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Activation of magnetic moments in CVD-grown graphene by annealing

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arxiv 2107.02824 v2 pith:EV63RGQZ submitted 2021-07-06 cond-mat.mes-hall cond-mat.mtrl-sci

Hyungki Shin , Ebrahim Sajadi , Ali Khademi , Silvia Lüscher , Joshua A. Folk This is my paper · ORCID
classification cond-mat.mes-hallcond-mat.mtrl-sci
keywords annealingdephasinggraphenemagneticmomentsrateaboveactivated
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Effects of annealing on chemical vapor deposited graphene are investigated via a weak localization magnetoresistance measurement. Annealing at \SI{300}{\celsius} in inert gases, a common cleaning procedure for graphene devices, is found to raise the dephasing rate significantly above the rate from electron-electron interactions, which would otherwise be expected to dominate dephasing at 4 K and below. This extra dephasing is apparently induced by local magnetic moments activated by the annealing process, and depends strongly on the backgate voltage applied.

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