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Paper Citation Record · LEDGER

First-principles Quantum Insights into Bandgap Engineering, Valley Quantum Hall Effect, and Nonlinear Optical Response of Ge-Doped Graphene for Potential Optoelectronic Applications

As of 19 August 2026, this Paper Citation Record lists 29 of 29 outbound references and 1 inbound Pith citation observation for arXiv:2506.07745.

A citation records a reference. It does not transfer a finding from one paper to another.

pith.paper-citation-record.v1
2506.07745 v2

Coverage vector

measured 29 of 29 reference resolution

Typed states for the displayed outbound observations.

Source: paper_references, paper_reference_links, observed 2026-08-07T05:32:35.581055Z

measured 30 of 30 standing notices

One-hop event checks from named stored sources.

Source: scholarly_work_events, retraction_status_cache, observed 2026-08-19T06:32:44.657259+00:00

measured 1 of 1 inbound itemization

Pith citing papers itemized under the disclosed page cap.

Source: paper_references, paper_reference_links, observed 2026-08-03T19:22:31.507261Z

measured 0 of 1 external citation measurements

A source-named dated measurement, never combined with another source.

Source: cited_works

Reference resolution

29 of 29 outbound references displayed

  • verified exact0
  • verified fuzzy25
  • unresolved4
  • parse uncertain0
  • malformed identifier0
  • metadata mismatch0

External citation measurements

No source-named external measurement is stored.

Outbound references

Reference 1

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Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-19T06:32:44.657259+00:00.

source=pdf_text observed=2026-08-07T05:32:35.501415Z digest=sha256:49a74eea6ccffc412e1987bc0975e8e1496e6861a90af261749ef353e03ed3d1

Observation 2bc36347-7099-4863-947b-a7c73232e635 · outbound

This paper cites What are the key degrees of freedom for the next generation of quantum functional materials? Next Materials 1, 100018 (2023) 1-12.

First-principles Quantum Insights into Bandgap Engineering, Valley Quantum Hall Effect, and Nonlinear Optical Response of Ge-Doped Graphene for Potential Optoelectronic Applications What are the key degrees of freedom for the next generation of quantum functional materials? Next Materials 1, 100018 (2023) 1-12

Reference 2

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No event found in the named queried sources as of 2026-08-19T06:32:44.657259+00:00.

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Observation 37d55533-3a7f-4314-b2cb-58b42ecf43e4 · outbound

This paper cites an unresolved cited work.

First-principles Quantum Insights into Bandgap Engineering, Valley Quantum Hall Effect, and Nonlinear Optical Response of Ge-Doped Graphene for Potential Optoelectronic Applications Unresolved cited work

Reference 3

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No event found in the named queried sources as of 2026-08-19T06:32:44.657259+00:00.

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Observation b1eb3eec-7eaf-48a9-aa14-8d7db7be8880 · outbound

This paper cites The reported results were calculated by employing the first -principle DFT methodology based on GGA-PBE potential and hybrid HSE06 functional with and without spin -orbit coupling.

First-principles Quantum Insights into Bandgap Engineering, Valley Quantum Hall Effect, and Nonlinear Optical Response of Ge-Doped Graphene for Potential Optoelectronic Applications The reported results were calculated by employing the first -principle DFT methodology based on GGA-PBE potential and hybrid HSE06 functional with and without spin -orbit coupling

Reference 4

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No event found in the named queried sources as of 2026-08-19T06:32:44.657259+00:00.

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Observation 7d465170-56c9-41d6-8545-dc4651e8967f · outbound

This paper cites However, these results confirm that the doping of Ge in graphene facilitates to open a considerable bandgap.

First-principles Quantum Insights into Bandgap Engineering, Valley Quantum Hall Effect, and Nonlinear Optical Response of Ge-Doped Graphene for Potential Optoelectronic Applications However, these results confirm that the doping of Ge in graphene facilitates to open a considerable bandgap

Reference 5

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Observation 4a9bc94e-e158-4e1f-a3f6-bf41d253aff8 · outbound

This paper cites Nat Phys 3:172–175.

First-principles Quantum Insights into Bandgap Engineering, Valley Quantum Hall Effect, and Nonlinear Optical Response of Ge-Doped Graphene for Potential Optoelectronic Applications Nat Phys 3:172–175

Reference 6

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source=pdf_text observed=2026-08-07T05:32:35.512073Z digest=sha256:395aeff1863bdb64596a7f3be9028aa564f2405f5d6e181a1471f0cc9ecb389d

Observation db8c9dca-4284-4bb5-bfdf-239bceb870b0 · outbound

This paper cites Phys Rev Lett 99(23):236809.

First-principles Quantum Insights into Bandgap Engineering, Valley Quantum Hall Effect, and Nonlinear Optical Response of Ge-Doped Graphene for Potential Optoelectronic Applications Phys Rev Lett 99(23):236809

Reference 7

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source=pdf_text observed=2026-08-07T05:32:35.515535Z digest=sha256:3dd7301647f1f74c4f7c026277c22e306c9d79cba5ce760be44464f4fe2a1d49

Observation d862ed64-94e5-4528-b0e3-8607509180e0 · outbound

This paper cites Phys Rev B 77:235406.

First-principles Quantum Insights into Bandgap Engineering, Valley Quantum Hall Effect, and Nonlinear Optical Response of Ge-Doped Graphene for Potential Optoelectronic Applications Phys Rev B 77:235406

Reference 8

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source=pdf_text observed=2026-08-07T05:32:35.518695Z digest=sha256:8efe050122057d0256ff1201f831da628bac68a0674721a05f748c2f0b4e682c

Observation 0434151a-1d77-49c9-938b-6f539347c300 · outbound

This paper cites (2012) Valley-selective circular dichroism of monolayer molybdenum disulphide.

First-principles Quantum Insights into Bandgap Engineering, Valley Quantum Hall Effect, and Nonlinear Optical Response of Ge-Doped Graphene for Potential Optoelectronic Applications (2012) Valley-selective circular dichroism of monolayer molybdenum disulphide

Reference 9

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source=pdf_text observed=2026-08-07T05:32:35.522080Z digest=sha256:f32cec63c7981f9871f4706a8884ec25d0fa8a270943a60b019b6e6ca3a5f027

Observation a2446b76-33ee-459a-9ac3-239f8ad7d8e3 · outbound

This paper cites Phys Rev Lett 108(19): 196802.

First-principles Quantum Insights into Bandgap Engineering, Valley Quantum Hall Effect, and Nonlinear Optical Response of Ge-Doped Graphene for Potential Optoelectronic Applications Phys Rev Lett 108(19): 196802

Reference 10

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source=pdf_text observed=2026-08-07T05:32:35.525150Z digest=sha256:07f69532cee9651c5dea9a042fa3d81f10ac49473abb2584b25ca05c76477bda

Observation 2fea3ace-eb10-4af0-aba2-b6ce172ee625 · outbound

This paper cites Nat Nanotechnol 7(8):494–498.

First-principles Quantum Insights into Bandgap Engineering, Valley Quantum Hall Effect, and Nonlinear Optical Response of Ge-Doped Graphene for Potential Optoelectronic Applications Nat Nanotechnol 7(8):494–498

Reference 11

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Observation 3abc5da2-afbb-48c1-a510-18f97e6aac80 · outbound

This paper cites Nat Nanotechnol 7(8):490–493.

First-principles Quantum Insights into Bandgap Engineering, Valley Quantum Hall Effect, and Nonlinear Optical Response of Ge-Doped Graphene for Potential Optoelectronic Applications Nat Nanotechnol 7(8):490–493

Reference 12

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No event found in the named queried sources as of 2026-08-19T06:32:44.657259+00:00.

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Observation 80d26dd6-0acb-475b-ad42-9d693905c047 · outbound

This paper cites Schaibley, Hongyi Yu, Genevieve Clark, Pasqual Rivera, Jason S.

First-principles Quantum Insights into Bandgap Engineering, Valley Quantum Hall Effect, and Nonlinear Optical Response of Ge-Doped Graphene for Potential Optoelectronic Applications Schaibley, Hongyi Yu, Genevieve Clark, Pasqual Rivera, Jason S

Reference 13

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source=pdf_text observed=2026-08-07T05:32:35.533850Z digest=sha256:8d335a7ba1bcb3fb18146aa748830489fe0bf07a202989cbfe69c42bea1bfef1

Reference 14

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No event found in the named queried sources as of 2026-08-19T06:32:44.657259+00:00.

source=pdf_text observed=2026-08-07T05:32:35.536890Z digest=sha256:c839a3a395275a804bd3192416d91b8cb456cacd28f0862004cd59d8f2718cf6

Observation 7a5aa9ed-8108-4286-ae17-0c3598b4cba8 · outbound

This paper cites A potential candidate material for quantum anomalous Hall effect: Heterostructures of ferromagnetic insulator and graphene.

First-principles Quantum Insights into Bandgap Engineering, Valley Quantum Hall Effect, and Nonlinear Optical Response of Ge-Doped Graphene for Potential Optoelectronic Applications A potential candidate material for quantum anomalous Hall effect: Heterostructures of ferromagnetic insulator and graphene

Reference 15

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source=pdf_text observed=2026-08-07T05:32:35.540121Z digest=sha256:2d3f18300c2bb414f7d662171a0e2dd66dfedca8d0dc83f960d06dd71c5afd6a

Observation 240eb089-fd47-4820-9b8c-ff99be220201 · outbound

This paper cites Physical Review Letters 132, (2024)096302.

First-principles Quantum Insights into Bandgap Engineering, Valley Quantum Hall Effect, and Nonlinear Optical Response of Ge-Doped Graphene for Potential Optoelectronic Applications Physical Review Letters 132, (2024)096302

Reference 16

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source=pdf_text observed=2026-08-07T05:32:35.543338Z digest=sha256:55db24781a70a7670fd5a89ec47478c661a471bdcda87b499f75629f325fca09

Reference 17

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Observation 4e7792c9-b5cf-4815-8061-af30009885a4 · outbound

This paper cites an unresolved cited work.

First-principles Quantum Insights into Bandgap Engineering, Valley Quantum Hall Effect, and Nonlinear Optical Response of Ge-Doped Graphene for Potential Optoelectronic Applications Unresolved cited work

Reference 18

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No event found in the named queried sources as of 2026-08-19T06:32:44.657259+00:00.

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Observation 5b5397d2-1673-4ad4-af92-8fc6037c1897 · outbound

This paper cites Quantum-Engineered Devices Based on 2D Materials for Next-Generation Information Processing and Storage.

First-principles Quantum Insights into Bandgap Engineering, Valley Quantum Hall Effect, and Nonlinear Optical Response of Ge-Doped Graphene for Potential Optoelectronic Applications Quantum-Engineered Devices Based on 2D Materials for Next-Generation Information Processing and Storage

Reference 19

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source=pdf_text observed=2026-08-07T05:32:35.552011Z digest=sha256:e8faf9f54219a3f9849679f31670541efc4f696ab9f2fe571a909e8300381158

Observation 1bdaf660-b7e1-44d7-9b77-34bdab324e4c · outbound

This paper cites Proposal of graphene band-gap enhancement via heterostructure of graphene with boron nitride in vertical stacking scheme.

First-principles Quantum Insights into Bandgap Engineering, Valley Quantum Hall Effect, and Nonlinear Optical Response of Ge-Doped Graphene for Potential Optoelectronic Applications Proposal of graphene band-gap enhancement via heterostructure of graphene with boron nitride in vertical stacking scheme

Reference 20

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source=pdf_text observed=2026-08-07T05:32:35.554908Z digest=sha256:668b241bdbb060119f8d194276ab0613624f2e7ae36f2bd37d7daac014972005

Observation fa002b6d-17ca-4259-8346-215cae1f65c0 · outbound

This paper cites an unresolved cited work.

First-principles Quantum Insights into Bandgap Engineering, Valley Quantum Hall Effect, and Nonlinear Optical Response of Ge-Doped Graphene for Potential Optoelectronic Applications Unresolved cited work

Reference 21

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No event found in the named queried sources as of 2026-08-19T06:32:44.657259+00:00.

source=pdf_text observed=2026-08-07T05:32:35.557807Z digest=sha256:2a8c250870cc416dbb16f12e67ca8f8f6fa9387860ae119db4ef1101f2256a87

Observation f0d5b6b8-be9a-4091-b461-dc5ef75dfd14 · outbound

This paper cites Valley-dependent electronic transport in a graphene with double magnetic-strained barriers.

First-principles Quantum Insights into Bandgap Engineering, Valley Quantum Hall Effect, and Nonlinear Optical Response of Ge-Doped Graphene for Potential Optoelectronic Applications Valley-dependent electronic transport in a graphene with double magnetic-strained barriers

Reference 22

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Observation 767d5a83-a282-4438-8286-6f818a88fa88 · outbound

This paper cites Valley-dependent band structure and valley polarization in periodically modulated graphene.

First-principles Quantum Insights into Bandgap Engineering, Valley Quantum Hall Effect, and Nonlinear Optical Response of Ge-Doped Graphene for Potential Optoelectronic Applications Valley-dependent band structure and valley polarization in periodically modulated graphene

Reference 23

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source=pdf_text observed=2026-08-07T05:32:35.563679Z digest=sha256:729217ae7c773cf9a6ec7c47d089d2e289b7420acf0064b62d4d295a1d67fca9

Observation 4b762d25-c46d-48c7-8349-1f83bc3203ea · outbound

This paper cites Giant and Controllable Valley Currents in Graphene by Double Pumped THz Light.

First-principles Quantum Insights into Bandgap Engineering, Valley Quantum Hall Effect, and Nonlinear Optical Response of Ge-Doped Graphene for Potential Optoelectronic Applications Giant and Controllable Valley Currents in Graphene by Double Pumped THz Light

Reference 24

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Observation 8d34b912-60c8-4cbb-996d-8b01419172b6 · outbound

This paper cites Advances and Trends in Chemically Doped Graphene.

First-principles Quantum Insights into Bandgap Engineering, Valley Quantum Hall Effect, and Nonlinear Optical Response of Ge-Doped Graphene for Potential Optoelectronic Applications Advances and Trends in Chemically Doped Graphene

Reference 25

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Observation 568ee7bd-27ae-4543-a33e-5957578b53b7 · outbound

This paper cites an unresolved cited work.

First-principles Quantum Insights into Bandgap Engineering, Valley Quantum Hall Effect, and Nonlinear Optical Response of Ge-Doped Graphene for Potential Optoelectronic Applications Unresolved cited work

Reference 26

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No event found in the named queried sources as of 2026-08-19T06:32:44.657259+00:00.

source=pdf_text observed=2026-08-07T05:32:35.572370Z digest=sha256:60f04e95210e3e66c7f1b7dad0dbd1f5e6ac84d614a85e72091ab47e344abf1a

Observation 52523089-e7cd-409e-b33a-8350c71fba42 · outbound

This paper cites QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials,.

First-principles Quantum Insights into Bandgap Engineering, Valley Quantum Hall Effect, and Nonlinear Optical Response of Ge-Doped Graphene for Potential Optoelectronic Applications QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials,

Reference 27

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raw_fallback, observed 2026-08-07T05:32:35.629664Z

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source=pdf_text observed=2026-08-07T05:32:35.575453Z digest=sha256:424a32e1c146a8bb112d4f24880acedf02c5da160505cabb126b22fa978ab673

Reference 28

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source=pdf_text observed=2026-08-07T05:32:35.578335Z digest=sha256:37c368fb51726372220fb65e9a380d89de2584f8eaf9442b387ff22e3b698d69

Observation 1921302b-975f-4fc5-b534-5f72ee795c2b · outbound

This paper cites Second harmonic spectroscopy to optically detect valley polarization in 2D materials.

First-principles Quantum Insights into Bandgap Engineering, Valley Quantum Hall Effect, and Nonlinear Optical Response of Ge-Doped Graphene for Potential Optoelectronic Applications Second harmonic spectroscopy to optically detect valley polarization in 2D materials

Reference 29

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source=pdf_text observed=2026-08-07T05:32:35.581055Z digest=sha256:2a1acbf3f1a94fc26ec9ae346244ca2baf40e93b2b6c0b128e2a6270024c3583

Pith citing papers

Reference 8

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Unavailable: canonical work link unavailable.

source=pdf_text observed=2026-08-03T19:22:31.507261Z digest=sha256:6dea490c521d8bfc34241ded315149576a1594e057f72a9fe7fa1e85f9910648