Pith. sign in

REVIEW 3 major objections 4 minor 82 references

Growth of hexagonal BN crystals by traveling-solvent floating zone

T0 review · 3 major / 4 minor · reviewed 2026-08-11 · deepseek-v4-flash

Challenge this review Re-run · record.json Download PDF Read on arXiv ↗ Review JSON

Pith's one-line read Traveling-solvent floating zone grows high-quality hexagonal BN crystals.

desk verdict Solid first demonstration of TSFZ growth of h-BN; feasibility holds, but the 'on par with CBF' claim outruns the stacking-fault evidence. read the letter →

arxiv 2412.17195 v2 pith:NRRDEHXD submitted 2024-12-23 cond-mat.mtrl-sci

Eli Zoghlin , Juliette Plo , Gaihua Ye , Cynthia Nnokwe , Reina Gomez , Austin Ferrenti , Satya Kushwaha , Rui He
show 6 more authors
Stephen D. Wilson Pierre Valvin Bernard Gil Guillaume Cassabois James H. Edgar Tyrel M. McQueen
This is my paper · ORCID
classification cond-mat.mtrl-sci PACS 81.10.Fq
keywords hexagonalboronnitridetraveling-solventfloatingzonebulkcrystalgrowthironfluxRamanspectroscopyphotoluminescencequalitytwo-dimensionalmaterials
verification ladder T0 review T1 audit T2 compute T3 formal

The pith

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The reading

The paper reports that hexagonal BN (h-BN) crystals can be grown by traveling-solvent floating zone (TSFZ), a crucible-free directional solidification method. With an iron flux, moderate nitrogen pressure (about 6 bar), and a slow growth rate of 0.1 mm/h, the resulting boules contain grains up to about 1 mm × 2 mm × 0.5 mm whose Raman linewidths match the best crystals made by the established crucible-based flux (CBF) method. The claim matters because CBF growth yields small, thin plates, while TSFZ is a continuous growth route that could in principle produce larger bulk crystals while also benefiting from zone refining of impurities. The paper also reports that the best TSFZ sample shows sharper phonon-assisted free-exciton photoluminescence and less carbon-related defect emission near 3.9–4.1 eV than a natural-isotope CBF comparison crystal.

What carries the argument

The central object is the traveling-solvent floating zone (TSFZ) itself: a molten iron flux is held between a feed rod and a seed rod without a crucible; the feed rod dissolves into the flux, and h-BN recrystallizes onto the seed as the molten zone is slowly translated. This arrangement combines a steep temperature gradient, continuous directional solidification, and zone refining (impurities stay in the liquid rather than entering the recrystallized solid). The paper also relies on the Sieverts'-law relation between nitrogen pressure and nitrogen solubility in the flux, and on the identity of Raman and PL features (the $E_{2g}$ intralayer and interlayer phonon modes, phonon-assisted free excitons, and the 3.9–4.1 eV carbon-defect band) as metrics of crystal quality.

What would settle it

Measure the photoluminescence of a TSFZ-grown h-BN crystal that is never cut or polished, using an as-grown or naturally cleaved surface, and compare the intensity ratio of the stacking-fault emission (5.48 eV) to the phonon-assisted free-exciton emission (5.77 eV); a ratio near 20 rather than the CBF values near 1–2 would show the stacking faults are intrinsic to TSFZ growth.

Watch

Extended reading notes

Core claim

On its own terms, the paper's central claim is that TSFZ is a viable route to high-quality h-BN single crystals. The optimized procedure uses an Fe flux, a polycrystalline h-BN feed, moderate $N_2$ pressure ($P \approx 5$–$7$ bar), and a growth rate of 0.1 mm/h; the grown boules have diameters of 3–5 mm and lengths of 2–10 mm, with the largest crystalline grains reaching roughly 1 mm × 2 mm × 0.5 mm. X-ray diffraction, Raman spectroscopy, and photoluminescence show that the h-BN lattice itself is of high quality: the intralayer $E_{2g}$ mode has an average linewidth of 7.7(2) cm$^{-1}$ at 1365.46(4) cm$^{-1}$ and the interlayer shear mode 1.0(1) cm$^{-1}$ at 51.78(9) cm$^{-1}$, values comparable to CBF-grown crystals, and the PL spectrum has sharp phonon-assisted free-exciton peaks with minimal carbon-defect signal. The paper openly notes that the measured stacking-fault-to-exciton PL ratio (20.9, versus 2.4 and 1.1 for CBF samples) is higher, and that whether this is intrinsic to TSFZ or an artifact of cutting and polishing the samples is not yet settled.

Load-bearing premise

The paper assumes the high stacking-fault photoluminescence of its best sample is caused by cutting and polishing before measurement, not by the TSFZ growth itself; if the stacking faults are intrinsic, the claim that TSFZ matches CBF quality is unsupported.

Editorial extensions

If this is right

  • Because TSFZ is continuous, it offers a path to bulk h-BN crystals larger than the roughly 1 mm by 100-micrometer plates typical of CBF growth.
  • If the polishing explanation for the elevated stacking-fault PL is correct, polished TSFZ crystals would be expected to show CBF-comparable defect signals when measured on as-grown or cleaved surfaces.
  • The lower 4.1 eV carbon-defect emission in the TSFZ sample than in a natural-isotope CBF sample suggests TSFZ's crucible-free geometry and zone refining reduce carbon contamination.
  • Using a boron feed rod in TSFZ demonstrates that nitrogen can be supplied from the gas, which implies isotopic control of the grown h-BN is possible.
  • The finding that Fe flux outperforms Fe-Cr in TSFZ, opposite to the trend in CBF, means flux chemistry interacts with growth geometry and needs separate optimization.

Reading between the lines

Editorial extensions of the paper, not claims the author makes directly.

  • If the stacking-fault excess is indeed polishing-induced, the practical payoff is large: TSFZ may already produce material whose intrinsic defect density matches CBF, and the technique's inherent scalability becomes the main remaining challenge.
  • A direct way to test the paper's open question would be growing at 50 bar with the same 0.1 mm/h rate used at low pressure; the present 50 bar runs were limited to 0.4 mm/h, so pressure and rate effects are conflated.
  • The occasional columnar, c-axis-oriented growth hints that, with the right seeding and interface control, TSFZ could grow thick h-BN ingots with an ideal shape for exfoliation, a form factor CBF cannot deliver.
  • Because TSFZ can use either h-BN or boron feed rods, one could isotopically enrich or dope the feed to engineer the crystal's phonon and thermal properties.
Share X Bluesky LinkedIn Reddit HN

Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, and a circularity audit.

Referee Report

3 major / 4 minor

Summary. The paper reports the first demonstration of hexagonal BN (h-BN) crystal growth by the traveling-solvent floating-zone (TSFZ) method, using Fe or FeCr-based fluxes under N2 pressures of 1–50 bar. Boules 3–5 mm in diameter and 2–10 mm long were grown, with microCT showing grains up to roughly 1 mm × 2 mm × 0.5 mm and variable amounts of trapped flux. For the optimized growth (Fe flux, 5–7 bar, 0.1 mm/h), Raman spectroscopy gives an intralayer E2g linewidth of 7.7(2) cm−1 and an interlayer shear-mode linewidth of 1.0(1) cm−1, comparable to values reported for crucible-based flux (CBF) crystals; photoluminescence shows sharp phonon-assisted free-exciton features and strongly reduced carbon-related emission near 3.9–4.1 eV. The authors conclude that TSFZ is a viable route to larger, high-quality h-BN crystals.

Significance. If the feasibility result holds, this is a meaningful advance for bulk h-BN synthesis: TSFZ is crucible-free, offers zone-refining, and potentially enables larger crystals than the typical millimeter-scale CBF plates. The paper's strengths include the use of complementary characterization (microCT, powder and polished-surface XRD, SEM/EDS, Raman, PL), direct benchmarking against CBF crystals grown at Kansas State rather than only literature values, and unusually candid acknowledgment of unresolved issues, including flux inclusions, the pressure/rate confound, and the stacking-fault question. The central feasibility claim—that TSFZ can grow h-BN grains with Raman linewidths comparable to CBF material—is supported by the data. However, the stronger 'on par with, or superior to CBF' claim in the Conclusions rests on an untested assumption about the origin of the enhanced stacking-fault-related PL, and the evidence base for the optimized-growth comparison is a single boule.

major comments (3)
  1. [§5, Table 1, Fig. 6] The central quality benchmark for the optimized TSFZ material is the PL ratio PL(5.48 eV)/PL(5.77 eV) = 20.9 for sample 1, versus 2.4 and 1.1 for the CBF samples. The manuscript attributes this order-of-magnitude excess to cutting and polishing, citing the unpolished dendritic flake (sample 8, ratio 2.7) and deformation studies [73]. This control is not adequate: sample 8 was grown with a FeB0.2 flux rather than the optimized Fe flux and is a thin flake rather than a sectioned bulk boule, so it does not isolate the effect of polishing from the effect of growth conditions. Because the text itself states that 'the intrinsic stacking fault density characteristic of the TSFZ technique is currently unclear,' the claim in §6 that the optimized procedure yields crystals 'on par with, or superior to' CBF crystals in crystallinity is not yet supported. The authors should either provide a same-sample before/after polishing comparison on the optimized material or explicitly limit the quality claim to the Raman linewidth and carbon-defect PL results.
  2. [§6 Conclusions] The Conclusions state that TSFZ-grown h-BN is 'on par with, or superior to' CBF crystals 'in terms of purity and crystallinity,' but the PL data in §5 show that the TSFZ samples have significantly higher stacking-fault-related emission than the CBF samples, and the Discussion explicitly leaves open whether this is intrinsic. This is in tension with the statement in the same Conclusions that 'the TSFZ samples reported here mostly show higher stacking fault densities than reported CBF samples.' The crystallinity claim should be separated into (i) the intralayer Raman linewidth, which is supported by the data, and (ii) the stacking-fault density, which is unresolved.
  3. [§4 and §5, Table 1] The optimized-growth quality comparison rests on spectroscopy of a single boule (sample 1) for PL, and on a different, unpolished piece of the same boule for Raman. No replicate of the optimized Fe-flux, 5–7 bar, 0.1 mm/h growth is spectroscopically characterized. Given the large run-to-run variation visible in the microCT and Raman data across the other samples, the statement that the 'currently optimized growth procedure produces' crystals of this quality would be materially strengthened by a second optimized-growth sample. I do not consider this a fatal flaw for a feasibility demonstration, but it is part of the evidence needed for the 'on par' claim.
minor comments (4)
  1. [Abstract and Fig. 5a] The abstract and Introduction report the interlayer E2g FWHM as 1.0(1) cm−1, while the Fig. 5a caption reports 1.1(1) cm−1; please reconcile these values.
  2. [§5 Discussion] The sentence 'the intralayer mode is substantially broadened compared to samples 1 and 3' appears to be a typo; sample 3 is the sample with the broadened mode, so the comparison should presumably be to samples 1 and 2.
  3. [§4 Results] The phrase 'The signal corresponding signal in sample3 shows no resolvable peaks' contains a duplicated word.
  4. [Fig. 6b] The comparison in Fig. 6b would benefit from a legend or caption explicitly identifying which CBF sample has natural isotope abundance and which is isotopically enriched, since the text refers to both.

Circularity Check

0 steps flagged · score 0.0 of 10

No significant circularity: the feasibility claim rests on direct measurements, and quality benchmarks are external literature values and directly measured CBF samples, not quantities derived from the paper's own inputs.

full rationale

This is an experimental crystal-growth paper, not a derivation or fitting exercise. The central claim—that h-BN crystals can be grown by the TSFZ technique—is supported by X-ray tomography, XRD, SEM/EDS, Raman, and PL measurements reported directly in the paper, with no fitted parameter that is then renamed as a prediction. The quality benchmark comparison uses external literature values (Raman FWHM 7.6 cm-1 from an APHT Fe-flux CBF sample, 7.3 cm-1 from HPHT CBF, PL ratios 1.1 and 0.9 from literature) as well as CBF samples measured directly in the same study; these are independent evidence rather than outputs of the paper's own model. The one place where the paper makes an interpretive assumption—the high PL(5.48 eV)/PL(5.77 eV) ratio of 20.9 in the polished TSFZ sample—is explicitly flagged as possibly extrinsic, with the authors stating that 'the intrinsic stacking fault density characteristic of the TSFZ technique is currently unclear' and citing an external deformation study (Watanabe et al., ref. [73]) for the physical mechanism. That is an admitted uncertainty about an assumption, not a circular derivation. Self-citations are present (e.g., refs. [53, 54] for the high-pressure floating-zone furnace and ref. [4] for the indirect-gap assignment), but they are methodological or background references and are not load-bearing for the central claim. No equation in the paper reduces to another equation by construction, and no fitted input is relabeled as a prediction. The appropriate finding is no significant circularity.

Assumptions & free parameters 0 free parameters · 3 assumptions · 0 invented entities

No fitted free parameters and no invented entities. The central claim depends on standard domain assumptions about the characterization metrics and the nitrogen-solubility model, all drawn from prior literature. The paper does not derive any quantitative model with adjustable constants.

assumptions (3)
  • domain assumption Raman FWHM of the E2g intralayer mode is a valid transferable metric of h-BN crystallinity.
    Used to benchmark sample1 against CBF literature values in Table 1; assumes linewidths measured on different instruments and sample preparations are directly comparable. Invoked in Section 5 and Table 1.
  • domain assumption PL peaks at 3.9 and 4.1 eV are carbon-related defects, and sharp phonon-assisted free-exciton peaks indicate high purity.
    Used to infer the purity of sample1 relative to CBF samples; the assignment is taken from prior literature (refs 20, 60-64), not established in this paper. See Section 5 and Fig. 6.
  • domain assumption Sieverts' law applies to nitrogen solubility in the Fe flux, so N2 partial pressure controls nitrogen activity.
    Justifies the use of 5-7 bar N2 and the qualitative interpretation of pressure effects; cited to ref 68 in the Discussion.

how reviews work

0 comments
Cite this review

Pith. "Pith review of Growth of hexagonal BN crystals by traveling-solvent floating zone." pith.science (2026). https://pith.science/paper/NRRDEHXD

@misc{pith2026241217195,
  author       = {Pith},
  title        = {Pith review of: Growth of hexagonal BN crystals by traveling-solvent floating zone},
  year         = {2026},
  howpublished = {\url{https://pith.science/paper/NRRDEHXD}},
  note         = {Machine review of arXiv:2412.17195}
}
abstract

Large, high-purity single-crystals of hexagonal BN (h-BN) are essential for exploiting its many desirable and interesting properties. Here, we demonstrate via X-ray tomography, X-ray diffraction and scanning electron microscopy that h-BN crystals can be grown by traveling-solvent floating-zone (TSFZ). The diameters of grown boules range from 3 - 5 mm with lengths from 2 - 10 mm. Tomography indicates variable grain sizes within the boules, with the largest having areas of $\approx$ 1 mm $\times$ 2 mm and thickness $\approx$ 0.5 mm. Although the boules contain macroscale flux inclusions, the h-BN lattice itself is of high quality for samples grown under optimized conditions. The currently optimized growth procedure employs an Fe flux, moderate N$_2$ pressure ($P_{N2} \approx$ 6 bar), and a growth rate of 0.1 mm/h. Raman spectroscopy for an optimized sample gives an average linewidth of 7.7(2) cm$^{-1}$ for the E$_{\mathrm{2g}}$ intralayer mode at 1365.46(4) cm$^{-1}$ and 1.0(1) cm$^{-1}$ for the E$_{\mathrm{2g}}$ interlayer shear mode at 51.78(9) cm$^{-1}$. The corresponding photoluminescence spectrum shows sharp phonon-assisted free exciton peaks and minimal signal in the energy range corresponding to carbon-related defects ($E$ = 3.9 4.1 eV). Our work demonstrates the viability of growing h-BN by the TSFZ technique, thereby opening a new route towards larger, high-quality crystals and advancing the state of h-BN related research.

Figures

Figures reproduced from arXiv: 2412.17195 by the authors.

Figure 1
Figure 1. (Left) Illustration of the growth geometries (TSFZ and LPG) used in this work. v𝑈 and v𝐿 indicate the direction of motion of the top and bottom rods, respectively, while 𝐷𝑈 and𝐷𝐿 indicate the rod diameters. 𝜙 is the adjustable angle of the lasers relative to the translation axis in the PARADIM furnace; in the UCSB furnace 𝜙 = 0°. 𝑃 , 𝑃𝑁2 , and 𝑃𝐴𝑟∶𝐻2 are the total pressure and partial pressures of N2 and the Ar:H2 m… view at source ↗
Figure 2
Figure 2. Optical microscopy images (left) and corresponding microCT data (right) for three representative samples produced in this work. The growth conditions for each sample are provided in the caption. The dashed black arrow on the left shows the growth direction for all samples. The solid black arrows on the microCT images indicate the location of the orthogonal slices shown in [PITH_FULL_IMAGE:figures/full_fig_p006_2.png] view at source ↗
Figure 4
Figure 4. (a) Optical image of a cut and polished section from sample 4, grown by TSFZ using an FeCr flux, 𝑃 = 1 bar, v𝑔𝑟𝑜𝑤 = 0.1 mm/h, h-BN feed, 𝜙 = 0°, and 𝐷𝑈 = 𝐷𝐿 = 6 mm. The microCT image corresponds to a region near to the surface shown in the optical image, though from slightly deeper into the sample volume. (b) EDS spectra collected at the labeled positions in (a). Spot 1 is on the darker matrix and spot 2 is on the c… view at source ↗
Figures from the paper (2 more)
Figure 5
Figure 5. Figure 5: Raman data for three representative TSFZ-grown h-BN samples showing the E2g intralayer (top) and interlayer (bottom) modes. The dashed red line is a fit with a Lorentzian peak on a contstant plus linear background; 𝑥0 is the fitted position of the Lorentzian. The label…
Figure 6
Figure 6. Figure 6: (a) PL spectra collected on three TSFZ-grown samples shown in [PITH_FULL_IMAGE:figures/full_fig_p009_6.png]

Discussion (0). Continue with ORCID to comment.

Reference graph

Works this paper leans on

82 extracted references · 51 canonical work pages

  1. [73]

    Band-edge luminescence of deformed hexagonal boron nitride single crystals

    Watanabe,K.,Taniguchi,T.,Kuroda,T.,Kanda,H.,2006. Band-edge luminescence of deformed hexagonal boron nitride single crystals. Diamond Relat. Mater. 15, 1891–1893. doi:10.1016/j.diamond.2006. 06.014

    work page doi:10.1016/j.diamond.2006 2006

  2. [1]

    Electric field effectinatomicallythincarbonfilms

    Novoselov, K.S., Geim, A.K., Morozov, S.V., Jiang, D., Zhang, Y., Dubonos, S.V., Grigorieva, I.V., Firsov, A.A., 2004. Electric field effectinatomicallythincarbonfilms. Science306,666–669. doi: 10. 1126/science.1102896

    2004

  3. [2]

    Two-dimensional atomic crys- tals

    Novoselov, K.S., Jiang, D., Schedin, F., Booth, T., Khotkevich, V., Morozov, S., Geim, A.K., 2005. Two-dimensional atomic crys- tals. Proc. Natl. Acad. Sci. 102, 10451–10453. doi:10.1073/pnas. 0502848102

    doi:10.1073/pnas 2005

  4. [3]

    Boron nitride substrates for high-quality graphene electronics

    Dean, C.R., Young, A.F., Meric, I., Lee, C., Wang, L., Sorgenfrei, S., Watanabe, K., Taniguchi, T., Kim, P., Shepard, K.L., et al., 2010. Boron nitride substrates for high-quality graphene electronics. Nat. Nanotechnol. 5, 722–726. doi:10.1038/NNANO.2010.172

    doi:10.1038/nnano.2010.172 2010

  5. [4]

    Hexagonal boron nitride is an indirect bandgap semiconductor

    Cassabois, G., Valvin, P., Gil, B., 2016. Hexagonal boron nitride is an indirect bandgap semiconductor. Nat. Photon. 10, 262–266. doi:10.1038/nphoton.2015.277

    doi:10.1038/nphoton.2015.277 2016

  6. [5]

    Modulating the thermal conductivity inhexagonalboronnitrideviacontrolledboronisotopeconcentration

    Yuan, C., Li, J., Lindsay, L., Cherns, D., Pomeroy, J.W., Liu, S., Edgar, J.H., Kuball, M., 2019. Modulating the thermal conductivity inhexagonalboronnitrideviacontrolledboronisotopeconcentration. Commun. Phys. 2, 43. doi:10.1038/s42005-019-0145-5

    doi:10.1038/s42005-019-0145-5 2019

  7. [6]

    Hexagonal boron nitride: a promising substrate for graphene with high heat dissipation

    Zhang, Z., Hu, S., Chen, J., Li, B., 2017. Hexagonal boron nitride: a promising substrate for graphene with high heat dissipation. Nan- otechnology 28, 225704. doi:10.1088/1361-6528/aa6e49

    work page doi:10.1088/1361-6528/aa6e49 2017

  8. [7]

    Ultrathin high- temperature oxidation-resistant coatings of hexagonal boron nitride

    Liu, Z., Gong, Y., Zhou, W., Ma, L., Yu, J., Idrobo, J.C., Jung, J., MacDonald, A.H., Vajtai, R., Lou, J., et al., 2013. Ultrathin high- temperature oxidation-resistant coatings of hexagonal boron nitride. Nat. Commun. 4, 2541. doi:10.1038/ncomms3541

    work page doi:10.1038/ncomms3541 2013

Show all 82 references
  1. [8]

    Šiškins, M., Mullan, C., Son, S.K., Yin, J., Watanabe, K., Taniguchi, T., Ghazaryan, D., Novoselov, K.S., Mishchenko, A.,

  2. [9]

    Signatures oftunablesuperconductivityinatrilayergraphenemoirésuperlattice

    Chen,G.,Sharpe,A.L.,Gallagher,P.,Rosen,I.T.,Fox,E.J.,Jiang,L., Lyu,B.,Li,H.,Watanabe,K.,Taniguchi,T.,etal.,2019a. Signatures oftunablesuperconductivityinatrilayergraphenemoirésuperlattice. Nature 572, 215–219. doi:10.1038/s41586-019-1393-y

    doi

  3. [10]

    Evidence of a gate- tunable Mott insulator in a trilayer graphene moiré superlattice

    Chen,G.,Jiang,L.,Wu,S.,Lyu,B.,Li,H.,Chittari,B.L.,Watanabe, K., Taniguchi, T., Shi, Z., Jung, J., et al., 2019b. Evidence of a gate- tunable Mott insulator in a trilayer graphene moiré superlattice. Nat. Phys. 15, 237–241. doi:10.1038/s41567-018-0387-2

    doi

  4. [11]

    Gate-dependentpseudospin mixing in graphene/boron nitride moiré superlattices

    Shi, Z., Jin, C., Yang, W., Ju, L., Horng, J., Lu, X., Bechtel, H.A., Martin,M.C.,Fu,D.,Wu,J.,etal.,2014. Gate-dependentpseudospin mixing in graphene/boron nitride moiré superlattices. Nat. Phys. 10, 743–747. doi:10.1038/nphys3075

    2014 doi

  5. [12]

    Ponomarenko, L., Gorbachev, R., Yu, G., Elias, D., Jalil, R., Patel, A., Mishchenko, A., Mayorov, A., Woods, C., Wallbank, J., et al.,

  6. [13]

    Boron nitride for excitonics, nanophotonics, and quantum technologies

    Gil,B.,Cassabois,G.,Cusco,R.,Fugallo,G.,Artus,L.,2020. Boron nitride for excitonics, nanophotonics, and quantum technologies. Nanophotonics 9, 3483–3504. doi:10.1515/nanoph-2020-0225

    2020 doi

  7. [14]

    Structure,propertiesandapplicationsoftwo-dimensional hexagonalboronnitride

    Roy,S.,Zhang,X.,Puthirath,A.B.,Meiyazhagan,A.,Bhattacharyya, S., Rahman, M.M., Babu, G., Susarla, S., Saju, S.K., Tran, M.K., etal.,2021. Structure,propertiesandapplicationsoftwo-dimensional hexagonalboronnitride. Adv.Mater.33,2101589. doi: 10.1002/adma. 202101589

    2021 doi

  8. [15]

    Recent development of boron nitride towards electronic applications

    Izyumskaya, N., Demchenko, D.O., Das, S., Özgür, Ü., Avrutin, V., Morkoç, H., 2017. Recent development of boron nitride towards electronic applications. Adv. Electron. Mater. 3, 1600485. doi:10. 1002/aelm.201600485

    2017

  9. [16]

    Quan- tumsensingandimagingwithspindefectsinhexagonalboronnitride

    Vaidya, S., Gao, X., Dikshit, S., Aharonovich, I., Li, T., 2023. Quan- tumsensingandimagingwithspindefectsinhexagonalboronnitride. Adv. Phys.: X 8, 2206049. doi:10.1080/23746149.2023.2206049

    2023

  10. [17]

    Photonics with hexagonal boron nitride

    Caldwell, J.D., Aharonovich, I., Cassabois, G., Edgar, J.H., Gil, B., Basov, D., 2019. Photonics with hexagonal boron nitride. Nat. Rev. Mater. 4, 552–567. doi:10.1038/s41578-019-0124-1

    2019 doi

  11. [18]

    Tunable phonon polaritons in atomically thin Van der Waals crystals of boron nitride

    Dai,S.,Fei,Z.,Ma,Q.,Rodin,A.,Wagner,M.,McLeod,A.,Liu,M., Gannett, W., Regan, W., Watanabe, K., et al., 2014. Tunable phonon polaritons in atomically thin Van der Waals crystals of boron nitride. Science 343, 1125–1129. doi:10.1126/science.1246833

    2014 doi

  12. [19]

    Quantum emission from hexagonal boron nitride monolayers

    Tran, T.T., Bray, K., Ford, M.J., Toth, M., Aharonovich, I., 2016. Quantum emission from hexagonal boron nitride monolayers. Nat. Nanotech. 11, 37–41. doi:10.1038/nnano.2015.242

    2016 doi

  13. [20]

    Bright UV single photon emission at point defects in h-BN

    Bourrellier, R., Meuret, S., Tararan, A., Stéphan, O., Kociak, M., Tizei, L.H., Zobelli, A., 2016. Bright UV single photon emission at point defects in h-BN. Nano Lett. 16, 4317–4321. doi:10.1021/acs. nanolett.6b01368

    2016 doi

  14. [21]

    Fournier,C.,Plaud,A.,Roux,S.,Pierret,A.,Rosticher,M.,Watanabe, K.,Taniguchi,T.,Buil,S.,Quélin,X.,Barjon,J.,etal.,2021.Position- controlled quantum emitters with reproducible emission wavelength in hexagonal boron nitride. Nat. Commun. 12, 3779. doi:10.1038/ s41467-021-24019-6

    2021

  15. [22]

    Single-photon sources

    Lounis, B., Orrit, M., 2005. Single-photon sources. Rep. Prog. Phys. 68, 1129. doi:10.1088/0034-4885/68/5/R04

    2005 doi

  16. [23]

    High-resolution optical imaging and sensing using quantumemittersinhexagonalboron-nitride

    Bradac, C., 2021. High-resolution optical imaging and sensing using quantumemittersinhexagonalboron-nitride. Front.Phys.9,641341. doi:10.3389/fphy.2021.641341

    2021

  17. [24]

    Strain quantum sensing with spin defects in hexagonal boron nitride

    Lyu, X., Tan, Q., Wu, L., Zhang, C., Zhang, Z., Mu, Z., Zúñiga- Pérez, J., Cai, H., Gao, W., 2022. Strain quantum sensing with spin defects in hexagonal boron nitride. Nano Lett. 22, 6553–6559. doi:10.1021/acs.nanolett.2c01722

    2022 doi

  18. [25]

    A planar defect spin sensorinatwo-dimensionalmaterialsusceptibletostrainandelectric fields

    Udvarhelyi, P., Clua-Provost, T., Durand, A., Li, J., Edgar, J.H., Gil, B., Cassabois, G., Jacques, V., Gali, A., 2023. A planar defect spin sensorinatwo-dimensionalmaterialsusceptibletostrainandelectric fields. npj Comput. Mater. 9, 150. doi:10.1038/s41524-023-01111-7

    2023 doi

  19. [26]

    Dahal, R., Li, J., Majety, S., Pantha, B.N., Cao, X., Lin, J., Jiang, H.,

  20. [27]

    Epitaxial single- crystal hexagonal boron nitride multilayers on Ni (111)

    Ma,K.Y.,Zhang,L.,Jin,S.,Wang,Y.,Yoon,S.I.,Hwang,H.,Oh,J., Jeong, D.S., Wang, M., Chatterjee, S., et al., 2022. Epitaxial single- crystal hexagonal boron nitride multilayers on Ni (111). Nature 606, 88–93. doi:10.1038/s41586-022-04745-7. : Preprint submitted to Elsevier Page 12 of 14

    2022 doi

  21. [28]

    Ultraflat single- crystal hexagonal boron nitride for wafer-scale integration of a 2D- compatible high-𝜅 metal gate

    Wang, Y., Zhao, C., Gao, X., Zheng, L., Qian, J., Gao, X., Li, J., Tang, J., Tan, C., Wang, J., et al., 2024. Ultraflat single- crystal hexagonal boron nitride for wafer-scale integration of a 2D- compatible high-𝜅 metal gate. Nat. Mater. 23, 1495–1501. doi:10. 1038/s41563-024-01968-z

    2024

  22. [29]

    Wafer- scalesingle-crystalhexagonalboronnitridemonolayersonCu(111)

    Chen, T.A., Chuu, C.P., Tseng, C.C., Wen, C.K., Wong, H.S.P., Pan, S., Li, R., Chao, T.A., Chueh, W.C., Zhang, Y., et al., 2020. Wafer- scalesingle-crystalhexagonalboronnitridemonolayersonCu(111). Nature 579, 219–223. doi:10.1038/s41586-020-2009-2

    2020 doi

  23. [30]

    Large-area synthesis and transfer of multilayer hexagonal boron nitride for enhanced graphene device arrays

    Fukamachi,S.,Solís-Fernández,P.,Kawahara,K.,Tanaka,D.,Otake, T., Lin, Y.C., Suenaga, K., Ago, H., 2023. Large-area synthesis and transfer of multilayer hexagonal boron nitride for enhanced graphene device arrays. Nat. Electron. 6, 126–136. doi: 10.1038/ s41928-022-00911-x

    2023

  24. [31]

    Rhombohedral and turbostratic boron nitride: X-ray diffraction and photoluminescencesignatures.Appl.Phys.Lett.119,262102.doi: 10

    Moret, M., Rousseau, A., Valvin, P., Sharma, S., Souqui, L., Peder- sen, H., Högberg, H., Cassabois, G., Li, J., Edgar, J., et al., 2021. Rhombohedral and turbostratic boron nitride: X-ray diffraction and photoluminescencesignatures.Appl.Phys.Lett.119,262102.doi: 10. 1063/5.0076424

    2021

  25. [32]

    Page,R.,Casamento,J.,Cho,Y.,Rouvimov,S.,Xing,H.G.,Jena,D.,

  26. [33]

    Tsai,C.,Kobayashi,Y.,Akasaka,T.,Kasu,M.,2009.Molecularbeam epitaxial growth of hexagonal boron nitride on Ni (111) substrate. J. Cryst.Growth311,3054–3057. doi: 10.1016/j.jcrysgro.2009.01.077

    2009 doi

  27. [34]

    Vuong, T., Cassabois, G., Valvin, P., Rousseau, E., Summerfield, A., Mellor, C., Cho, Y., Cheng, T., Albar, J.D., Eaves, L., et al.,

  28. [35]

    High-temperature molecular beam epitaxy of hexagonal boron nitride with high active nitrogen fluxes

    Cheng,T.S.,Summerfield,A.,Mellor,C.J.,Khlobystov,A.N.,Eaves, L., Foxon, C.T., Beton, P.H., Novikov, S.V., 2018. High-temperature molecular beam epitaxy of hexagonal boron nitride with high active nitrogen fluxes. Materials 11, 1119. doi:10.3390/ma11071119

    2018 doi

  29. [36]

    Rotationally aligned hexagonal boron nitride on sapphire by high-temperature molecular beam epitaxy. Phys. Rev. Materials 3, 064001. doi:10.1103/PhysRevMaterials.3.064001

    doi

  30. [37]

    Alemoush, Z., Tingsuwatit, A., Maity, A., Li, J., Lin, J., Jiang, H.,

  31. [38]

    Synthesis of high-purity boron nitride single crystals under high pressure by using Ba–BN solvent

    Taniguchi, T., Watanabe, K., 2007. Synthesis of high-purity boron nitride single crystals under high pressure by using Ba–BN solvent. J. Cryst. Growth 303, 525–529. doi:10.1016/j.jcrysgro.2006.12.061

    2007 doi

  32. [39]

    Hexagonal boron nitride single crystal growth at atmospheric pressure using Ni- Cr solvent

    Kubota,Y.,Watanabe,K.,Tsuda,O.,Taniguchi,T.,2008. Hexagonal boron nitride single crystal growth at atmospheric pressure using Ni- Cr solvent. Chem. Mater. 20, 1661–1663. doi:10.1021/cm7028382

    2008 doi

  33. [40]

    Liu, S., He, R., Ye, Z., Du, X., Lin, J., Jiang, H., Liu, B., Edgar, J.H.,

  34. [41]

    Effect of growth temperature on the structural and optical properties of few-layer hexagonal boron nitride by molecular beam epitaxy

    Laleyan, D.A., Mengle, K., Zhao, S., Wang, Y., Kioupakis, E., Mi, Z., 2018. Effect of growth temperature on the structural and optical properties of few-layer hexagonal boron nitride by molecular beam epitaxy. Opt. Express 26, 23031–23039. doi:10.1364/OE.26.023031

    2018 doi

  35. [42]

    Zhang,S.Y.,Xu,K.,Zhao,X.K.,Shao,Z.Y.,Wan,N.,2019.Improved hBN single-crystal growth by adding carbon in the metal flux. Cryst. Growth Des. 19, 6252–6257. doi:10.1021/acs.cgd.9b00712

    2019 doi

  36. [43]

    Hexagonal boron nitride single crystal growth from solution with a temperature gradient

    Li, J., Yuan, C., Elias, C., Wang, J., Zhang, X., Ye, G., Huang, C., Kuball, M., Eda, G., Redwing, J.M., et al., 2020a. Hexagonal boron nitride single crystal growth from solution with a temperature gradient. Chem. Mater. 32, 5066–5072. doi:10.1021/acs.chemmater. 0c00830

    doi

  37. [44]

    Single crystal growth of monoisotopic hexagonal boron nitride from a Fe–Cr flux

    Li, J., Elias, C., Ye, G., Evans, D., Liu, S., He, R., Cassabois, G., Gil, B., Valvin, P., Liu, B., et al., 2020b. Single crystal growth of monoisotopic hexagonal boron nitride from a Fe–Cr flux. J. Mater. Chem. C 8, 9931–9935. doi:10.1039/D0TC02143A

    doi

  38. [45]

    Hexagonal boron nitridecrystalgrowthfromiron,asinglecomponentflux

    Li, J., Wang, J., Zhang, X., Elias, C., Ye, G., Evans, D., Eda, G., Redwing, J.M., Cassabois, G., Gil, B., et al., 2021. Hexagonal boron nitridecrystalgrowthfromiron,asinglecomponentflux. ACSNano 15, 7032–7039. doi:10.1021/acsnano.1c00115

    2021 doi

  39. [46]

    In- fraredhyperbolicmetasurfacebasedonnanostructuredVanderWaals materials

    Li,P.,Dolado,I.,Alfaro-Mozaz,F.J.,Casanova,F.,Hueso,L.E.,Liu, S., Edgar, J.H., Nikitin, A.Y., Vélez, S., Hillenbrand, R., 2018. In- fraredhyperbolicmetasurfacebasedonnanostructuredVanderWaals materials. Science 359, 892–896. doi:10.1126/science.aaq1704

    2018 doi

  40. [47]

    Large-scale growth of high-quality hexagonal boron nitride crystals at atmospheric pressure from an Fe–Cr flux. Cryst. Growth Des. 17, 4932–4935. doi:10.1021/acs.cgd.7b00871

    doi

  41. [48]

    Liu,S.,He,R.,Xue,L.,Li,J.,Liu,B.,Edgar,J.H.,2018.Singlecrystal growth of millimeter-sized monoisotopic hexagonal boron nitride. Chem. Mater. 30, 6222–6225. doi:10.1021/acs.chemmater.8b02589

    2018 doi

  42. [49]

    Fault-tolerant quantum computation by anyons

    Kitaev, A., 2003. Fault-tolerant quantum computation by anyons. Ann. Phys. 303, 2–30. doi:10.1016/S0003-4916(02)00018-0

    2003 doi

  43. [50]

    Disorder in Van der Waals heterostructures of 2D materials

    Rhodes, D., Chae, S.H., Ribeiro-Palau, R., Hone, J., 2019. Disorder in Van der Waals heterostructures of 2D materials. Nat. Mater. 18, 541–549. doi:10.1038/s41563-019-0366-8

    2019 doi

  44. [51]

    Hexagonal boron nitride synthe- sized at atmospheric pressure using metal alloy solvents: evaluation asasubstratefor2Dmaterials

    Onodera, M., Taniguchi, T., Watanabe, K., Isayama, M., Masubuchi, S., Moriya, R., Machida, T., 2019. Hexagonal boron nitride synthe- sized at atmospheric pressure using metal alloy solvents: evaluation asasubstratefor2Dmaterials. NanoLett.20,735–740. doi: 10.1021/ acs.nanolett.9b04641

    2019

  45. [52]

    Techniques of zone melting and crystal growing

    Pfann, W., 1957. Techniques of zone melting and crystal growing. Solid State Phys. 4, 423–521. doi:10.1016/S0081-1947(08)60158-7

    1957 doi

  46. [53]

    High- pressure laser floating zone furnace

    Schmehr, J.L., Aling, M., Zoghlin, E., Wilson, S.D., 2019. High- pressure laser floating zone furnace. Rev. Sci. Instrum. 90. doi:10. 1063/1.5085327

    2019

  47. [54]

    Ultralow-losspolaritonsinisotopicallypureboronnitride.Nat.Mater

    Giles, A.J., Dai, S., Vurgaftman, I., Hoffman, T., Liu, S., Lindsay, L., Ellis, C.T., Assefa, N., Chatzakis, I., Reinecke, T.L., et al., 2018. Ultralow-losspolaritonsinisotopicallypureboronnitride.Nat.Mater. 17, 134–139. doi:10.1038/nmat5047

    2018 doi

  48. [55]

    Anyons in an exactly solved model and beyond

    Kitaev, A., 2006. Anyons in an exactly solved model and beyond. Ann. Phys. 321, 2–111. doi:10.1016/j.aop.2005.10.005

    2006 doi

  49. [56]

    Laser-heated pedestal growth of oxide fibers

    Andreeta, M.R., Hernandes, A.C., 2010. Laser-heated pedestal growth of oxide fibers. Springer, Berlin, Heidelberg. pp. 393–432. doi:10.1007/978-3-540-74761-1_13

    2010 doi

  50. [57]

    Iron—Binary phase diagrams

    Kubaschewski, O., 2013. Iron—Binary phase diagrams. Springer Science & Business Media

    2013

  51. [58]

    NRecon Reconstruction Soft- ware

    MicroPhotonics, 2020. NRecon Reconstruction Soft- ware. https://www.microphotonics.com/micro-ct-systems/ nrecon-reconstruction-software/. Accessed: 2024-10-29

    2020

  52. [59]

    Geick,R.,Perry,C.,Rupprecht,G.,1966.Normalmodesinhexagonal boron nitride. Phys. Rev. 146, 543. doi:10.1103/PhysRev.146.543

    1966 doi

  53. [60]

    Defect-related photo- luminescence of hexagonal boron nitride

    Museur, L., Feldbach, E., Kanaev, A., 2008. Defect-related photo- luminescence of hexagonal boron nitride. Phys. Rev. B 78, 155204. doi:10.1103/PhysRevB.78.155204

    2008 doi

  54. [61]

    Advances in high-pressure laser floating zone growth: The Laser Optical Kristallmacher II (LOKII)

    GomezAlvarado,S.J.,Zoghlin,E.,Jackson,A.,Kautzsch,L.,Plumb, J., Aling, M., Capa Salinas, A.N., Pokharel, G., Pang, Y., Gomez, R.M., et al., 2024. Advances in high-pressure laser floating zone growth: The Laser Optical Kristallmacher II (LOKII). Rev. Sci. Instrum. 95. doi:10.10...

    2024 doi

  55. [62]

    Feigelson, R., 1985. The laser-heated pedestal growth method: a powerful tool in the search for new high performance laser crystals, in: Tunable Solid State Lasers: Proceedings of the First International ConferenceLaJolla,Calif.,June13–15,1984,Springer.pp.129–142. doi:10.1007/...

    1985 doi

  56. [63]

    Point defects in hexagonalboronnitride.I.EPR,thermoluminescence,andthermally- stimulated-current measurements

    Katzir, A., Suss, J., Zunger, A., Halperin, A., 1975. Point defects in hexagonalboronnitride.I.EPR,thermoluminescence,andthermally- stimulated-current measurements. Phys. Rev. B 11, 2370. doi:10. 1103/PhysRevB.11.2370

    1975

  57. [64]

    arXiv preprint arXiv:2405.20837 doi:10.48550/arXiv.2405.20837

    Plo,J.,Pershin,A.,Li,S.,Poirier,T.,Janzen,E.,Schutte,H.,Tian,M., Wynn,M.,Bernard,S.,Rousseau,A.,etal.,2024.Isotopesubstitution and polytype control for point defects identification: the case of the ultraviolet color center in hexagonal boron nitride. arXiv preprint arXiv:2405....

    2024 doi arXiv

  58. [65]

    Phase diagrams of ternary iron alloys

    Raghavan, V., 1987. Phase diagrams of ternary iron alloys. ASM International

    1987

  59. [66]

    Reviewofthermodynamicproperties of the Cr-N system

    DeLuca,J.,Leitnaker,J.,1973. Reviewofthermodynamicproperties of the Cr-N system. J. Am. Chem. Soc. 56, 126–129. doi:10.1111/j. 1151-2916.1973.tb15426.x

    1973

  60. [67]

    AthermodynamicevaluationoftheCr-Fe-Nsystem

    Frisk,K.,1990. AthermodynamicevaluationoftheCr-Fe-Nsystem. Metall. Trans. A 21, 2477–2488. doi:10.1007/BF02646992

    1990 doi

  61. [68]

    Near band-gap photoluminescence properties of hexagonal boron nitride

    Museur, L., Kanaev, A., 2008. Near band-gap photoluminescence properties of hexagonal boron nitride. J. Appl. Phys. 103, 103520. doi:10.1063/1.2925685

    2008 doi

  62. [69]

    Electronspinresonanceincarbon-doped boron nitride

    Moore,A.,Singer,L.,1972. Electronspinresonanceincarbon-doped boron nitride. J. Phys. Chem. Solids 33, 343–356. doi: 10.1016/ 0022-3697(72)90016-9

    1972

  63. [70]

    Compound Semiconductor 30, 46–50

    Sadovyi,B.,Sadovyi,P.,Porowski,S.,Grzegory,I.,2024b.Producing high-quality hexagonal BN. Compound Semiconductor 30, 46–50

  64. [71]

    OptimizationofNi–Crfluxgrowthforhexagonalboronnitridesingle crystals

    Hoffman, T.B., Clubine, B., Zhang, Y., Snow, K., Edgar, J.H., 2014. OptimizationofNi–Crfluxgrowthforhexagonalboronnitridesingle crystals. J. Cryst. Growth 393, 114–118. doi:10.1016/j.jcrysgro. 2013.09.030

    2014 doi

  65. [72]

    Isotopeengineering ofVanderWaalsinteractionsinhexagonalboronnitride

    Vuong, T., Liu, S., Van der Lee, A., Cuscó, R., Artús, L., Michel, T., Valvin,P.,Edgar,J.,Cassabois,G.,Gil,B.,2018. Isotopeengineering ofVanderWaalsinteractionsinhexagonalboronnitride. Nat.Mater. 17, 152–158. doi:10.1038/nmat5048

    2018 doi

  66. [74]

    Characterization methods dedicated to nanometer-thick hBN layers

    Schué, L., Stenger, I., Fossard, F., Loiseau, A., Barjon, J., 2016. Characterization methods dedicated to nanometer-thick hBN layers. 2D Materials 4, 015028

    2016

  67. [75]

    Absorption of gases by metals

    Sieverts, A., 1929. Absorption of gases by metals. Zeitschrift für Metallkunde 21, 37–46

    1929

  68. [76]

    Comparative evaluation of h-BN crystals properties grown under high N2 pressure with pure Ni and Ni–Crsolventsviathermalgradienttechnique

    Sadovyi, P., Nikolenko, B., Strelchuk, V., Turko, B., Petrusha, I., Porowski, S., Grzegory, I., 2024a. Comparative evaluation of h-BN crystals properties grown under high N2 pressure with pure Ni and Ni–Crsolventsviathermalgradienttechnique. E-MRSFallMeeting, Symposium P: Boro...

  69. [82]

    Watanabe,K.,Taniguchi,T.,2009.Jahn-Tellereffectonexcitonstates in hexagonal boron nitride single crystal. Phys. Rev. B 79, 193104. : Preprint submitted to Elsevier Page 14 of 14

    2009

  70. [2011]

    Epitaxially grown semiconducting hexagonal boron nitride as a deep ultraviolet photonic material. Appl. Phys. Lett. 98, 211110. doi:10.1063/1.3593958

    doi

  71. [2013]

    Nature 497, 594–597

    Cloning of Dirac fermions in graphene superlattices. Nature 497, 594–597. doi:10.1038/nature12187

    doi

  72. [2017]

    2D Mater

    Deep ultraviolet emission in hexagonal boron nitride grown by high-temperature molecular beam epitaxy. 2D Mater. 4, 021023. doi:10.1088/2053-1583/aa604a

    doi

  73. [2019]

    High-temperature electronic devices enabled by hBN- encapsulated graphene. Appl. Phys. Lett. 114, 123104. doi:10.1063/ 1.5088587

  74. [2024]

    Status of h-BN quasi-bulk crystals and high efficiency neutron detectors. J. Appl. Phys. 135, 175704. doi:10.1063/5.0179610

    doi

Pith tools

Reviewed August 11, 2026 · model on record in the stance chip above.