eabc-44a0-aee3-c3bbc8e16838 · outbound

This paper cites An On-Demand Coherent Single-Electron Source.

RF compressibility of topological surface and interface states in metal-hBN-Bi2Se3 capacitors An On-Demand Coherent Single-Electron Source

Reference 4

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T13:29:42.143166Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.

Observation 518855d0-b12b-49d2-a1ab-930251e91123 · outbound

This paper cites Radio frequency electrical transduction of graphene mechanical resonators.

RF compressibility of topological surface and interface states in metal-hBN-Bi2Se3 capacitors Radio frequency electrical transduction of graphene mechanical resonators

Reference 5

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T13:29:42.125548Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.

Observation 15cc14c0-e4a3-4a35-9f18-58f57b3a46d4 · outbound

This paper cites Surface states at steam-grown silicon-silicon dioxide interfaces.

RF compressibility of topological surface and interface states in metal-hBN-Bi2Se3 capacitors Surface states at steam-grown silicon-silicon dioxide interfaces

Reference 6

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T13:29:42.107016Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.

Observation 191babb4-bb8b-404c-966b-cab1fb3013aa · outbound

This paper cites Ultra-long wavelength Dirac plasmons in graphene capacitors.

RF compressibility of topological surface and interface states in metal-hBN-Bi2Se3 capacitors Ultra-long wavelength Dirac plasmons in graphene capacitors

Reference 7

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T13:29:42.088949Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.

Observation 2090e64c-46b1-4f7d-9d50-16dc8c84c8b5 · outbound

This paper cites A graphene Zener–Klein 9 transistor cooled by a hyperbolic substrate.

RF compressibility of topological surface and interface states in metal-hBN-Bi2Se3 capacitors A graphene Zener–Klein 9 transistor cooled by a hyperbolic substrate

Reference 8

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T13:29:42.071424Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.

Observation ab3975a7-1167-4719-a0f8-c685fde97010 · outbound

This paper cites Electrically Detected Interferometry of Majorana Fermions in a Topological Insulator.

RF compressibility of topological surface and interface states in metal-hBN-Bi2Se3 capacitors Electrically Detected Interferometry of Majorana Fermions in a Topological Insulator

Reference 9

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T13:29:42.054601Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.

Observation 7ad86a0c-f12a-464c-98fa-1e290bdac9f1 · outbound

This paper cites Weak-link Josephson Junctions Made from Topological Crystalline Insulators.

RF compressibility of topological surface and interface states in metal-hBN-Bi2Se3 capacitors Weak-link Josephson Junctions Made from Topological Crystalline Insulators

Reference 10

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T13:29:42.038895Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.

Observation 895558c2-649d-482e-94c9-36291c69e53e · outbound

This paper cites Proximity-Induced Superconductivity and Quantum Interference in Topological Crystalline Insulator SnTe Thin-Film Devices.

RF compressibility of topological surface and interface states in metal-hBN-Bi2Se3 capacitors Proximity-Induced Superconductivity and Quantum Interference in Topological Crystalline Insulator SnTe Thin-Film Devices

Reference 11

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T13:29:42.023829Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.

Observation 754f94e4-7610-415d-9453-58ac0a482169 · outbound

This paper cites Gapless Andreev bound states in the quantum spin Hall insulator HgTe.

RF compressibility of topological surface and interface states in metal-hBN-Bi2Se3 capacitors Gapless Andreev bound states in the quantum spin Hall insulator HgTe

Reference 12

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T13:29:42.009154Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.

Observation 3a1b7c3d-e750-489d-9f0a-0e969de4138c · outbound

This paper cites Dynamical separation of bulk and edge transport in HgTe-based 2D topological insulators.

RF compressibility of topological surface and interface states in metal-hBN-Bi2Se3 capacitors Dynamical separation of bulk and edge transport in HgTe-based 2D topological insulators

Reference 13

Resolution: verified exact; local_arxiv, observed 2026-08-14T13:29:41.587527Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.

Observation e3f0cbc2-e10d-4426-84a2-e332f15817a7 · outbound

This paper cites Observation of Volkov-Pankratov states in topological HgTe heterojunctions using high-frequency compressibility.

RF compressibility of topological surface and interface states in metal-hBN-Bi2Se3 capacitors Observation of Volkov-Pankratov states in topological HgTe heterojunctions using high-frequency compressibility

Reference 14

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T13:29:41.991739Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.

Observation 4f31810d-66ff-4c38-927c-f3da2645ba6f · outbound

This paper cites rf Quantum Capacitance of the Topological Insulator Bi2Se3 in the Bulk Depleted Regime for Field-Effect Transistors.

RF compressibility of topological surface and interface states in metal-hBN-Bi2Se3 capacitors rf Quantum Capacitance of the Topological Insulator Bi2Se3 in the Bulk Depleted Regime for Field-Effect Transistors

Reference 15

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T13:29:41.975826Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.

Observation f4936a35-b0e9-401b-bad8-30b8bdec2171 · outbound

This paper cites van der Waals Epitaxial Growth of Atomically Thin Bi 2 Se 3 and Thickness-Dependent Topological Phase Transition.

RF compressibility of topological surface and interface states in metal-hBN-Bi2Se3 capacitors van der Waals Epitaxial Growth of Atomically Thin Bi 2 Se 3 and Thickness-Dependent Topological Phase Transition

Reference 16

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T13:29:41.957052Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.

Observation f583d108-17c5-4085-938a-ec23eb132cc0 · outbound

This paper cites Micrometer-Scale Ballistic Transport in Encapsulated Graphene at Room Temperature.

RF compressibility of topological surface and interface states in metal-hBN-Bi2Se3 capacitors Micrometer-Scale Ballistic Transport in Encapsulated Graphene at Room Temperature

Reference 17

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T13:29:41.940152Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.

Observation 149ac400-167d-488c-ae6a-f6b05dd32d90 · outbound

This paper cites Controlling Spin Relaxation in Hexagonal BN-Encapsulated Graphene with a Transverse Electric Field.

RF compressibility of topological surface and interface states in metal-hBN-Bi2Se3 capacitors Controlling Spin Relaxation in Hexagonal BN-Encapsulated Graphene with a Transverse Electric Field

Reference 18

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T13:29:41.924867Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.

Observation ed90d3be-4a48-4372-85c8-0f382e786452 · outbound

This paper cites A Raman and Far-Infrared Investigation of Phonons in the Rhombohedra1 V2-VI3 Compounds.

RF compressibility of topological surface and interface states in metal-hBN-Bi2Se3 capacitors A Raman and Far-Infrared Investigation of Phonons in the Rhombohedra1 V2-VI3 Compounds

Reference 19

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T13:29:41.909417Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.

Observation 70347402-4e31-446d-a5b3-6eb3e9ab487b · outbound

This paper cites an unresolved cited work.

RF compressibility of topological surface and interface states in metal-hBN-Bi2Se3 capacitors Unresolved cited work

Reference 20

Resolution: unresolved; raw_fallback, observed 2026-08-14T13:29:41.892624Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.

Observation cfdccefd-2cc3-42f8-b337-3e7555ed5f8a · outbound

This paper cites Synthesis and Characterization of Hexagonal Boron Nitride Film as a Dielectric Layer for Graphene Devices.

RF compressibility of topological surface and interface states in metal-hBN-Bi2Se3 capacitors Synthesis and Characterization of Hexagonal Boron Nitride Film as a Dielectric Layer for Graphene Devices

Reference 21

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T13:29:41.876338Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.

Observation c6584be3-18ef-49dd-9bbc-bd2f34771b80 · outbound

This paper cites Boron nitride substrates for high-quality graphene electronics.

RF compressibility of topological surface and interface states in metal-hBN-Bi2Se3 capacitors Boron nitride substrates for high-quality graphene electronics

Reference 22

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T13:29:41.861094Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.

Observation a925e184-c86a-42df-a4c9-46dd4b9dbfcd · outbound

This paper cites Observation of a large-gap topological-insulator class with a single Dirac cone on the surface.

RF compressibility of topological surface and interface states in metal-hBN-Bi2Se3 capacitors Observation of a large-gap topological-insulator class with a single Dirac cone on the surface

Reference 23

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T13:29:41.845679Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.

Observation d242f97d-ff25-45d1-951e-cc6928e159e6 · outbound

This paper cites Bulk Fermi surface coexistence with Dirac surface state in Bi2Se3 : A comparison of photoemission.

RF compressibility of topological surface and interface states in metal-hBN-Bi2Se3 capacitors Bulk Fermi surface coexistence with Dirac surface state in Bi2Se3 : A comparison of photoemission

Reference 24

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T13:29:41.829998Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.

Observation 297bd77e-2e89-47ef-afef-2890c135252b · outbound

This paper cites Interaction phenomena in graphene seen through quantum capacitance.

RF compressibility of topological surface and interface states in metal-hBN-Bi2Se3 capacitors Interaction phenomena in graphene seen through quantum capacitance

Reference 25

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T13:29:41.814338Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.

Observation def01ee9-3727-4cd3-ada2-93e1abac3adf · outbound

This paper cites Surface conduction of topological Dirac electrons in bulk insulating Bi2Se3.

RF compressibility of topological surface and interface states in metal-hBN-Bi2Se3 capacitors Surface conduction of topological Dirac electrons in bulk insulating Bi2Se3

Reference 26

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T13:29:41.799741Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.

Observation b64d3bf2-e19c-4dfe-b29a-db30a4fcb226 · outbound

This paper cites Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi(2)Se(3).

RF compressibility of topological surface and interface states in metal-hBN-Bi2Se3 capacitors Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi(2)Se(3)

Reference 27

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T13:29:41.786000Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.

Observation 0c5f46ec-281e-49ce-8172-f8eb7a17512f · outbound

This paper cites Strong surface scattering in ultrahigh-mobility Bi2Se3 topological insulator crystals.

RF compressibility of topological surface and interface states in metal-hBN-Bi2Se3 capacitors Strong surface scattering in ultrahigh-mobility Bi2Se3 topological insulator crystals

Reference 28

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T13:29:41.770440Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.

Observation 98f72ff6-c833-4d3e-92f9-5bb5dd936cd1 · outbound

This paper cites Optically Active Lattice Vibrations in Bi2Se3.

RF compressibility of topological surface and interface states in metal-hBN-Bi2Se3 capacitors Optically Active Lattice Vibrations in Bi2Se3

Reference 29

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T13:29:41.749312Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.

Observation 425cedea-6959-42c2-858d-c45e3f474d53 · outbound

This paper cites Magneto-Optics of Massive Dirac Fermions in Bulk Bi2Se3.

RF compressibility of topological surface and interface states in metal-hBN-Bi2Se3 capacitors Magneto-Optics of Massive Dirac Fermions in Bulk Bi2Se3

Reference 30

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T13:29:41.733047Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.

Observation eee0be4f-4561-489e-a498-c905d81a068c · outbound

This paper cites Phase Separation of Dirac Electrons in Topological Insulators at the Spatial Limit.

RF compressibility of topological surface and interface states in metal-hBN-Bi2Se3 capacitors Phase Separation of Dirac Electrons in Topological Insulators at the Spatial Limit

Reference 31

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T13:29:41.714389Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.

Observation fa89bc1e-e8e4-4b0f-88d0-7d35e98f3337 · outbound

This paper cites Fermi-level stabilization in the topological insulators Bi2Se3 and Bi2Te3: Origin of the surface electron gas.

RF compressibility of topological surface and interface states in metal-hBN-Bi2Se3 capacitors Fermi-level stabilization in the topological insulators Bi2Se3 and Bi2Te3: Origin of the surface electron gas

Reference 32

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T13:29:41.699288Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.

Observation ea6d8ad4-668a-4712-adb7-eb65fceab8ed · outbound

This paper cites Direct observation of decoupled Dirac states at the interface between topological and normal insulators.

RF compressibility of topological surface and interface states in metal-hBN-Bi2Se3 capacitors Direct observation of decoupled Dirac states at the interface between topological and normal insulators

Reference 33

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T13:29:41.680390Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.

Observation c506e74b-33cf-4c9d-8499-579588ac5f25 · outbound

This paper cites Record Surface State Mobility and Quantum Hall Effect in Topological Insulator Thin Films via Interface Engineering.

RF compressibility of topological surface and interface states in metal-hBN-Bi2Se3 capacitors Record Surface State Mobility and Quantum Hall Effect in Topological Insulator Thin Films via Interface Engineering

Reference 34

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T13:29:41.661952Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.

Observation 031d9e6c-5647-4e6b-a46f-3780af842f0a · outbound

This paper cites Molecular beam epitaxial growth and electronic transport properties of high quality topological insulator Bi 2 Se 3 thin films on hexagonal boron nitride.

RF compressibility of topological surface and interface states in metal-hBN-Bi2Se3 capacitors Molecular beam epitaxial growth and electronic transport properties of high quality topological insulator Bi 2 Se 3 thin films on hexagonal boron nitride

Reference 35

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T13:29:41.644886Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.

Observation c16cffc1-9ac9-4f63-8b67-851b1f873104 · outbound

This paper cites Discovery of a Weyl Fermion semimetal and topological Fermi arcs.

RF compressibility of topological surface and interface states in metal-hBN-Bi2Se3 capacitors Discovery of a Weyl Fermion semimetal and topological Fermi arcs

Reference 36

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T13:29:41.628090Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.

Observation a485b056-b500-42df-9497-213b1bbdf890 · outbound

This paper cites Experimental observation of topological Fermi arcs in type-II Weyl semimetal MoTe2.

RF compressibility of topological surface and interface states in metal-hBN-Bi2Se3 capacitors Experimental observation of topological Fermi arcs in type-II Weyl semimetal MoTe2

Reference 37

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T13:29:41.609584Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.

Pith citing papers

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