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Synchrotron light source focused X-ray detection with LGADs, AC-LGADs and TI-LGADs

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arxiv 2504.18638 v3 pith:N3RJXZJW submitted 2025-04-25 physics.ins-det hep-ex

A. Molnar , Y. Zhao , S.M. Mazza , G. Oregan , M. Davis , S. Beringer , A. Tiernan , J. Ott
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H.F.-W. Sadrozinski A. Seiden B. Schumm F. McKinney-Martinez A. Bisht M. Centis-Vignali G. Paternoster M. Boscardin
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classification physics.ins-dethep-ex
keywords wereenergygainlgadsac-lgadsfastresolutionresponse
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abstract

The response of Low Gain Avalanche Diodes (LGADs), a type of thin silicon detector with internal gain, to X-rays of energies between 6-16~keV was characterized at the Stanford Synchrotron Radiation Lightsource (SSRL). The utilized beamline at SSRL was 7-2, with a nominal beam size of 30~$\mu$m, repetition rate of 500~MHz, and with an energy dispersion $\Delta E/E$ of $10^{-4}$. Multi-channel LGADs, AC-LGADs, and TI-LGADs of different thicknesses and gain layer configurations from Hamamatsu Photonics (HPK) and Fondazione Bruno Kessler (FBK) were tested. The sensors were read out with a discrete component board and digitized with a fast oscilloscope or a CAEN fast digitizer. The devices' energy response, energy resolution, and time resolution were measured as a function of X-ray energy and position. The charge collection and multiplication mechanism were simulated using TCAD Sentaurus, and the results were compared with the collected data.

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  1. Measured gain suppression in FBK LGADs with different active thicknesses

    physics.ins-det 2025-02 conditional novelty 5.0 of 10

    Gain suppression in FBK LGADs depends on detector thickness, proton energy, bias voltage, and angle, and is stronger for FBK than for previously measured HPK sensors.

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