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Even-in-magnetic field part of transverse resistivity as a probe of magnetic transitions

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arxiv 2311.14498 v2 pith:VVKKVVYZ submitted 2023-11-24 cond-mat.mes-hall

classification cond-mat.mes-hall
keywords magnetictransverseevenfieldpartresistivityappliedartefacts
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abstract

The component of the resistivity tensor $\rho_{ij}$ corresponding to voltage transverse to both an applied current and a magnetic field can be separated into odd and even parts with respect to the applied magnetic field. The former contains information, for example, about the ordinary or anomalous Hall effect. The latter is often ascribed to experimental artefacts and ignored. Here, we show that upon suppressing these artefacts in carefully controlled experiments, useful information remains. We first investigate the well-explored ferromagnet CoFeB, where the even part of $\rho_{yx}$ contains a contribution from the anisotropic magnetoresistance, which we confirm by Stoner--Wohlfarth modelling. We then apply our approach to magnetotransport measurements of $\rm Mn_5Si_3$ thin films, which undergo a transition from non-collinear to an altermagnetic collinear state. In this material, the even part of the transverse signal is sizable only in the low-spin-symmetry phase below $\approx 80$~K. Transverse resistivity measurements thus offer a simple and readily available probe of magnetic order transitions.

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  1. Magnetic aftereffect and Barkhausen effect in thin films of the altermagnetic candidate Mn5Si3

    cond-mat.mtrl-sci 2025-06 conditional novelty 6.0 of 10

    Time-dependent Hall voltage measurements in Mn5Si3 Hall bars reveal magnetic-viscosity-like relaxation and step-like jumps attributed to Barkhausen reorientations of altermagnetic Hall vector domains.

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