Pith. sign in

REVIEW 4 major objections 6 minor 51 references

Strain-Stabilized Interfacial Polarization Tunes Work Function Over 1 eV in RuO2/TiO2 Heterostructures

T0 review · 4 major / 6 minor · reviewed 2026-08-06 · deepseek-v4-flash

Challenge this review Re-run · record.json Download PDF Read on arXiv ↗

Pith's one-line read Interfacial polarization in a metallic oxide tunes its work function by more than 1 eV, controlled by just a few nanometers of thickness.

desk verdict Direct ptychographic imaging of polar displacements in a metallic rutile interface is the real advance; the >1 eV KPFM work-function swing is plausible but the ambient-surface confound is not yet excluded. read the letter →

arxiv 2507.07575 v1 pith:N5EPJJZY submitted 2025-07-10 cond-mat.mtrl-sci

Seung Gyo Jeong , Bonnie Y.X. Lin , Mengru Jin , In Hyeok Choi , Seungjun Lee , Zhifei Yang , Sreejith Nair , Rashmi Choudhary
show 9 more authors
Juhi Parikh Anand Santhosh Matthew Neurock Kelsey A. Stoerzinger Jong Seok Lee Tony Low Qing Tu James M. LeBeau Bharat Jalan
This is my paper · ORCID
classification cond-mat.mtrl-sci
keywords interfacialpolarizationpolarmetalsworkfunctiontuningRuO2/TiO2heterostructuresmultisliceelectronptychographyKelvinprobeforcemicroscopyepitaxialstraincriticalthickness
verification ladder T0 review T1 audit T2 compute T3 formal

The pith

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The reading

Epitaxial rutile RuO2 films grown on TiO2 (110) carry a strain-stabilized electric polarization at the buried interface, even though RuO2 is a metal and metals normally screen internal electric fields. The paper argues this interfacial polarization acts as a tunable internal dipole: changing RuO2 thickness from about 2 to 4 nm moves the surface work function by more than 1 eV, with a peak near the ~4 nm critical thickness where the film goes from fully strained to relaxed. Direct atomic-scale images from multislice electron ptychography show polar displacements of ruthenium and titanium ions relative to oxygen octahedra at both interfaces, pointing from TiO2 into RuO2. If correct, this makes interfacial polarization a practical control knob for the electronic surface properties of metallic oxides, not just semiconductors.

What carries the argument

The load-bearing object is the strain-stabilized interfacial polarization: polar displacements of Ru and Ti cations relative to their oxygen octahedra, generated where fully strained RuO2 meets TiO2 and directed out of plane along [110]. It is visualized atom-by-atom by multislice electron ptychography, which reconstructs the projected electrostatic potential from 4D-STEM data and lets the authors locate both cation and oxygen columns with enough precision to measure ~10 pm displacements. The same polarization supplies the internal electric field that raises the surface work function, and its thickness dependence, set by the fully-strained-to-relaxed transition near 4 nm, explains the non-monotonic work-function curve. In transport, the polarization acts as an electrical dead layer whose extracted thickness (~1.6 nm for one interface, ~0.7 nm for a symmetric stack) matches the polar region seen in the images.

What would settle it

A decisive test would be to measure the same RuO2 thickness series under ultrahigh vacuum with in-situ surface cleaning, or with an inert capping layer removed only in vacuum, and see whether the non-monotonic work-function peak near 4 nm survives; if the 1 eV shift is dominated by adsorbates or surface chemistry rather than the buried polarization, it should largely disappear or change shape. A complementary check is to grow a thickness series at fixed strain using a substrate with a different lattice mismatch: if strain is the control parameter, the peak should move with the critical thickness predicted by the new mismatch.

Watch

Extended reading notes

Core claim

The central claim is that a metallic rutile oxide, RuO2, can host a stable interfacial polarization when epitaxially strained on TiO2 (110), and that this polarization changes the metal's work function by over 1 eV as the RuO2 thickness is varied between roughly 2 and 4 nm. The work function rises from about 4.25 eV at 1.5 nm to 5.40 eV at 3.5 nm, then falls as strain relaxes beyond the ~4 nm critical thickness, before recovering toward the bulk RuO2 value. Multislice electron ptychography resolves out-of-plane polar displacements up to about 9 pm on average (17.4 pm locally) near the interface, oriented from TiO2 into RuO2 and opposite at the two interfaces of a symmetric TiO2/RuO2/TiO2 stack. Transport measurements support the same picture: an interfacial dead layer of suppressed conductivity about 1.6 nm thick in RuO2/TiO2, reduced to ~0.7 nm when opposing interfaces partially cancel. The paper concludes that interfacial polarization can coexist with metallicity in rutile oxides and can be engineered by epitaxial strain and thickness.

Load-bearing premise

The central assumption is that the work-function shifts measured by Kelvin probe force microscopy come from the buried interfacial polarization, even though those measurements were made in air on uncapped RuO2 films, where adsorbed water or contamination can shift metal work functions by more than the 1 eV claimed.

Editorial extensions

If this is right

  • Work function of a metallic oxide can be changed by more than 1 eV through thickness control alone, without surface modification.
  • The effect is tied to the fully strained state: below the ~4 nm critical thickness the RuO2 is polar and the work function is enhanced; above it, strain relaxation removes the polarization and the enhancement.
  • Interfacial polarization creates an electrical dead layer in a conductive film, reducing effective conducting thickness by ~1.6 nm for one RuO2/TiO2 interface and ~0.7 nm when two opposing interfaces partly cancel.
  • Transport and work-function anomalies appear at the same thickness, so Kelvin probe and Hall measurements together map the same interfacial phase.

Reading between the lines

Editorial extensions of the paper, not claims the author makes directly.

  • If the mechanism is general, thickness becomes a non-invasive dial for the work function of any polar metallic film, which would allow tuning catalytic activity or injection barriers without changing surface chemistry.
  • The ambient-air Kelvin probe measurements leave room for a decisive follow-up: repeating the thickness series under ultrahigh vacuum or after in-situ cleaning. If the peak near 4 nm survives, the interfacial-polarization assignment is strongly confirmed.
  • The symmetry of the stack suggests a design handle the paper only touches implicitly: pairing RuO2 with two different oxides should allow the opposing interface dipoles to be unbalanced, producing a net polarization whose sign and magnitude are set by the heterostructure, not by the metal alone.
Share X Bluesky LinkedIn Reddit HN

Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, and a circularity audit.

Referee Report

4 major / 6 minor

Summary. The paper reports that interfacial polarization in epitaxial RuO2/TiO2(110) heterostructures can modulate the RuO2 surface work function by more than 1 eV as a function of RuO2 thickness, with a critical thickness of about 4 nm that coincides with strain relaxation. The authors support this claim with multislice electron ptychography on a symmetric TiO2/RuO2/TiO2 stack, which shows out-of-plane polar cation displacements near both interfaces, with Kelvin probe force microscopy (KPFM) on uncapped RuO2/TiO2 films showing a non-monotonic work-function dependence on thickness, and with transport measurements that they interpret as evidence of an interfacial electrical dead layer. The paper argues that strained RuO2 becomes polar at interfaces and that this polarization modifies the surface work function and transport properties, establishing interfacial polarization as a design handle in metallic oxides.

Significance. If the central causal claim is established, this would be a notable advance: it would show that interfacial polarization can be stabilized in a metallic rutile oxide, that it can be controlled by strain and thickness, and that it produces a work-function modulation comparable in magnitude to molecular adsorption but without surface modification. The strengths of the paper are the state-of-the-art ptychographic imaging that directly resolves oxygen and cation columns and quantifies polar displacements of ~9 pm, the high-quality structural characterization (XRR, XRD, RSM), the precision of the KPFM measurements in terms of VCPD scatter, and the internally consistent transport analysis. However, the paper currently leaves a gap between the measured interfacial displacements in a capped symmetric stack and the claimed >1 eV work-function modulation measured on uncapped films, and the KPFM data lack controls for surface-chemistry effects that the paper itself shows can produce shifts of comparable magnitude. The manuscript is therefore a strong experimental study whose headline claim requires additional evidence before it can be accepted at the level claimed.

major comments (4)
  1. [KPFM Methods and Fig. 2b] All KPFM measurements are performed under ambient conditions on uncapped RuO2 films, yet the central claim attributes the >1 eV work-function modulation to the buried interfacial polarization. RuO2 is a catalytic oxide that adsorbs water, hydrocarbons, and oxygen, and the coverage and bonding of such adsorbates are expected to depend on film thickness and strain state. The paper provides no surface chemical analysis (XPS/UPS survey, C 1s, O 1s) across the thickness series, no controlled desorption or cleaning step, and no capping control. The paper's own Fig. 3 shows that molecular adsorption on metals produces work-function shifts of ~1.2 eV, i.e., of the same magnitude as the claimed effect. Without excluding thickness-dependent surface chemistry, the KPFM data do not uniquely support interfacial polarization as the cause of the modulation.
  2. [Fig. 1c versus Fig. 2b] The ptychographic evidence of polar displacements is obtained from a symmetric TiO2/RuO2/TiO2 capped stack, whereas the KPFM work-function data are obtained from uncapped RuO2/TiO2 films. These are different sample geometries: the capped stack has two interfaces with opposite polarization directions, while the uncapped film has a free surface and a single buried interface. The paper assumes, but does not demonstrate or calculate, that the same interfacial polarization exists in the uncapped films and that its magnitude is sufficient to produce the observed work-function shift. A direct measurement or first-principles calculation for the actual KPFM geometry is needed to close this gap.
  3. [Fig. 2b and the sentence 'It is conceivable...'] The causal link between the measured polar displacements and the >1 eV work-function shift is presented only as a hypothesis. No quantitative electrostatic or first-principles model connects the ~9 pm displacements and the metallic screening length of RuO2 to the measured change in surface work function, nor does any model reproduce the non-monotonic thickness dependence with a peak at ~4 nm. Alternative explanations such as thickness-dependent surface termination, adsorbate coverage, quantum confinement, or strain-dependent surface dipole are not quantitatively excluded. A model that predicts the magnitude and thickness dependence of the work-function change, even a minimal one, is required to make the central claim load-bearing rather than suggestive.
  4. [Transport analysis, second section of main text] The transport evidence for an interfacial dead layer rests on a model that assumes a parallel conduction picture with σi1 << σb and then extracts ti1 = 1.59 nm from a linear fit. The paper explicitly acknowledges that the model is simplified and ignores the spatial variation of the electric field across the film. This is not the central claim of the paper, but the extracted dead-layer thickness is used as supporting evidence for interfacial polarization. The assumption σi1 << σb is checked using a single data point at tRuO2 = 2.1 nm, which is a weak validation, and the extracted ti1 values should be presented with fit uncertainties. I would treat the transport section as suggestive rather than decisive, and the main claim should not rest on it.
minor comments (6)
  1. [Abstract] The abstract contains a duplicated word: 'Kelvin probe probe microscopy' should read 'Kelvin probe force microscopy'.
  2. [Abstract and main text] The abstract refers to 'small thickness variation (2-4 nm)' while the body abstract and main text state '2-3 nm'; please make the thickness range consistent throughout.
  3. [Fig. 2b] The work-function values in Fig. 2b are presented without error bars or a statement of the number of measurements per thickness; given that the central claim is a non-monotonic trend of about 1 eV, the statistical uncertainty of each point should be shown explicitly.
  4. [KPFM calibration, Methods] The tip work function is calibrated by UPS on a single 5.2 nm RuO2/TiO2 sample that has been exposed to ambient conditions before UPS; since UPS is performed in vacuum while KPFM is performed in air, the calibration should be discussed in terms of possible differences in surface adsorbate state between the two measurements.
  5. [References] Reference 29 (Uchida et al.) is cited for the statement that strained RuO2 lacks zone-center soft modes; please verify that this reference indeed reports the phonon dispersion and soft-mode analysis rather than only superconductivity, or add a more specific citation.
  6. [General notation] The notation tRuO2 is used both as a growth parameter and as the thickness extracted from XRR and ptychography; please define explicitly which value is used in each figure and confirm the agreement is 3.8 nm (XRR) versus 3.9 nm (ptychography) with a statement of measurement uncertainty.

Circularity Check

0 steps flagged · score 2.0 of 10

No significant circularity: three independent measurements anchor the central claim; the sole self-citation (ref 36) is corroborative, not load-bearing.

full rationale

The paper's central derivation is not circular. The interfacial-polarization claim is supported by three independent measurements: (1) multislice electron ptychography directly images polar displacements in a capped TiO2/RuO2/TiO2 stack (Fig. 1c,d); (2) KPFM directly measures work-function values on uncapped RuO2/TiO2 films versus thickness (Fig. 2b); and (3) XRD RSM independently shows strain relaxation between 4 and 6.5 nm (Fig. 2c,d). The critical-thickness correlation is an empirical coincidence, not a fitted parameter, and no equation defines one measured quantity in terms of the other. The transport 'dead layer' is extracted by fitting a two-channel conductance expression whose slope and x-intercept are fit parameters; the paper explicitly labels this a simplified model, and the result is not the paper's headline claim. The only self-citation is ref 36, an overlapping-author preprint on SHG symmetry changes; it is used as corroboration for the polar-to-nonpolar transition, but the present RSM strain-relaxation data and ptychographic displacements independently support that interpretation, so the argument does not reduce to the self-citation. The ambient-condition KPFM measurement (Methods, KPFM section) is a surface-chemistry confound that is a correctness risk, not circularity. Thus no formal circular step is present; score 2 reflects the minor self-citation.

Assumptions & free parameters 3 free parameters · 6 assumptions · 0 invented entities

The central claim depends on three major unproven assumptions: that ptychography on a capped stack represents the uncapped films, that metallic screening does not eliminate the polarization's effect on the surface work function, and that ambient KPFM is free of adsorbate effects. The transport dead-layer values are derived from a fitted two-channel model rather than from an independent measurement.

free parameters (3)
  • sigma_b (bulk conductivity of RuO2 in heterostructure) = 15,875 S/cm (RuO2/TiO2); 11,700 S/cm (TiO2/RuO2/TiO2)
    Extracted from linear fits of sigma_2D versus t_RuO2 in Figs. 4a and 4b; depends on the assumed parallel-conduction model.
  • t_i1 (effective interfacial dead-layer thickness) = 1.59 nm (RuO2/TiO2); t_i1 + t_i2 = 0.71 nm (TiO2/RuO2/TiO2)
    Obtained from the x-intercept of the linear fits in Figs. 4a and 4b; used to infer the dead layer and to estimate sigma_i1.
  • sigma_i1 (interfacial conductivity) = 4,117 S/cm
    Estimated using the fitted sigma_b and t_i and one representative data point at t_RuO2 = 2.1 nm; presented as a self-consistency estimate rather than an independent measurement.
assumptions (6)
  • standard math Multislice electron ptychography recovers object phase proportional to projected potential and allows atomic column localization with sub-pm accuracy.
    Invoked in the main text and Methods; all displacement measurements depend on this established computational imaging method.
  • domain assumption A polar displacement of cations relative to oxygen octahedra in a metal creates a macroscopic electric field that changes the surface work function despite metallic screening.
    Central to the interpretation in Fig. 2e; the authors state 'It is conceivable...' and 'We hypothesize...' rather than proving this relation.
  • domain assumption KPFM in ambient air measures the intrinsic work function of the RuO2 surface with no significant thickness-dependent adsorbate or contamination contribution.
    Used in the KPFM Methods and Fig. 2b; no control experiment is reported, and Fig. 3 itself shows that adsorbates can shift work functions by more than 1 eV.
  • domain assumption The RuO2 films studied by KPFM and transport (uncapped) and by ptychography (capped with TiO2) have the same interfacial polarization structure.
    Ptychography was performed on TiO2/RuO2/TiO2 to avoid surface damage; KPFM and transport were performed on uncapped RuO2/TiO2 films without direct verification of structural equivalence.
  • domain assumption Electrical conductivity is well described by parallel bulk and interfacial channels with a single effective interfacial dead layer.
    Used in Figs. 4a and 4b; the authors explicitly acknowledge this model is simplified and ignores the interfacial electric field.
  • domain assumption Strain relaxation observed by RSM between 4 and 6.5 nm defines the polar-to-nonpolar transition that explains the work-function peak.
    Used in Figs. 2c-e to connect the KPFM peak to the onset of relaxation; this is a correlation, not a mechanistic proof.

how reviews work

0 comments
Cite this review

Pith. "Pith review of Strain-Stabilized Interfacial Polarization Tunes Work Function Over 1 eV in RuO2/TiO2 Heterostructures." pith.science (2026). https://pith.science/paper/N5EPJJZY

@misc{pith2026250707575,
  author       = {Pith},
  title        = {Pith review of: Strain-Stabilized Interfacial Polarization Tunes Work Function Over 1 eV in RuO2/TiO2 Heterostructures},
  year         = {2026},
  howpublished = {\url{https://pith.science/paper/N5EPJJZY}},
  note         = {Machine review of arXiv:2507.07575}
}
read the original abstract

Interfacial polarization-charge accumulation at the heterointerface-is a well-established tool in semiconductors, but its influence in metals remains unexplored. Here, we demonstrate that interfacial polarization can robustly modulate surface work function in metallic rutile RuO2 layers in epitaxial RuO2/TiO2 heterostructures grown by hybrid molecular beam epitaxy. Using multislice electron ptychography, we directly visualize polar displacements of transition metal ions relative to oxygen octahedra near the interface, despite the conductive nature of RuO2. This interfacial polarization enables over 1 eV modulation of the RuO2 work function, controlled by small thickness variation (2-4 nm) as measured by Kelvin probe probe microscopy, with a critical thickness of 4 nm - corresponding to the transition from fully strained to relaxed film. These results establish interfacial polarization as a powerful route to control electronic properties in metals and have implications for designing tunable electronic, catalytic, and quantum devices through interfacial control in polar metallic systems.

Figures

Figures reproduced from arXiv: 2507.07575 by the authors.

Figure 1
Figure 1. Interfacial polar displacement in TiO2/RuO2/TiO2 (110) epitaxial heterostructure. a,b, (a) XRR and (b) XRD θ-2θ scan results for a 2.5 nm TiO2/tRuO₂ = 3.8 nm RuO2/2.5 nm TiO2 heterostructures, grown on the TiO2 (110) substrate. The scattered symbols and lines in the XRR results indicate the experimental data and the corresponding fitting results, respectively. The inset in (b) shows an AFM image for the TiO2/RuO2/Ti… view at source ↗
Figure 2
Figure 2. Interfacial polarization induced RuO2 thickness evolutions of surface work function on RuO2/TiO2 (110) epitaxial thin films. a, Schematic illustration of the KPFM setup with AC (VAC) and DC voltages (VDC) used to measure surface work function (Φ) of epitaxial RuO2/TiO2 (110) thin films. b, Φ of RuO2/TiO2 (110) as a function of tRuO₂, showing unexpectedly large enhancements. c,d, XRD RSM results around the (332) TiO2… view at source ↗

Discussion (0). Continue with ORCID to comment.

Reference graph

Works this paper leans on

51 extracted references · 50 canonical work pages

  1. [1]

    A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface

    Ohtomo A, Hwang HY . A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface. Nature 427, 423-426 (2004)

    work page 2004

  2. [2]

    Physics of thin-film ferroelectric oxides

    Dawber M, Rabe KM, Scott JF. Physics of thin-film ferroelectric oxides. Rev. Mod. Phys. 77, 1083-1130 (2005)

    work page 2005

  3. [3]

    Strain Tuning of Ferroelectric Thin Films

    Schlom DG, Chen L-Q, Eom C-B, Rabe KM, Streiffer SK, Triscone J-M. Strain Tuning of Ferroelectric Thin Films. Annu. Rev. Mater. Res. 37, 589-626 (2007)

    work page 2007

  4. [4]

    Termination control of the interface dipole in La0.7Sr0.3MnO3/Nb:SrTiO3 (001) Schottky junctions

    Hikita Y , Nishikawa M, Yajima T, Hwang HY . Termination control of the interface dipole in La0.7Sr0.3MnO3/Nb:SrTiO3 (001) Schottky junctions. Phys. Rev. B 79, 073101 (2009)

    work page 2009

  5. [5]

    Interface Physics in Complex Oxide Heterostructures

    Zubko P, Gariglio S, Gabay M, Ghosez P, Triscone J-M. Interface Physics in Complex Oxide Heterostructures. Annu. Rev. Condens. Matter Phys. 2, 141-165 (2011)

    work page 2011

  6. [6]

    Ferroelectric

    Anderson PW, Blount EI. Symmetry Considerations on Martensitic Transformations: "Ferroelectric" Metals? Phys. Rev. Lett. 14, 217-219 (1965)

    work page 1965

  7. [7]

    Polar Metals: Principles and Prospects

    Bhowal S, Spaldin NA. Polar Metals: Principles and Prospects. Annu. Rev. Mater. Res. 53, 53-79 (2023)

    work page 2023

  8. [8]

    Polar metals taxonomy for materials classification and discovery

    Hickox-Young D, Puggioni D, Rondinelli JM. Polar metals taxonomy for materials classification and discovery. Phys. Rev. Mater. 7, 010301 (2023)

    work page 2023

Show all 51 references
  1. [9]

    A ferroelectric-like structural transition in a metal

    Shi Y , Guo Y , Wang X, Princep AJ, Khalyavin D, Manuel P, et al. A ferroelectric-like structural transition in a metal. Nat. Mater. 12, 1024-1027 (2013)

    2013

  2. [10]

    Designing a robustly metallic noncenstrosymmetric ruthenate oxide with large thermopower anisotropy

    Puggioni D, Rondinelli JM. Designing a robustly metallic noncenstrosymmetric ruthenate oxide with large thermopower anisotropy. Nat. Commun. 5, 3432 (2014)

    2014

  3. [11]

    Polar metals by geometric design

    Kim TH, Puggioni D, Yuan Y , Xie L, Zhou H, Campbell N, et al. Polar metals by geometric design. Nature 533, 68-72 (2016)

    2016

  4. [12]

    ‘Ferroelectric’ metals reexamined: fundamental mechanisms and design considerations for new materials

    Benedek NA, Birol T. ‘Ferroelectric’ metals reexamined: fundamental mechanisms and design considerations for new materials. J. Mater. Chem. C 4, 4000-4015 (2016)

    2016

  5. [13]

    Persistence of Ferroelectricity in BaTiO3 through the Insulator-Metal Transition

    Kolodiazhnyi T, Tachibana M, Kawaji H, Hwang J, Takayama-Muromachi E. Persistence of Ferroelectricity in BaTiO3 through the Insulator-Metal Transition. Phys. Rev. Lett. 104, 147602 (2010)

    2010

  6. [14]

    Displacement-Type Ferroelectricity with Off-Center Magnetic Ions in Perovskite Sr1-xBaxMnO3

    Sakai H, Fujioka J, Fukuda T, Okuyama D, Hashizume D, Kagawa F, et al. Displacement-Type Ferroelectricity with Off-Center Magnetic Ions in Perovskite Sr1-xBaxMnO3. Phys. Rev. Lett. 107, 137601 (2011)

    2011

  7. [15]

    Rotation-reversal symmetries in crystals and handed structures

    Gopalan V , Litvin DB. Rotation-reversal symmetries in crystals and handed structures. Nat. Mater. 10, 376-381 (2011)

    2011

  8. [16]

    Ferroelectric-thermoelectricity and Mott transition of ferroelectric oxides with high electronic conductivity

    Lee S, Bock JA, Trolier-McKinstry S, Randall CA. Ferroelectric-thermoelectricity and Mott transition of ferroelectric oxides with high electronic conductivity. J. Eur. Ceram. Soc. 32, 3971-3988 (2012)

    2012

  9. [17]

    Critical enhancement of thermopower in a chemically tuned polar semimetal MoTe2

    Sakai H, Ikeura K, Bahramy MS, Ogawa N, Hashizume D, Fujioka J, et al. Critical enhancement of thermopower in a chemically tuned polar semimetal MoTe2. Sci. Adv. 2, e1601378 (2016)

    2016

  10. [18]

    Observation of Fermi arc and its connection with bulk states in the candidate type-II Weyl semimetal WTe2

    Wang C, Zhang Y , Huang J, Nie S, Liu G, Liang A, et al. Observation of Fermi arc and its connection with bulk states in the candidate type-II Weyl semimetal WTe2. Phys. Rev. B 94, 241119 (2016)

    2016

  11. [19]

    Observation of Fermi arcs in the type-II Weyl semimetal candidate WTe2

    Wu Y , Mou D, Jo NH, Sun K, Huang L, Bud'ko SL, et al. Observation of Fermi arcs in the type-II Weyl semimetal candidate WTe2. Phys. Rev. B 94, 121113 (2016)

    2016

  12. [20]

    Nonlinear anomalous Hall effect in few-layer WTe2

    Kang K, Li T, Sohn E, Shan J, Mak KF. Nonlinear anomalous Hall effect in few-layer WTe2. Nat. Mater. 18, 324-328 (2019)

    2019

  13. [21]

    Observation of the 22 nonlinear Hall effect under time-reversal-symmetric conditions

    Ma Q, Xu S-Y , Shen H, MacNeill D, Fatemi V , Chang T-R, et al. Observation of the 22 nonlinear Hall effect under time-reversal-symmetric conditions. Nature 565, 337-342 (2019)

    2019

  14. [22]

    Spin-orbit-coupled ferroelectric superconductivity

    Kanasugi S, Yanase Y . Spin-orbit-coupled ferroelectric superconductivity. Phys. Rev. B 98, 024521 (2018)

    2018

  15. [23]

    Coupled ferroelectricity and superconductivity in bilayer Td-MoTe2

    Jindal A, Saha A, Li Z, Taniguchi T, Watanabe K, Hone JC, et al. Coupled ferroelectricity and superconductivity in bilayer Td-MoTe2. Nature 613, 48-52 (2023)

    2023

  16. [24]

    Artificial two-dimensional polar metal at room temperature

    Cao Y , Wang Z, Park SY , Yuan Y , Liu X, Nikitin SM, et al. Artificial two-dimensional polar metal at room temperature. Nat. Commun. 9, 1547 (2018)

    2018

  17. [25]

    Artificial two-dimensional polar metal by charge transfer to a ferroelectric insulator

    Zhou WX, Wu HJ, Zhou J, Zeng SW, Li CJ, Li MS, et al. Artificial two-dimensional polar metal by charge transfer to a ferroelectric insulator. Commun. Phys. 2, 125 (2019)

    2019

  18. [26]

    Interface-induced magnetic polar metal phase in complex oxides

    Meng M, Wang Z, Fathima A, Ghosh S, Saghayezhian M, Taylor J, et al. Interface-induced magnetic polar metal phase in complex oxides. Nat. Commun. 10, 5248 (2019)

    2019

  19. [27]

    Ptychographic transmission microscopy in three dimensions using a multi-slice approach

    Maiden AM, Humphry MJ, Rodenburg JM. Ptychographic transmission microscopy in three dimensions using a multi-slice approach. J. Opt. Soc. Am. A 29, 1606-1614 (2012)

    2012

  20. [28]

    Electron ptychography achieves atomic-resolution limits set by lattice vibrations

    Chen Z, Jiang Y , Shao Y-T, Holtz ME, Odstrčil M, Guizar-Sicairos M, et al. Electron ptychography achieves atomic-resolution limits set by lattice vibrations. Science 372, 826-831 (2021)

    2021

  21. [29]

    Superconductivity in Uniquely Strained RuO2 Films

    Uchida M, Nomoto T, Musashi M, Arita R, Kawasaki M. Superconductivity in Uniquely Strained RuO2 Films. Phys. Rev. Lett. 125, 147001 (2020)

    2020

  22. [30]

    Dependence of the Work Function of TiO2 (Rutile) on Crystal Faces, Studied by a Scanning Auger Microprobe

    Imanishi A, Tsuji E, Nakato Y . Dependence of the Work Function of TiO2 (Rutile) on Crystal Faces, Studied by a Scanning Auger Microprobe. J. Phys. Chem. C 111, 2128-2132 (2007)

    2007

  23. [31]

    Thermally grown ruthenium oxide thin films

    Jelenkovic EV , Tong KY . Thermally grown ruthenium oxide thin films. J. Vac. Sci. Technol. B 22, 2319-2325 (2004)

    2004

  24. [32]

    Explicit solvent effects on (110) ruthenium oxide surface wettability: Structural, electronic and mechanical properties of rutile RuO2 by means of spin-polarized DFT-MD

    Creazzo F, Luber S. Explicit solvent effects on (110) ruthenium oxide surface wettability: Structural, electronic and mechanical properties of rutile RuO2 by means of spin-polarized DFT-MD. Appl. Surf. Sci. 570, 150993 (2021)

    2021

  25. [33]

    Ionization sensitization of doping in co-deposited organic semiconductor films

    Shinmura Y , Yamashina Y , Kaji T, Hiramoto M. Ionization sensitization of doping in co-deposited organic semiconductor films. Appl. Phys. Lett. 105, (2014)

    2014

  26. [34]

    Characteristics and mechanism of tunable work function gate electrodes using a bilayer metal structure on SiO2 and HfO2

    Ching-Huang L, Wong GMT, Deal MD, Tsai W, Majhi P, Chi On C, et al. Characteristics and mechanism of tunable work function gate electrodes using a bilayer metal structure on SiO2 and HfO2. IEEE Electron Device Lett. 26, 445-447 (2005)

    2005

  27. [35]

    Layer-Thickness-Dependent Work Function of MoS2 on Metal and Metal Oxide Substrates

    Lattyak C, Gehrke K, Vehse M. Layer-Thickness-Dependent Work Function of MoS2 on Metal and Metal Oxide Substrates. J. Phys. Chem. C 126, 13929-13935 (2022)

    2022

  28. [36]

    Altermagnetic Polar Metallic phase in Ultra-Thin Epitaxially-Strained RuO2 Films

    Jeong SG, Choi IH, Nair S, Buiarelli L, Pourbahari B, Oh JY, et al. Altermagnetic Polar Metallic phase in Ultra-Thin Epitaxially-Strained RuO2 Films. arXiv preprint arXiv:2405.05838, (2024)

    2024 arXiv

  29. [37]

    Termination layer dependence of Schottky barrier height for La0.6Sr0.4MnO3/Nb:SrTiO3 heterojunctions

    Minohara M, Yasuhara R, Kumigashira H, Oshima M. Termination layer dependence of Schottky barrier height for La0.6Sr0.4MnO3/Nb:SrTiO3 heterojunctions. Phys. Rev. B 81, 235322 (2010)

    2010

  30. [38]

    A Universal Method to Produce Low–Work Function Electrodes for Organic Electronics

    Zhou Y , Fuentes-Hernandez C, Shim J, Meyer J, Giordano AJ, Li H, et al. A Universal Method to Produce Low–Work Function Electrodes for Organic Electronics. Science 336, 327-332 (2012)

    2012

  31. [39]

    Optical manipulation of work function contrasts on metal thin films

    Ravi SK, Sun W, Nandakumar DK, Zhang Y , Tan SC. Optical manipulation of work function contrasts on metal thin films. Sci. Adv. 4, eaao6050 (2018)

    2018

  32. [40]

    The Effect of Oxygen on the Work Function of Tungsten Gate Electrodes in MOS Devices

    Grubbs ME, Deal M, Nishi Y , Clemens BM. The Effect of Oxygen on the Work Function of Tungsten Gate Electrodes in MOS Devices. IEEE Electron Device Lett. 30, 925-927 (2009)

    2009

  33. [41]

    Tuning of 23 noble metal work function with organophosphonate nanolayers

    Ramanath G, Kwan M, Chow PK, Quintero YC, Mutin PH, Ramprasad R. Tuning of 23 noble metal work function with organophosphonate nanolayers. Appl. Phys. Lett. 105, (2014)

    2014

  34. [42]

    Large Work Function Modulation of Monolayer MoS2 by Ambient Gases

    Lee SY , Kim UJ, Chung J, Nam H, Jeong HY , Han GH, et al. Large Work Function Modulation of Monolayer MoS2 by Ambient Gases. ACS Nano 10, 6100-6107 (2016)

    2016

  35. [43]

    Effects of strain and strain rate on electronic behavior of metal surfaces under bending and tension tests

    Han HQ, Shi CB, Xu WM, Carl CM. Effects of strain and strain rate on electronic behavior of metal surfaces under bending and tension tests. Mater. Des. 31, 633-635 (2010)

    2010

  36. [44]

    Electrical Transport Properties of IrO2 and RuO2

    Ryden WD, Lawson AW, Sartain CC. Electrical Transport Properties of IrO2 and RuO2. Phys. Rev. B 1, 1494-1500 (1970)

    1970

  37. [45]

    Revolving scanning transmission electron microscopy: Correcting sample drift distortion without prior knowledge

    Sang X, LeBeau JM. Revolving scanning transmission electron microscopy: Correcting sample drift distortion without prior knowledge. Ultramicroscopy 138, 28-35 (2014)

    2014

  38. [46]

    High Dynamic Range Pixel Array Detector for Scanning Transmission Electron Microscopy

    Tate MW, Purohit P, Chamberlain D, Nguyen KX, Hovden R, Chang CS, et al. High Dynamic Range Pixel Array Detector for Scanning Transmission Electron Microscopy. Microsc. Microanal. 22, 237-249 (2016)

    2016

  39. [47]

    Wakonig K, Stadler H-C, Odstrcil M, Tsai EHR, Diaz A, Holler M, et al. PtychoShelves, a versatile high-level framework for high-performance analysis of ptychographic dataThis article will form part of a virtual special issue of the journal on ptychography software and technica...

    2020

  40. [48]

    Maximum-likelihood refinement for coherent diffractive imaging

    Thibault P, Guizar-Sicairos M. Maximum-likelihood refinement for coherent diffractive imaging. New J. Phys. 14, 063004 (2012)

    2012

  41. [49]

    Reconstructing state mixtures from diffraction measurements

    Thibault P, Menzel A. Reconstructing state mixtures from diffraction measurements. Nature 494, 68-71 (2013)

    2013

  42. [50]

    X-ray ptychography with extended depth of field

    Tsai EHR, Usov I, Diaz A, Menzel A, Guizar-Sicairos M. X-ray ptychography with extended depth of field. Opt. Express 24, 29089-29108 (2016)

    2016

  43. [51]

    Position averaged convergent beam electron diffraction: Theory and applications

    LeBeau JM, Findlay SD, Allen LJ, Stemmer S. Position averaged convergent beam electron diffraction: Theory and applications. Ultramicroscopy 110, 118-125 (2010). 24 Acknowledgements Film synthesis and structural characterizations (S.G.J. and B.J.) were supported by the U.S. De...

    2010

Pith tools

Reviewed August 6, 2026 · model on record in the stance chip above.