Selective Fabrication of Monolayer 1H- and 1T'-WTe2

Katsuaki Sugawara; Ryuichi Ando; Takafumi Sato; Takashi Takahashi; Tappei Kawakami

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Selective Fabrication of Monolayer 1H- and 1T'-WTe2

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arxiv 2501.17527 v1 pith:EG4JFVPY submitted 2025-01-29 cond-mat.mes-hall cond-mat.mtrl-sci

Ryuichi Ando , Katsuaki Sugawara , Tappei Kawakami , Takashi Takahashi , Takafumi Sato This is my paper · ORCID

classification cond-mat.mes-hallcond-mat.mtrl-sci

keywords wte2bandphaseangle-resolvedband-structurecalculationscharactercombined

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We selectively fabricated monolayers of octahedral (1H) and distorted trigonal (1T') WTe2 on graphene/SiC(0001) by controlling the substrate temperature during epitaxy. Angle-resolved photoemission spectroscopy, combined with first-principles band-structure calculations, has revealed several drastic differences between these two polymorphs. The 1T' phase exhibits a semiconducting character with a nearly-zero energy gap, while the 1H phase shows a large band gap and the band splitting at the K/K' point. The present results pave a pathway toward developing nanoelectronic devices based with WTe2.

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