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Phonon-limited valley life times in single-particle bilayer graphene quantum dots
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abstract
The valley degree of freedom in 2D semiconductors, such as gapped bilayer graphene (BLG) and transition metal dichalcogenides, is a promising carrier of quantum information in the emerging field of valleytronics. While valley dynamics have been extensively studied for moderate band gap 2D~semiconductors using optical spectroscopy techniques, very little is known about valley lifetimes in narrow band gap BLG, which is difficult to study using optical techniques. Here, we report single-particle valley relaxation times ($T_1$) exceeding several microseconds in electrostatically defined BLG quantum dots (QDs) using a pulse-gating technique. The observed dependence of $T_1$ on perpendicular magnetic field can be understood qualitatively and quantitatively by a model in which $T_1$ is limited by electron-phonon coupling. We identify the coupling to acoustic phonons via the bond length change and via the deformation potential as the limiting mechanisms.
Forward citations
Cited by 3 Pith papers
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Spin relaxation in a single-electron bilayer graphene quantum dot
Spin relaxation in bilayer graphene quantum dots is predicted to decrease then increase with magnetic field, with phonons and 1/f charge noise controlling opposite field regimes.
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Switching spin filling sequence in a bilayer graphene quantum dot through trigonal warping
Increasing the perpendicular electric field in a bilayer graphene quantum dot switches the lowest shell filling from 4 electrons with a 2+2 spin sequence to 12 electrons with a 6+6 spin sequence, via trigonal warping ...
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The role of antisymmetric orbitals and electron-electron interactions on the two-particle spin and valley blockade in graphene double quantum dots
In bilayer graphene double quantum dots, the strength and magnetic-field dependence of spin and valley blockade are set by the orbital splitting, the short-range electron-electron interaction, and the difference in va...
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