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Tunneling magnetoresistance in altermagnetic RuO$_2$-based magnetic tunnel junctions
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abstract
Altermagnets exhibit characteristics akin to antiferromagnets, with spin-split anisotropic bands in momentum space. RuO$_2$ has been considered as a prototype altermagnet; however, recent reports have questioned altermagnetic ground state in this material. In this study, we provide direct experimental evidence of altermagnetic characteristics in RuO$_2$ films by demonstrating spin-dependent tunneling magnetoresistance (TMR) in RuO$_2$-based magnetic tunnel junctions. Our results show the spin-splitted anisotropic band structure of RuO$_2$, with the observed TMR determined by the direction of the N\'eel vector of RuO$_2$. These results reflect the altermagnetic nature of RuO$_2$ and highlight its potential for spintronic applications, leveraging the combined strengths of ferromagnetic and antiferromagnetic systems.
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Cited by 1 Pith paper
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G-type Antiferromagnetic BiFeO$_3$ is a Multiferroic $g$-wave Altermagnet
G-type antiferromagnetic BiFeO3 is classified as a bulk g-wave altermagnet with spin splitting up to about 0.2 eV, using a completed group-theory table for (d,g,i)-wave altermagnets.
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