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Unraveling Enhanced Superconductivity in Single-layer FeSe through Substrate Surface Terminations
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Single-layer FeSe films grown on (001) SrTiO3 substrates have shown a significant increase in superconducting transition temperature compared to bulk FeSe. Several mechanisms have been proposed to explain such enhancement, including electron doping, interfacial electron-phonon coupling, and strong electron correlations. To pinpoint the primary driver, we grew FeSe films on SrTiO3 substrates with coexisting TiO2 and SrO surface terminations. Scanning tunneling spectroscopy revealed a larger superconducting gap of 17 meV for FeSe on TiO2 compared to 11 meV on SrO. Tunneling spectroscopy also showed a larger work function on SrO, leading to reduced charge transfer, as confirmed by angle-resolved photoemission spectroscopy. Scanning transmission electron microscopy revealed distinctive interfacial atomic-scale structures, with the Se-Fe-Se tetrahedral angle changing from 109.9{\deg} on SrO to 105.1{\deg} on TiO2. Compared to dynamical mean field theory calculations, these results suggest optimal electron correlations in FeSe/TiO2 for enhancing high-temperature superconductivity.
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Cited by 1 Pith paper
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Correlation Enhanced Electron-Phonon Coupling in FeSe/SrTiO$_3$ at a Magic Angle
The superconducting gap in FeSe/STO films peaks at a magic tetrahedral angle near 107 degrees, where correlation-enhanced A1g electron-phonon coupling is also strongest.
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