Pith. sign in

REVIEW 3 major objections 7 minor 45 references

Optical response of WSe$_2$-based vertical tunneling junction

T0 review · 3 major / 7 minor · reviewed 2026-08-12 · deepseek-v4-flash

Challenge this review Re-run · record.json Download PDF Read on arXiv ↗ Review JSON

Pith's one-line read A bias voltage sweeps a WSe2 monolayer from n- to p-type doping, switching its emission between negatively and positively charged exciton complexes.

desk verdict A solid, careful device study with standard exciton assignments; the main weaknesses are overstatement of the PL/EL mechanism difference and missing error bars, but it deserves serious review. read the letter →

arxiv 2411.16576 v1 pith:4IKNMLIT submitted 2024-11-25 cond-mat.mtrl-sci cond-mat.mes-hall

K. Walczyk , G. Krasucki , K. Olkowska-Pucko , Z. Chen , T. Taniguchi , K. Watanabe , A. Babiński , M. Koperski
show 2 more authors
M. R. Molas N. Zawadzka
This is my paper · ORCID
classification cond-mat.mtrl-scicond-mat.mes-hall
keywords WSe2monolayerverticaltunnelingjunctionelectroluminescencephotoluminescenceexcitoniccomplexestrionschargeneutralitypoint
verification ladder T0 review T1 audit T2 compute T3 formal

The pith

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The reading

This paper reports that a vertical tunneling junction built around a single WSe2 monolayer can be driven by bias voltage through the whole range of carrier doping: from an n-type regime with excess electrons, through a charge neutrality point, to a p-type regime with excess holes. The voltage-dependent photoluminescence maps out the resulting excitonic complexes, with negatively charged species dominating at negative bias and positively charged species at positive bias. At high bias, electroluminescence appears and is attributed to recombination in a high-carrier-density regime, with spectra broadened partly by current-induced heating. The authors conclude that photoluminescence and electroluminescence excite carriers through different mechanisms, so the two techniques see different emission channels.

What carries the argument

The central object is the vertical tunneling junction itself: a WSe2 monolayer encapsulated between hBN barriers of 7 and 3 layers and sandwiched between two graphene electrodes. Its action is voltage-controlled carrier doping via tunneling through the asymmetric barriers. The identification of each excitonic complex in the bias-dependent PL relies on comparing peak energy positions with spectra of hBN-encapsulated WSe2 monolayers reported in the literature, and the EL interpretation relies on the current-voltage characteristics together with earlier WSe2 tunneling light-emitting devices.

What would settle it

A magneto-optical or polarization-resolved measurement of the same device at fixed bias would settle the assignments: each claimed complex has a characteristic valley Zeeman splitting and circular-polarization selection rule, so an absence of the predicted shifts or selection rules would show that the energy-matching identification is not valid. Alternatively, independently gating the same WSe2 monolayer and comparing the bias-driven PL sequence would test whether the voltage indeed acts as a pure carrier-density knob.

Watch

Extended reading notes

Core claim

The central claim is that in an hBN-encapsulated WSe2 monolayer contacted by graphene electrodes, an applied bias voltage acts as a continuous carrier-density knob: lowering the voltage raises the free-electron concentration and favors negatively charged complexes (negative trions, negative biexciton, dark negative trion, and the debated T−' line), while raising it depletes electrons, crosses the charge neutrality point at about 1.04 V, and then injects holes, producing positive trions and a dark positive trion. The same device emits electroluminescence above roughly ±3.5 V, with asymmetric spectra for the two polarities due to the asymmetric hBN barrier thicknesses (7 layers bottom, 3 layers top). The EL bands at high bias are assigned to many-body recombination of a single charge carrier with a sea of opposite carriers, and their broadening is partly attributed to Joule heating. Because the PL and EL spectra show different complexes, the paper argues that optical and electrical excitation produce different carrier populations and recombination channels.

Load-bearing premise

The entire assignment of emission lines to specific excitonic complexes rests on matching their energy positions to published spectra of other hBN-encapsulated WSe2 monolayers; if strain, the dielectric environment, or the applied field shifts any of these levels in this device, the claimed doping dependence of the complexes would be wrong.

Editorial extensions

If this is right

  • A single WSe2 device can serve as a continuously tunable source of n- and p-type excitonic complexes, with the charge neutrality point located at a known bias of 1.04 V.
  • The presence of both bright and dark charged excitons means voltage-controlled tunneling structures can access recombination channels that are usually dark in photoluminescence.
  • The asymmetric hBN barriers make positive and negative bias regimes behave differently, so engineering barrier thickness could tune the electroluminescence threshold and intensity.
  • At high bias, many-body recombination and Joule heating dominate the electroluminescence, so carrier-density and thermal effects must be separated in any future device analysis.
  • Because photoluminescence and electroluminescence probe different carrier regimes, combined measurements give a more complete picture of excitonic complexes than either technique alone.

Reading between the lines

Editorial extensions of the paper, not claims the author makes directly.

  • If the voltage-doping correspondence is as clean as reported, this geometry could become a gate-free route to map doping-dependent exciton physics in other transition-metal dichalcogenide monolayers.
  • The T−' line, which appears only at high electron density and whose origin is still under debate, could be identified by measuring its valley polarization or magnetic-field splitting in the same device; the paper does not report such a measurement.
  • Extending the bias range or reducing barrier thickness could reveal whether the missing high-bias step in the negative-voltage electroluminescence is truly absent or simply requires larger voltages than used here.
  • The same device could test whether the electroluminescence threshold can be lowered toward the neutral exciton energy by improving contacts, since the paper attributes the high threshold to contact imperfections and the thick bottom hBN barrier.
Share X Bluesky LinkedIn Reddit HN

Signed reviews

No signed human review yet.

Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, and a circularity audit.

Referee Report

3 major / 7 minor

Summary. The paper reports low-temperature (5 K) photoluminescence (PL) and electroluminescence (EL) studies of a WSe2 monolayer embedded in asymmetric hBN tunneling barriers between graphene electrodes. The authors present voltage-dependent PL maps in which they identify ten excitonic complexes, and they infer that the bias voltage tunes both the sign and magnitude of the free-carrier concentration, with a charge neutrality point at 1.04 V. EL is observed for |Vb| > 3.5 V, is attributed to recombination in high-carrier-density regimes, and is argued to arise from excitation mechanisms different from those in PL.

Significance. The device geometry and the voltage-dependent PL/EL data are of interest to the 2D materials and optoelectronics community, and the raw data are made available through a DOI. The observation of bias-tunable emission features and the comparison between PL and EL in the same device are valuable. The manuscript also openly acknowledges the debated nature of the T−′ line and the possibility of sample heating, which is commendable. However, the central claim of carrier-concentration control is inferred entirely from peak assignments that are taken from the literature without independent verification in this device, and the paper does not provide error bars or control experiments. If the assignments are correct, the conclusions are plausible; the lack of independent confirmation is the main weakness.

major comments (3)
  1. [Section 3, first paragraph] The identification of the emission lines (X0, T+, T−T, T−S, D0, D+, D−, XX0, XX−, T−′) is made solely by matching energy positions to literature values, as stated in the first paragraph of Section 3. No polarization-resolved, magneto-optical, or excitation-power-dependent measurements are provided to confirm the assignments. Because the claimed bias-induced change of carrier sign and concentration is inferred entirely from these labels, a shift in any transition energy due to the out-of-plane electric field, the asymmetric dielectric environment (7-layer and 3-layer hBN), or strain could change the interpretation. Please provide additional verification or quantitatively estimate the expected energy shifts in this device.
  2. [Section 3, charge neutrality point] The charge neutrality point is identified at 1.04 V solely from the appearance of the XX0 line in the PL spectrum. If the XX0 label is incorrect (e.g., a phonon replica or a localized state), the claim that the doping changes sign at this voltage is not established. The authors should justify this assignment with independent evidence, such as a transport measurement or a gate-dependent study in the same device.
  3. [Section 3, T−′ line] The T−′ line, which is used to infer large electron densities under negative bias, is stated to be 'still under debate' (Refs. [19,35]). Relying on an unassigned feature as evidence for a high-doping regime is load-bearing for the conclusion of bias-tunable carrier concentration; the authors should either provide a firmer identification (e.g., via magneto-optical measurements) or temper the claim that the electron density is 'large'.
minor comments (7)
  1. [Section 2.1] The phrase 'hexagonal boron nitrade' should be 'hexagonal boron nitride'.
  2. [Figure 4 caption] 'Both restuls are presented' should be 'Both results are presented'.
  3. [Conclusions] 'high career concentration regimes' should be 'high carrier concentration regimes'.
  4. [Reference [38]] The title 'Elektroluminescent devices' should be 'Electroluminescent devices'.
  5. [Reference [33]] The author name 'Kfelina' appears to be a typo; please check the spelling.
  6. [Figure 2 caption] The statement 'The colour scale represents the PL and EL intensity' does not specify whether the scale is linear or logarithmic, nor the units; please clarify.
  7. [Section 3] The peak positions and the charge neutrality point are quoted without error bars; please provide uncertainties for the extracted values.

Circularity Check

0 steps flagged · score 0.0 of 10

No circularity: excitonic peak assignments are literature-benchmarked empirical identifications, not fitted inputs or self-defined predictions.

full rationale

This is an experimental characterization paper with no mathematical derivation chain that reduces to fitted parameters. The central claims—bias-controlled sign and magnitude of free-carrier concentration, identification of excitonic complexes, and the PL versus EL mechanism difference—are read directly from measured spectra. The peak assignments are made "according to the energy positions of excitonic complexes reported in the literature" (Section 3, first paragraph), and although some of those cited works (e.g., Refs. 30 and 41) come from the same research group, they are independent previous measurements rather than definitions adopted within this paper, so their use constitutes external benchmark evidence, not circularity. The manuscript explicitly flags the debated origin of the T−′ line, which is a limitation on the assignment but not a circular step. No equation, parameter, or prediction in the paper is equivalent by construction to its own input; therefore no circular step is identified.

Assumptions & free parameters 0 free parameters · 3 assumptions · 0 invented entities

The paper introduces no invented entities and fits no free parameters. Its claims rest on standard domain assumptions about exciton energy scales and the interpretation of PL changes as doping changes.

assumptions (3)
  • domain assumption The excitonic complexes observed in this WSe2 monolayer have the same energies as those in previously reported hBN-encapsulated WSe2 monolayers.
    All peak assignments in Section 3 are made by comparing to literature energy positions. If strain or dielectric screening shifts the levels in this device, the assignments would change.
  • domain assumption Changes in the PL spectra under bias reflect changes in free carrier concentration rather than electric-field Stark effects or local heating.
    The central claim that bias changes the sign and value of carrier concentrations relies on this interpretation of the PL maps in Section 3 and Figure 2(b).
  • domain assumption The IV curve features can be interpreted as sequential tunneling of electrons and holes into the WSe2 monolayer bands.
    The proposed three-step tunneling scenario in Section 3 is tentative and not derived from a quantitative model.

how reviews work

0 comments
Cite this review

Pith. "Pith review of Optical response of WSe$_2$-based vertical tunneling junction." pith.science (2026). https://pith.science/paper/4IKNMLIT

@misc{pith2026241116576,
  author       = {Pith},
  title        = {Pith review of: Optical response of WSe$_2$-based vertical tunneling junction},
  year         = {2026},
  howpublished = {\url{https://pith.science/paper/4IKNMLIT}},
  note         = {Machine review of arXiv:2411.16576}
}
read the original abstract

Layered materials have attracted significant interest because of their unique properties. Van der Waals heterostructures based on transition-metal dichalcogenides have been extensively studied because of potential optoelectronic applications. We investigate the optical response of a light-emitting tunneling structure based on a WSe\textsubscript{2} monolayer as an active emission material using the photoluminescence (PL) and electroluminescence (EL) experiments performed at low temperature of 5~K. We found that the application of the bias voltage allows us to change both a sign and a value of free carriers concentrations. Consequently, we address the several excitonic complexes emerging in PL spectra under applied bias voltage. The EL signal was also detected and ascribed to the emission in a high-carrier-concentration regime. The results show that the excitation mechanisms in the PL and EL are different, resulting in various emissions in both types of experimental techniques.

Figures

Figures reproduced from arXiv: 2411.16576 by the authors.

Figure 1
Figure 1. Schematic drawing of the investigated heterostructure with the WSe2 ML encapsulated in the hBN flakes and embedded between the graphene (Gr) electrodes. 3.5 4.0 4.5 5.0 (a) (b) (c) 600 1000 2000 4000 6500 −3 −2 −1 0 1 2 3 Voltage (V) 550 1294 2038 2781 3525 4269 5013 5756 6500 T− S T− T XX− D 0 T + X 0 XX 0 T− ' D + D − −5.0 −4.5 −4.0 −3.5 1.64 1.66 1.68 1.70 1.72 1.74 Energy (eV) EL EL PL with applied voltage 600 1… view at source ↗
Figure 2
Figure 2. Voltage-dependent (b) PL and (a, c) EL maps at 5 K. PL measurements were performed with an excitation energy of 2.41 eV and a laser power of ∼ 25 𝜇W. The colour scale represents the PL and EL intensity. Different identified excitonic complexes (X0 , T+ , T− T , T− S , D0 , D+ , D− , XX0 , XX− , T− ′ ) were marked with light blue dashed lines. The vertical white dashed line represents the charge neutrality point. all… view at source ↗
Figure 3
Figure 3. EL and PL spectra of the investigated sample at different voltage values. The spectra are normalized to the maximum intensity and shifted vertically for clarity with some excitonic complexes marked. equal to 7 and 3 layers in the bottom and top barrier, respectively. After transfer, the gold edge contacts to the two graphene electrodes were attached with the aid of the ion-beam lithography technique. 2.2. PL and EL … view at source ↗
Figures from the paper (1 more)
Figure 4
Figure 4. Figure 4: (black curve) The tunneling current-voltage (IV) curve and (green curve) the integrated EL intensity of our device. Both restuls are presented on a logarithmic scale. The IV curve represents data obtained under a laser excitation of 2.41 eV, 𝑖.𝑒. during measurements of…

Discussion (0). Continue with ORCID to comment.

Reference graph

Works this paper leans on

45 extracted references · 38 canonical work pages

  1. [1]

    Excitonic resonances in thin films of wse2: from monolayertobulkmaterial

    Arora, A., Koperski, M., Nogajewski, K., Marcus, J., Faugeras, C., Potemski, M., 2015. Excitonic resonances in thin films of wse2: from monolayertobulkmaterial. Nanoscale7,10421–10429. URL: http://dx.doi.org/10.1039/C5NR01536G,doi: 10.1039/C5NR01536G

    doi:10.1039/c5nr01536g 2015

  2. [2]

    Dark trions govern the temperature-dependent optical absorption and emission of doped atomically thin semiconductors

    Arora, A., Wessling, N.K., Deilmann, T., Reichenauer, T., Steeger, P., Kossacki, P., Potemski, M., Michaelis de Vasconcellos, S., Rohlfing, M., Bratschitsch, R., 2020. Dark trions govern the temperature-dependent optical absorption and emission of doped atomically thin semiconductors. Phys. Rev. B 101, 241413. URL: https://link.aps.org/doi/10.1103/PhysRev...

    work page doi:10.1103/physrevb.101.241413 2020

  3. [3]

    Two dimensional heterostructures for optoelectronics: Current status and future perspective

    Babar, Z.U.D., Raza, A., Cassinese, A., Iannotti, V., 2023. Two dimensional heterostructures for optoelectronics: Current status and future perspective. Molecules 28. URL:https://www.mdpi.com/1420-3049/28/5/2275, doi:10.3390/molecules28052275

    work page doi:10.3390/molecules28052275 2023

  4. [4]

    Charge-tuneable biexciton complexes in monolayer wse2

    Barbone, M., Montblanch, A.R.P., Kara, D.M., Palacios-Berraquero, C., Cadore, A.R., De Fazio, D., Pingault, B., Mostaani, E., Li, H., Chen, B., Watanabe, K., Taniguchi, T., Tongay, S., Wang, G., Ferrari, A.C., Atatüre, M., 2018. Charge-tuneable biexciton complexes in monolayer wse2. Nature Communications 9, 3721. URL: https://doi.org/10.1038/s41467-018-05...

    work page doi:10.1038/s41467-018-05632-4 2018

  5. [5]

    Electron and optical phonon temperatures in electrically biased graphene

    Berciaud, S., Han, M.Y., Mak, K.F., Brus, L.E., Kim, P., Heinz, T.F., 2010. Electron and optical phonon temperatures in electrically biased graphene. Phys. Rev. Lett. 104, 227401

    work page 2010

  6. [6]

    Nano Letters 17, 1425–1430

    Binder, J., Withers, F., Molas, M.R., Faugeras, C., Nogajewski, K., Watanabe, K., Taniguchi, T., Kozikow, A., Geim, A.K., Novoselov, K.S., Potemski,M.,2017.Sub-bandgapvoltageelectroluminescenceandmagneto-oscillationsinawse2light-emittingvanderwaalsheterostructure. Nano Letters 17, 1425–1430

    work page 2017

  7. [7]

    Electron tunneling through ultrathin boron nitride crystalline barriers

    Britnell, L., Gorbachev, R.V., Jalil, R., Belle, B.D., Schedin, F., Katsnelson, M.I., Eaves, L., Morozov, S.V., Mayorov, A.S., Peres, N.M.R., Castro Neto, A.H., Leist, J., Geim, A.K., Ponomarenko, L.A., Novoselov, K.S., 2012. Electron tunneling through ultrathin boron nitride crystalline barriers. Nano Letters 12, 1707–1710

    work page 2012

  8. [8]

    Coulomb-bound four- and five-particle intervalley states in an atomically-thin semiconductor

    Chen, S.Y., Goldstein, T., Taniguchi, T., Watanabe, K., Yan, J., 2018. Coulomb-bound four- and five-particle intervalley states in an atomically-thin semiconductor. Nature Communications 9, 3717. URL:https://doi.org/10.1038/s41467-018-05558-x, doi:10. 1038/s41467-018-05558-x

    doi:10.1038/s41467-018-05558-x 2018

Show all 45 references
  1. [9]

    Charged excitons in monolayerwse2: Experiment and theory

    Courtade, E., Semina, M., Manca, M., Glazov, M.M., Robert, C., Cadiz, F., Wang, G., Taniguchi, T., Watanabe, K., Pierre, M., Escoffier, W., Ivchenko, E.L., Renucci, P., Marie, X., Amand, T., Urbaszek, B., 2017. Charged excitons in monolayerwse2: Experiment and theory. Phys. Re...

    2017 doi

  2. [10]

    Energy dissipation in graphene field-effect transistors

    Freitag, M., Steiner, M., Martin, Y., Perebeinos, V., Chen, Z., Tsang, J.C., Avouris, P., 2009. Energy dissipation in graphene field-effect transistors. Nano Letters 9, 1883–1888

    2009

  3. [11]

    Electroluminescence from pure resonant states in hbn-based vertical tunneling junctions

    Grzeszczyk, M., Vaklinova, K., Watanabe, K., Taniguchi, T., Novoselov, K.S., Koperski, M., 2024. Electroluminescence from pure resonant states in hbn-based vertical tunneling junctions. Light: Science&Applications 13, 155

    2024

  4. [12]

    Valley phonons and exciton complexes in a monolayer semiconductor

    He, M., Rivera, P., Van Tuan, D., Wilson, N.P., Yang, M., Taniguchi, T., Watanabe, K., Yan, J., Mandrus, D.G., Yu, H., Dery, H., Yao, W., Xu, X., 2020. Valley phonons and exciton complexes in a monolayer semiconductor. Nature Communications 11, 618. URL: https://doi.org/10.103...

    2020 doi

  5. [13]

    Electroluminescent vertical tunneling junctions based on wse2 monolayer quantum emitter arrays: Exploring tunability with electric and magnetic fields

    Howarth, J., Vaklinova, K., Grzeszczyk, M., Baldi, G., Hague, L., Potemski, M., Novoselov, K.S., Kozikov, A., Koperski, M., 2024. Electroluminescent vertical tunneling junctions based on wse2 monolayer quantum emitter arrays: Exploring tunability with electric and magnetic fie...

    2024

  6. [14]

    Upconversion of light into bright intravalley excitons via dark intervalley excitons in hbn-encapsulated wse2 mono- layers

    Jadczak, J., Glazov, M., Kutrowska-Girzycka, J., Schindler, J.J., Debus, J., Ho, C.H., Watanabe, K., Taniguchi, T., Bayer, M., Bryja, L., 2021. Upconversion of light into bright intravalley excitons via dark intervalley excitons in hbn-encapsulated wse2 mono- layers. ACS Nano ...

    2021 doi

  7. [15]

    Probing of free and localized excitons and trions in atomically thin wse2, ws2, mose2 and mos2 in photoluminescence and reflectivity experiments

    Jadczak, J., Kutrowska-Girzycka, J., Kapuściński, P., Huang, Y.S., Wójs, A., Bryja, L., 2017. Probing of free and localized excitons and trions in atomically thin wse2, ws2, mose2 and mos2 in photoluminescence and reflectivity experiments. Nanotechnology 28, 395702. URL: https...

    2017 doi

  8. [16]

    Rydbergseriesofdarkexcitonsandtheconductionbandspin-orbitsplittinginmonolayerwse2

    Kapuściński, P., Delhomme, A., Vaclavkova, D., Slobodeniuk, A.O., Grzeszczyk, M., Bartos, M., Watanabe, K., Taniguchi, T., Faugeras, C., Potemski,M.,2021. Rydbergseriesofdarkexcitonsandtheconductionbandspin-orbitsplittinginmonolayerwse2. CommunicationsPhysics 4, 186. URL:https...

    2021 doi

  9. [17]

    Orbital,spin andvalleycontributionstozeemansplitingofexcitonicresonancesinmose 2,wse 2 andws 2 monolayers

    Koperski,M.,Molas,M.R.,Arora,A.,Nogajewski,K.,Bartos,M.,Wyzula,J.,Vaclavkova,D.,Kossacki,P.,Potemski,M.,2019. Orbital,spin andvalleycontributionstozeemansplitingofexcitonicresonancesinmose 2,wse 2 andws 2 monolayers. 2DMater.6,015001. doi: 10.1088/ 2053-1583/aae14b

    2019

  10. [18]

    Opticalpropertiesofatomically thin transition metal dichalcogenides: observations and puzzles

    Koperski,M.,Molas,M.R.,Arora,A.,Nogajewski,K.,Slobodeniuk,A.O.,Faugeras,C.,Potemski,M.,2017. Opticalpropertiesofatomically thin transition metal dichalcogenides: observations and puzzles. Nanophotonics 6, 1289–1308. URL: https://doi.org/10.1515/ nanoph-2016-0165, doi:doi:10.15...

    2017 doi

  11. [19]

    Many-body exciton and inter-valley correlations in heavily electron-dopped wse2 monolayers

    Li, J., Goryca, M., Choi, J., Xu, X., Crooker, S.A., 2021. Many-body exciton and inter-valley correlations in heavily electron-dopped wse2 monolayers. Nano Letters 22, 426–432

    2021

  12. [20]

    Momentum-dark intervalley exciton in monolayer tungsten diselenide brightened via chiral phonon

    Li,Z.,Wang,T.,Jin,C.,Lu,Z.,Lian,Z.,Meng,Y.,Blei,M.,Gao,M.,Taniguchi,T.,Watanabe,K.,Ren,T.,Cao,T.,Tongay,S.,Smirnov,D., Zhang, L., Shi, S.F., 2019a. Momentum-dark intervalley exciton in monolayer tungsten diselenide brightened via chiral phonon. ACS Nano 13, 14107–14113. URL:ht...

    doi

  13. [21]

    Emerging photoluminescence from the dark-exciton phonon replica in monolayer wse2

    Li,Z.,Wang,T.,Jin,C.,Lu,Z.,Lian,Z.,Meng,Y.,Blei,M.,Gao,S.,Taniguchi,T.,Watanabe,K.,Ren,T.,Tongay,S.,Yang,L.,Smirnov,D., Cao, T., Shi, S.F., 2019b. Emerging photoluminescence from the dark-exciton phonon replica in monolayer wse2. Nature Communications 10, 2469. URL:https://doi...

    doi

  14. [22]

    Revealing the biexciton and trion-exciton complexes in bn encapsulated wse2

    Li,Z.,Wang,T.,Lu,Z.,Jin,C.,Chen,Y.,Meng,Y.,Lian,Z.,Taniguchi,T.,Watanabe,K.,Zhang,S.,Smirnov,D.,Shi,S.F.,2018. Revealing the biexciton and trion-exciton complexes in bn encapsulated wse2. Nature Communications 9, 3719. URL:https://doi.org/10.1038/ s41467-018-05863-5, doi:10.10...

    2018 doi

  15. [23]

    Large-area and bright pulsed electroluminescence in monolayer semiconductors

    Lien, D.H., Amani, M., Desai, S.B., Ahn, G.H., Han, K., He, J.H., Agerr III, J.W., Wu, M.C., Javey, A., 2018. Large-area and bright pulsed electroluminescence in monolayer semiconductors. Nature Communications , 1229

    2018

  16. [24]

    Multipathopticalrecombination of intervalley dark excitons and trions in monolayerwse2

    Liu,E.,vanBaren,J.,Liang,C.T.,Taniguchi,T.,Watanabe,K.,Gabor,N.M.,Chang,Y.C.,Lui,C.H.,2020. Multipathopticalrecombination of intervalley dark excitons and trions in monolayerwse2. Phys. Rev. Lett. 124, 196802. URL:https://link.aps.org/doi/10.1103/ PhysRevLett.124.196802, doi:1...

    2020 doi

  17. [25]

    Gate tunable dark trions in monolayer wse2

    Liu, E., van Baren, J., Lu, Z., Altaiary, M.M., Taniguchi, T., Watanabe, K., Smirnov, D., Lui, C.H., 2019a. Gate tunable dark trions in monolayer wse2. Phys. Rev. Lett. 123, 027401. URL: https://link.aps.org/doi/10.1103/PhysRevLett.123.027401, doi:10. 1103/PhysRevLett.123.027401

    doi

  18. [26]

    Valley-selectivechiralphononreplicasofdarkexcitonsand trionsinmonolayer WSe2

    Liu,E.,vanBaren,J.,Taniguchi,T.,Watanabe,K.,Chang,Y.C.,Lui,C.H.,2019b. Valley-selectivechiralphononreplicasofdarkexcitonsand trionsinmonolayer WSe2. Phys.Rev.Research1,032007. URL: https://link.aps.org/doi/10.1103/PhysRevResearch.1.032007, doi:10.1103/PhysRevResearch.1.032007

    doi

  19. [27]

    Magnetic field mixing and splitting of bright and dark excitons in monolayer mose2

    Lu, Z., Rhodes, D., Li, Z., Tuan, D.V., Jiang, Y., Ludwig, J., Jiang, Z., Lian, Z., Shi, S.F., Hone, J., Dery, H., Smirnov, D., 2019. Magnetic field mixing and splitting of bright and dark excitons in monolayer mose2. 2D Mater. 7, 015017. URL:https://dx.doi.org/10.1088/ 2053-1...

    2019 doi

  20. [28]

    Brightening of dark excitons in monolayers of semiconducting transition metal dichalcogenides

    Molas, M.R., Faugeras, C., Slobodeniuk, A.O., Nogajewski, K., Bartos, M., Basko, D.M., Potemski, M., 2017a. Brightening of dark excitons in monolayers of semiconducting transition metal dichalcogenides. 2D Materials 4, 021003. URL:https://dx.doi.org/10.1088/ 2053-1583/aa5521, ...

    doi

  21. [29]

    The optical response of monolayer, few-layer andbulktungstendisulfide

    Molas, M.R., Nogajewski, K., Slobodeniuk, A.O., Binder, J., Bartos, M., Potemski, M., 2017b. The optical response of monolayer, few-layer andbulktungstendisulfide. Nanoscale9,13128–13141. URL: http://dx.doi.org/10.1039/C7NR04672C,doi: 10.1039/C7NR04672C

    doi

  22. [30]

    Probingandmanipulatingvalleycoherenceofdarkexcitonsinmonolayer wse2

    Molas,M.R.,Slobodeniuk,A.O.,Kazimierczuk,T.,Nogajewski,K.,Bartos,M.,Kapuściński,P.,Oreszczuk,K.,Watanabe,K.,Taniguchi,T., Faugeras,C.,Kossacki,P.,Basko,D.M.,Potemski,M.,2019. Probingandmanipulatingvalleycoherenceofdarkexcitonsinmonolayer wse2. Phys.Rev.Lett.123,096803. URL: ht...

    2019 doi

  23. [31]

    Excitonphysicsanddeviceapplicationoftwo-dimensionaltransitionmetaldichalcogenidesemiconductors

    Mueller,T.,Malic,E.,2018. Excitonphysicsanddeviceapplicationoftwo-dimensionaltransitionmetaldichalcogenidesemiconductors. npj 2D Materials and Applications 2, 2397–7132

    2018

  24. [32]

    Spin/valley pumping of resident electrons in wse2 and ws2 monolayers

    Robert, C., Park, S., Cadiz, F., Lombez, L., Ren, L., Tornatzky, H., Rowe, A., Paget, D., Sirotti, F., Yang, M., Van Tuan, D., Taniguchi, T., Urbaszek, B., Watanabe, K., Amand, T., Dery, H., Marie, X., 2021. Spin/valley pumping of resident electrons in wse2 and ws2 monolayers....

    2021 doi

  25. [33]

    Overbiasphotonemissionfrom light-emitting devices based on monolayer transition metal dichalcogenides

    Shan,S.,Huang,J.,Papadopoulos,S.,Kfelina,R.,Taniguchi,T.,Watanabe,K.,Wang,L.,Novotny,L.,2023. Overbiasphotonemissionfrom light-emitting devices based on monolayer transition metal dichalcogenides. Nano Letters 23, 10908–10913

    2023

  26. [34]

    Electroluminescenceinsinglelayermos2

    Sundaram,R.S.,Engel,M.,Lombardo,A.,Krupke,R.,Ferrari,A.C.,Avouris,P.,Steiner,M.,2013. Electroluminescenceinsinglelayermos2. Nano Letters 13, 1416–1431

    2013

  27. [35]

    Marrying excitons and plasmons in monolayer transition-metal dichalcogenides

    Tuan, D.V., Scharf, B., Zutic, I., Dery, H., 2017. Marrying excitons and plasmons in monolayer transition-metal dichalcogenides. Phys. Rev. X 7, 041040

    2017

  28. [36]

    The highly-efficient light-emitting diodes based on transition metal dichalcogenides: From architecture to performance

    Wang, C., Yang, F., Gao, Y., 2020. The highly-efficient light-emitting diodes based on transition metal dichalcogenides: From architecture to performance. Nanoscale Advanced 2, 4323

    2020

  29. [37]

    Wang, G., Robert, C., Glazov, M.M., Cadiz, F., Courtade, E., Amand, T., Lagarde, D., Taniguchi, T., Watanabe, K., Urbaszek, B., Marie, X.,

  30. [38]

    Elektroluminescentdevicesbasedon2dsemiconductingtransitionmetaldichalcogenides

    Wang,J.,Verzhbitskiy,I.,Eda,G.,2018. Elektroluminescentdevicesbasedon2dsemiconductingtransitionmetaldichalcogenides. Advanced Materials , 1802687

    2018

  31. [39]

    Light-emitting diodes by band-structure engineering in van der waals heterostructures

    Withers, F., Del Pozo-Zamudio, O., Mishchenko, A., Rooney, A.P., Gholinia, A., Watanabe, K., Taniguchi, T., Haigh, S.J., Geim, A.K., Tartakovskii, A.I., Novoselov, K.S., 2015a. Light-emitting diodes by band-structure engineering in van der waals heterostructures. Nature Materi...

    doi

  32. [40]

    Wse2 light- emitting tunneling transistors with enhanced brightness at room temperature

    Withers, F., Del Pozo-Zamudio, O., Schwarz, S., Dufferwiel, S., Walker, P.M., Godde, T., Rooney, A.P., Gholinia, A., Woods, C.R., Blake, P., Haigh, S.J., Watanabe, K., Taniguchi, T., Aleiner, I.L., Geim, A.K., Fal’ko, V.I., Tartakovskii, A.I., Novoselov, K.S., 2015b. Wse2 ligh...

    doi

  33. [41]

    TheeffectofdielectricenvironmentonthebrighteningofneutralandchargeddarkexcitonsinWSe2monolayer

    Zinkiewicz, M., Grzeszczyk, M.,Kipczak, L., Kazimierczuk, T., Watanabe, K., Taniguchi,T., Kossacki, P., Babiński, A., Molas, M.R., 2022. TheeffectofdielectricenvironmentonthebrighteningofneutralandchargeddarkexcitonsinWSe2monolayer. AppliedPhysicsLetters120, 163101. URL: https...

    2022 doi

  34. [42]

    Neutralandchargeddarkexcitonsinmonolayer ws2

    Zinkiewicz,M.,Slobodeniuk,A.O.,Kazimierczuk,T.,Kapuściński,P.,Oreszczuk,K.,Grzeszczyk,M.,Bartos,M.,Nogajewski,K.,Watanabe, K.,Taniguchi,T.,Faugeras,C.,Kossacki,P.,Potemski,M.,Babiński,A.,Molas,M.R.,2020. Neutralandchargeddarkexcitonsinmonolayer ws2. Nanoscale 12, 18153–18159. ...

    2020 doi

  35. [43]

    Excitonic complexes in n-doped ws2 monolayer

    Zinkiewicz, M., Woźniak, T., Kazimierczuk, T., Kapuscinski, P., Oreszczuk, K., Grzeszczyk, M., Bartoš, M., Nogajewski, K., Watanabe, K., Taniguchi, T., Faugeras, C., Kossacki, P., Potemski, M., Babiński, A., Molas, M.R., 2021. Excitonic complexes in n-doped ws2 monolayer. Nano...

    2021 doi

  36. [44]

    Ultra-thin van der waals crystals as semiconductor quantum wells

    Zultak, J., Magorrian, S.J., Koperski, M., Garner, A., Hamer, M.J., Tóvári, E., Novoselov, K.S., Zhukov, A.A., Zou, Y., Wilson, N.R., Haigh, S.J., Kretinin, A.V., Fal’ko, V.I., Gorbachev, R., 2020. Ultra-thin van der waals crystals as semiconductor quantum wells. Nature Commun...

    2020

  37. [2017]

    In-plane propagation of light in transition metal dichalcogenide monolayers: Optical selection rules. Phys. Rev. Lett. 119, 047401. URL: https://link.aps.org/doi/10.1103/PhysRevLett.119.047401, doi:10.1103/PhysRevLett.119.047401

    doi

Pith tools

Reviewed August 12, 2026 · model on record in the stance chip above.