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REVIEW 2 major objections 6 minor 52 references

Above-band light narrows the optical linewidth of single silicon T centers by up to 70% by filling nearby charge traps.

Reviewed by Pith at T0; open to challenge. T0 means a machine referee read the full paper against a public rubric. the ladder, T0–T4 →

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2026-07-31 05:53 UTC pith:TQNR5TSD

load-bearing objection Solid experimental fix for device T-center spectral diffusion; the Holtsmark model is optional scaffolding, not the result. the 2 major comments →

arxiv 2607.28485 v1 pith:TQNR5TSD submitted 2026-07-30 quant-ph

Optical linewidth narrowing for device-coupled single T centers

Adam Johnston , Yu-En Wong , Shengbin Yan , Ulises Felix-Rendon , Songtao Chen This is my paper
classification quant-ph
keywords T centersilicon photonicsspectral diffusionlinewidth narrowingabove-band excitationcharge trapsquantum networkingStark effect
verification ladder T0 review T1 audit T2 compute T3 formal T4 reserved

The pith

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

Single T centers in silicon are promising telecom-band spins for quantum networks, but once they are built into nanophotonic devices their optical lines broaden by roughly two hundred times the cavity-enhanced radiative width because of spectral diffusion from fluctuating charge traps. This paper shows that brief pulses of above-band light (photon energy larger than the silicon band gap), delivered through a laser-scanning microscope, generate free carriers that fill those traps and cut the linewidth by as much as 70 percent. The narrowing lasts hundreds of microseconds in the dark, requires true above-gap photons, and is accompanied by a bipolar center-frequency shift. A rate-equation model of trap filling, combined with a Holtsmark description of the residual electric-field noise, accounts for both the narrowing and the shift across power, timing, and wavelength sweeps. If the method continues to work, device-coupled T centers move much closer to the linewidths needed for high-fidelity spin readout and remote entanglement.

Core claim

Above-band optical excitation delivered to device-coupled single T centers reduces their spectral-diffusion-limited optical linewidth by up to 70 percent (for example from 1.38 GHz to 0.59 GHz) because photo-generated free carriers fill and neutralize nearby charge traps; the same process produces a center-frequency shift whose sign and magnitude vary from center to center, and both effects are quantitatively captured by a trap-filling rate equation plus Holtsmark field statistics.

What carries the argument

A rate equation for the filled-trap fraction p(t) driven by above-band filling, resonant-laser filling/detrapping, and dark detrapping, linked to center shift and linewidth change through the linear and quadratic Stark response and a Holtsmark (σ ∝ ρ^{2/3}) model of residual trap-field noise.

Load-bearing premise

The fluctuating electric fields from a finite number of randomly placed bulk traps inside a narrow waveguide can be treated as an ideal three-dimensional Holtsmark distribution, with surface traps and Stark-tensor anisotropy playing only secondary roles.

What would settle it

Repeat the pulsed above-band experiment on the same centers while independently measuring or controlling surface-charge density (for example by passivation or gate electrodes); if the observed time-constant ratio between linewidth and center-shift dynamics, or the bipolar shift pattern, disappears when bulk traps are no longer dominant, the Holtsmark-plus-bulk-trap model fails.

Watch this falsifier — get emailed when new claim-graph text bears on it.

If this is right

  • Sub-100 MHz optical linewidths become realistic once thermal broadening is lowered and trap densities are reduced by gentler T-center formation or surface passivation.
  • Higher optical cooperativity enables high-fidelity single-shot spin readout and generation of indistinguishable telecom photons from cavity-coupled T centers.
  • Spin–photon entanglement with time-bin qubits and sender–receiver remote entanglement protocols become practical once the linewidth approaches the Purcell-enhanced radiative width.
  • External vector DC electric fields can further null the residual Stark coefficient |μ + α E₀|, pushing linewidths still lower for both waveguide and cavity geometries.

Where Pith is reading between the lines

These are editorial extensions of the paper, not claims the author makes directly.

  • The same free-carrier trap-filling route should apply to other silicon color centers whose optical coherence is limited by charge noise rather than by intrinsic dephasing.
  • Combining above-band stabilization with p-i-n electric-field control could simultaneously deplete traps and cancel the residual built-in field, offering a two-knob path to near-lifetime-limited lines.
  • If surface traps dominate for centers very close to etched sidewalls, a two-dimensional field model would predict identical time constants for linewidth and center shift—providing a spatial diagnostic of trap dimensionality.

Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, simulated authors' rebuttal, and a circularity audit.

Referee Report

2 major / 6 minor

Summary. The manuscript reports optical linewidth narrowing of device-coupled single T centers in silicon by up to ~70% (e.g., Itokawa: 1.38±0.03 GHz → 0.59±0.01 GHz) using pulsed above-band excitation (λ_AB = 980 nm, and consistently 532 nm) delivered through a laser scanning microscope. The effect requires photon energy above the Si bandgap, saturates with P_AB, persists >300 µs in the dark, and is re-broadened by resonant PLE light on microsecond scales. A multi-center survey (20 bus-waveguide emitters) shows correlated linewidth change and bipolar center shifts. The authors attribute the effect to photo-generated free carriers filling nearby charge traps and support this with a first-order trap-occupancy rate equation plus a Holtsmark-based mapping from filled fraction p to center shift and linewidth (Eqs. 1, 4, 6), globally fitted to the Itokawa dataset.

Significance. Spectral diffusion at the GHz level is a recognized bottleneck for device-integrated T centers relative to their cavity-enhanced radiative linewidth (~MHz). A practical, all-optical route that recovers a large fraction of optical coherence without requiring p-i-n electrodes is directly useful for single-shot spin readout, indistinguishable photon generation, and spin–photon networking protocols in silicon. The experimental controls (bandgap cutoff, dual λ_AB consistency, antibunching, power- and time-dependent dynamics, multi-emitter survey) are thorough and largely model-independent. The rate-equation framework, while interpretive, organizes the dynamics and bipolar shifts in a falsifiable way and is fitted globally rather than curve-by-curve. If the residual ~360 MHz floor can be pushed toward the thermal/Purcell limits as outlined in the Outlook, the result would materially advance the T-center platform.

major comments (2)
  1. [Section V, Eqs. 4–6; Appendix G–H; Discussion] Sec. V and Appendix G–H: The microscopic unification of bipolar center shifts, Δσ–Δν correlation, and the observed ~1.5 / ~0.7 time-constant ratios rests on approximating stroboscopic sampling of a finite bulk-trap ensemble (~85 traps in a 220 nm cube at ρ~8×10^15 cm^{-3}) by the ideal 3D Holtsmark law σ∝ρ^{2/3}, while treating surface (2D) traps as sub-dominant and collapsing the Stark response to a scalar |µ+αE_0|. The authors correctly note that ideal Holtsmark assumes large-N, ⟨F⟩=0 conditions that their waveguide geometry violates (they need F≠0 to allow red shifts), and that surface dominance would force identical linewidth and center-shift time constants, contrary to Fig. 3. Fig. 4 also contains outliers with near-zero narrowing but finite shift (or vice versa) that the scalar model cannot explain. The empirical narrowing and free-carrier mechanism do not depend on these assumptio
  2. [Section VI; Abstract; Outlook] Sec. VI: Under far-saturated P_AB the residual linewidth is σ_min^sat ~360 MHz, still ~3× the thermal floor at 3.6 K (~120 MHz) and ~50× the best Purcell-enhanced radiative linewidth reported in Appendix A (7.5 MHz). Heating is convincingly ruled out. The text attributes the floor to incomplete trap filling (p_ss≈0.954) plus whatever remains after Holtsmark suppression, and projects sub-100 MHz via lower T, gentler formation, passivation, and |µ+αE_0| nulling. For the “major roadblock cleared” framing in the Abstract and Outlook to hold for networking applications, the manuscript should quantify more sharply how much of the residual is expected to be removable by each proposed step, and whether any irreducible contribution (e.g., residual spectral diffusion under resonant drive, or homogeneous dephasing reported in related device work) is already visible in the saturated spectra.
minor comments (6)
  1. [Figure 2(f)] Fig. 2(f): The λ_AB sweep is decisive for the free-carrier claim. Adding the corresponding center-shift data (or a pointer that it tracks the linewidth change) in the main figure or caption would strengthen the panel without expanding the text.
  2. [Figure 4; Appendix I; Discussion] Fig. 4 / Appendix I: State explicitly the selection criteria for the 20 surveyed centers (e.g., exclusion of very broad initial linewidths, polarization coupling bias) already alluded to in the Discussion, so readers can judge representativeness.
  3. [Table I; Appendix G] Table I and Eq. (G3): The Auger-corrected P_eff_AB and c_aug are reasonable but introduced with limited independent constraint. A brief note on whether c_aug is consistent with known cryogenic Auger coefficients in SOI, or whether setting c_aug=0 still yields an acceptable global fit, would help assess necessity of that parameter.
  4. [Figure 1 caption] Notation: f_0 = 226130.674 GHz is given to 1 MHz; clarify whether this is a wavemeter absolute calibration or an arbitrary offset zero for the paper.
  5. [Section headings; Appendix G] Typos / formatting: “SP A TIALL Y-RESOL VED”, “EXCIT A TION”, “CA VITY-ENHANCED” etc. in section headings appear to be PDF hyphenation artifacts; clean for the journal version. “Meitner” in “Auger-Meitner” is nonstandard in this community (Auger is usual).
  6. [Appendix A; Section VI] Appendix A: The Purcell factor F_p=43.3 and Γ_cav/2π=7.5 MHz for “Earth” are useful benchmarks; cross-reference them explicitly when discussing the gap between σ_min^sat and the radiative limit in Sec. VI.

Circularity Check

0 steps flagged

No significant circularity: empirical linewidth narrowing stands independently; the rate-equation/Holtsmark model is ordinary phenomenological fitting, not a self-defining derivation.

full rationale

The central claim—up to ~70% optical linewidth reduction of device-coupled single T centers under above-band excitation, with a sharp cutoff at the Si bandgap, dark persistence >300 µs, and resonant-laser re-broadening—is established by direct PLE measurements (Figs. 2–3) and does not depend on the subsequent model. The rate equation (Eq. 1), Stark response (Eqs. 2–4), and Holtsmark scaling σ∝ρ^{2/3} (Eq. 6, App. H) are standard constructs; seven parameters are globally fitted to Itokawa and used to interpret dynamics and survey trends. That is ordinary phenomenological modeling: the fit is not re-labeled as an independent first-principles prediction, nor is any uniqueness theorem or load-bearing premise imported solely via overlapping-author citation. Self-citations ([10], etc.) support device context and prior linewidths, not the narrowing mechanism. Model limitations (anisotropy neglected, Holtsmark vs finite waveguide, surface traps) are acknowledged by the authors and do not close a definitional loop. No step reduces a claimed prediction to its inputs by construction.

Axiom & Free-Parameter Ledger

8 free parameters · 6 axioms · 2 invented entities

The experimental narrowing claim rests mainly on standard solid-state optics and measured spectra. The mechanistic and quantitative story adds a phenomenological trap-filling rate equation, an effective Auger-corrected power, Holtsmark field statistics for finite bulk traps, and a simplified isotropic Stark response—plus seven globally fitted scalars for Itokawa. No new particles or forces; charge traps and free-carrier neutralization are domain-standard.

free parameters (8)
  • η_fill_AB = (1.33±0.08)×10^{-4} ns^{-1} µW^{-1}
    Net above-band trap-filling rate coefficient; linear in effective power; set by global fit to Itokawa dynamics and power curves.
  • Γ_fill_PLE = (3.53±1.59)×10^{-6} ns^{-1}
    Resonant-laser-induced trap filling rate at fixed P_PLE; global fit.
  • Γ_detrap_PLE = (1.24±0.06)×10^{-4} ns^{-1}
    Resonant-laser-induced detrapping rate; global fit; dominates resonant undo dynamics.
  • Γ_detrap_dark = (2.10±0.57)×10^{-7} ns^{-1}
    Thermal/dark detrapping rate; global fit; sets ~ms dark stability.
  • C_f = 0.984±0.008 GHz
    Prefactor converting filled-trap fraction change into center-frequency shift; absorbs (µ+αE_0)F.
  • C_L = 0.847±0.014 GHz
    Prefactor converting Holtsmark (1-p)^{2/3} change into FWHM linewidth change.
  • c_aug = 0.0068±0.0013 µW^{-2}
    Auger coefficient in effective above-band power P_eff = P/(1+c_aug P^2)^{1/3}; global fit.
  • Per-center E_0 and F (and p_0)
    Built-in field and net trap-field vector differ by emitter location/orientation; used to rationalize bipolar shifts and non-universal Δσ–Δν slopes across the 20-center survey without being individually tabulated.
axioms (6)
  • domain assumption Photo-generated free carriers from above-gap light fill and neutralize local charge traps, reducing electric-field noise on the T center.
    Core mechanism stated in Abstract/Introduction and tested by λ_AB sweep across E_g (Fig. 2f); standard in cited QD/defect literature.
  • domain assumption T-center ZPL responds via DC Stark effect ν=ν_0+µE+(1/2)EαE^T with literature µ≈0.79 D and α≈−12.7 GHz/(V/µm)^2, anisotropy neglected.
    Eq. 2 and App. G; values from Clear et al. and Alaerts et al.; isotropy is an explicit simplification.
  • ad hoc to paper Filled-trap fraction p obeys a first-order rate equation with AB filling, PLE fill/detrap, and dark detrap terms (Eq. 1).
    Phenomenological model introduced in Sec. V; not derived from microscopic trap cross-sections.
  • domain assumption Stroboscopic trap configurations produce Holtsmark-distributed fields so FWHM scales as unfilled density to the 2/3 power in 3D.
    App. H; classical Holtsmark; applied despite finite N_t~85 and waveguide boundaries that allow F≠0.
  • ad hoc to paper Quadratic Stark and higher field-moment terms are negligible compared with the linear term under experimental E_0 and ω.
    App. G order-of-magnitude estimates used to drop terms in Δν and σ; needed for simple C_f, C_L forms.
  • domain assumption Shockley-Read-Hall and Auger dominate free-carrier decay; silicon PL recombination neglected; effective power form Eq. G3.
    App. G; standard semiconductor kinetics with one fitted Auger parameter.
invented entities (2)
  • Auger-corrected effective above-band power P_eff_AB no independent evidence
    purpose: Compress first- and third-order carrier decay into a single drive term for the trap-filling rate.
    Defined in App. G as P/(1+c_aug P^2)^{1/3}; bookkeeping device, not a new physical field.
  • Composite coefficients C_f and C_L no independent evidence
    purpose: Map trap occupancy p to observable center shift and linewidth change without resolving full vector trap geometry.
    Introduced in Eqs. 4–6 as fit parameters absorbing µ, α, E_0, F, and Holtsmark scale.

pith-pipeline@v1.2.0-daily-grok45 · 26519 in / 4559 out tokens · 93453 ms · 2026-07-31T05:53:35.808382+00:00 · methodology

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read the original abstract

Single T centers in silicon have emerged as promising optically active spins for quantum networking applications. One of the major obstacles to advancing the system is their broad optical linewidth due to spectral diffusion, which is two orders of magnitude larger than their cavity-enhanced radiative linewidth. We tackle this issue by utilizing above-band optical excitation delivered via a laser scanning microscope to device-coupled single T centers, achieving up to 70% optical linewidth reduction. We attribute the linewidth narrowing effect to the filling of nearby charge traps by photo-generated free carriers. We analyze charge stabilization dynamics by exploiting pulsed above-band excitation and develop a rate equation model to describe the dynamics and to explain the observed linewidth narrowing and center shift. This work provides an effective pathway to control and reduce the optical linewidth for single T centers, clearing one of the major roadblocks to advance the single T center spin platform for quantum information and networking applications.

Figures

Figures reproduced from arXiv: 2607.28485 by Adam Johnston, Shengbin Yan, Songtao Chen, Ulises Felix-Rendon, Yu-En Wong.

Figure 1
Figure 1. Figure 1: FIG. 1 [PITH_FULL_IMAGE:figures/full_fig_p002_1.png] view at source ↗
Figure 2
Figure 2. Figure 2: FIG. 2 [PITH_FULL_IMAGE:figures/full_fig_p003_2.png] view at source ↗
Figure 3
Figure 3. Figure 3: FIG. 3 [PITH_FULL_IMAGE:figures/full_fig_p004_3.png] view at source ↗
Figure 4
Figure 4. Figure 4: FIG. 4 [PITH_FULL_IMAGE:figures/full_fig_p005_4.png] view at source ↗
Figure 5
Figure 5. Figure 5: FIG. 5 [PITH_FULL_IMAGE:figures/full_fig_p007_5.png] view at source ↗
Figure 6
Figure 6. Figure 6: FIG. 6 [PITH_FULL_IMAGE:figures/full_fig_p008_6.png] view at source ↗
Figure 7
Figure 7. Figure 7: FIG. 7 [PITH_FULL_IMAGE:figures/full_fig_p008_7.png] view at source ↗
Figure 8
Figure 8. Figure 8: FIG. 8 [PITH_FULL_IMAGE:figures/full_fig_p009_8.png] view at source ↗
Figure 10
Figure 10. Figure 10: FIG. 10 [PITH_FULL_IMAGE:figures/full_fig_p010_10.png] view at source ↗
Figure 9
Figure 9. Figure 9: FIG. 9 [PITH_FULL_IMAGE:figures/full_fig_p010_9.png] view at source ↗
Figure 11
Figure 11. Figure 11: shows the global fitting based on the model, which perfectly fit experimental results. A least-squares solver is used to carry out the parameter optimization [50]. We see no dependence of the solution on our initial guess for the parameters. Next, we provide details on how we derive the equa￾tions for center shift and linewidth narrowing. Substitut￾ing the E (Eq. 3) into the Stark shift equation (Eq. 2), … view at source ↗
Figure 12
Figure 12. Figure 12: FIG. 12 [PITH_FULL_IMAGE:figures/full_fig_p012_12.png] view at source ↗
Figure 13
Figure 13. Figure 13: FIG. 13 [PITH_FULL_IMAGE:figures/full_fig_p013_13.png] view at source ↗

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Reference graph

Works this paper leans on

52 extracted references · 3 linked inside Pith

  1. [1]

    D. D. Awschalom, R. Hanson, J. Wrachtrup, and B. B. Zhou, Quantum technologies with optically interfaced solid-state spins, Nat. Photon.12, 516 (2018)

    2018

  2. [2]

    Briegel, W

    H.-J. Briegel, W. D¨ ur, J. I. Cirac, and P. Zoller, Quantum repeaters: the role of imperfect local operations in quan- tum communication, Phys. Rev. Lett.81, 5932 (1998)

    1998

  3. [3]

    Awschalom, K

    D. Awschalom, K. K. Berggren, H. Bernien, S. Bhave, L. D. Carr, P. Davids, S. E. Economou, D. Englund, A. Faraon, M. Fejer,et al., Development of quantum in- terconnects (quics) for next-generation information tech- nologies, PRX Quantum2, 017002 (2021)

    2021

  4. [4]

    Khoury and M

    M. Khoury and M. Abbarchi, A bright future for silicon in quantum technologies, J. Appl. Phys131(2022)

    2022

  5. [5]

    Sandholzer, I

    K. Sandholzer, I. Berkman, P. De´ ak, C. Errando- Herranz, P.-P. Filippatos, A. Gali, A. Gritsch, and A. Reiserer, Single-photon emitters and spin-photon interfaces in silicon, arXiv preprint arXiv:2603.02201 (2026)

    Pith/arXiv arXiv 2026

  6. [6]

    semiconductor vacuum

    M. Steger, K. Saeedi, M. Thewalt, J. Morton, H. Rie- mann, N. Abrosimov, P. Becker, and H.-J. Pohl, Quan- tum information storage for over 180 s using donor spins in a 28Si “semiconductor vacuum”, Science336, 1280 (2012)

    2012

  7. [7]

    Bergeron, C

    L. Bergeron, C. Chartrand, A. Kurkjian, K. Morse, H. Riemann, N. Abrosimov, P. Becker, H.-J. Pohl, M. Thewalt, and S. Simmons, Silicon-integrated telecom- munications photon-spin interface, PRX Quantum1, 020301 (2020)

    2020

  8. [8]

    D. B. Higginbottom, A. T. Kurkjian, C. Chartrand, M. Kazemi, N. A. Brunelle, E. R. MacQuarrie, J. R. Klein, N. R. Lee-Hone, J. Stacho, and M. Ruether, Opti- cal observation of single spins in silicon, Nature607, 266 (2022)

    2022

  9. [9]

    Islam, C.-M

    F. Islam, C.-M. Lee, S. Harper, M. H. Rahaman, Y. Zhao, N. K. Vij, and E. Waks, Cavity-enhanced emission from a silicon T center, Nano Lett.24, 319 (2023)

    2023

  10. [10]

    Johnston, U

    A. Johnston, U. Felix-Rendon, Y.-E. Wong, and S. Chen, Cavity-coupled telecom atomic source in silicon, Nat. Commun.15, 2350 (2024)

    2024

  11. [11]

    H. Song, X. Zhang, L. Komza, N. Fiaschi, Y. Xiong, Y. Zhi, S. Dhuey, A. Schwartzberg, T. Schenkel, G. Hau- tier,et al., Entanglement of a nuclear spin qubit register in silicon photonics, Nat. Nanotechnol.21, 53 (2026)

    2026

  12. [12]

    Afzal, M

    F. Afzal, M. Akhlaghi, S. J. Beale, O. Bedroya, K. Bell, L. Bergeron, K. Bonsma-Fisher, P. Bychkova, Z. M. Chaisson, and C. Chartrand, Distributed quantum computing in silicon, arXiv preprint arXiv:2406.01704 (2024)

    Pith/arXiv arXiv 2024

  13. [13]

    Wolfowicz, F

    G. Wolfowicz, F. J. Heremans, C. P. Anderson, S. Kanai, H. Seo, A. Gali, G. Galli, and D. D. Awschalom, Quan- tum guidelines for solid-state spin defects, Nat. Rev. Mater.6, 906 (2021)

    2021

  14. [14]

    Tamarat, T

    P. Tamarat, T. Gaebel, J. Rabeau, M. Khan, A. Green- tree, H. Wilson, L. Hollenberg, S. Prawer, P. Hemmer, F. Jelezko,et al., Stark shift control of single optical cen- ters in diamond, Phys. Rev. Lett.97, 083002 (2006)

    2006

  15. [15]

    J. A. Zuber, M. Li, M. l. Grimau Puigibert, J. Happacher, P. Reiser, B. J. Shields, and P. Maletinsky, Shallow silicon vacancy centers with lifetime-limited optical linewidths in diamond nanostructures, Nano Lett.23, 10901 (2023)

    2023

  16. [16]

    M. K. Bhaskar, D. D. Sukachev, A. Sipahigil, R. E. Evans, M. J. Burek, C. T. Nguyen, L. J. Rogers, P. Siyu- shev, M. H. Metsch, H. Park,et al., Quantum non- linear optics with a germanium-vacancy color center in a nanoscale diamond waveguide, Phys. Rev. Lett.118, 223603 (2017)

    2017

  17. [17]

    M. E. Trusheim, B. Pingault, N. H. Wan, M. G¨ undo˘ gan, L. De Santis, R. Debroux, D. Gangloff, C. Purser, K. C. Chen, M. Walsh,et al., Transform-limited photons from a coherent tin-vacancy spin in diamond, Phys. Rev. Lett. 124, 023602 (2020)

    2020

  18. [18]

    P. Wang, L. Kazak, K. Senkalla, P. Siyushev, R. Abe, T. Taniguchi, S. Onoda, H. Kato, T. Makino, M. Hatano, et al., Transform-limited photon emission from a lead- vacancy center in diamond above 10 K, Phys. Rev. Lett. 132, 073601 (2024)

    2024

  19. [19]

    Ourari, L

    S. Ourari, L. Dusanowski, S. P. Horvath, M. T. Uysal, C. M. Phenicie, P. Stevenson, M. Raha, S. Chen, R. J. Cava, and N. P. de Leon, Indistinguishable telecom band photons from a single Er ion in the solid state, Nature 620, 977 (2023)

    2023

  20. [20]

    C. P. Anderson, A. Bourassa, K. C. Miao, G. Wolfow- icz, P. J. Mintun, A. L. Crook, H. Abe, J. Ul Hassan, N. T. Son, T. Ohshima, and D. Awschalow, Electrical and optical control of single spins integrated in scalable semiconductor devices, Science366, 1225 (2019)

    2019

  21. [21]

    L. Zhai, M. C. L¨ obl, G. N. Nguyen, J. Ritzmann, A. Javadi, C. Spinnler, A. D. Wieck, A. Ludwig, and R. J. Warburton, Low-noise GaAs quantum dots for quantum photonics, Nat. Commun.11, 4745 (2020)

    2020

  22. [22]

    Majumdar, E

    A. Majumdar, E. D. Kim, and J. Vuˇ ckovi´ c, Effect of pho- togenerated carriers on the spectral diffusion of a quan- tum dot coupled to a photonic crystal cavity, Phys. Rev. B84, 195304 (2011)

    2011

  23. [23]

    Alizadehherfati, Y

    A. Alizadehherfati, Y. Jiang, N. v. d. Driesch, C. Fal- ter, Y. Kutovyi, J. R. Basani, A. Boreiri, A. Pawlis, and E. Waks, Electrical control of optically active single spin qubits in znse, arXiv preprint arXiv:2512.21462 (2025)

    arXiv 2025

  24. [24]

    DeAbreu, C

    A. DeAbreu, C. Bowness, A. Alizadeh, C. Chartrand, N. Brunelle, E. MacQuarrie, N. Lee-Hone, M. Ruether, M. Kazemi, and A. Kurkjian, Waveguide-integrated sili- con T centres, Opt. Express31, 15045 (2023)

    2023

  25. [25]

    Komza, X

    L. Komza, X. Zhang, H. Song, Y.-L. Tang, X. Wei, and A. Sipahigil, Multiplexed color centers in a silicon pho- tonic cavity array, Optica12, 1400 (2025)

    2025

  26. [26]

    Zhang, N

    X. Zhang, N. Fiaschi, L. Komza, H. Song, T. Schenkel, and A. Sipahigil, Laser-induced spectral diffusion of T centers in silicon nanophotonic devices, PRX Quantum 6, 030351 (2025)

    2025

  27. [27]

    Bowness, S

    C. Bowness, S. A. Meynell, M. Dobinson, C. Clear, K. Jooya, N. Brunelle, M. Keshavarz, K. Boos, M. Gas- coine, S. Taherizadegan,et al., Laser-induced spectral diffusion and excited-state mixing of silicon T centers, PRX Quantum6, 030350 (2025)

    2025

  28. [28]

    Dobinson, C

    M. Dobinson, C. Bowness, S. A. Meynell, C. Chartrand, E. Hoffmann, M. Gascoine, I. MacGilp, F. Afzal, C. Dan- gel, N. Jahed,et al., Electrically triggered spin–photon devices in silicon, Nat. Photon.19, 1132 (2025)

    2025

  29. [29]

    A. M. Day, C. Zhang, C. Jin, H. Song, M. Sutula, D. D. Sukachev, A. Sipahigil, M. K. Bhaskar, and E. L. Hu, Probing negative differential resistance in silicon with a 15 PIN diode-integrated T center ensemble, arXiv preprint arXiv:2501.11888 (2025)

    arXiv 2025

  30. [30]

    Dobinson, F

    M. Dobinson, F. Hufnagel, S. A. Meynell, C. Bowness, M. Gascoine, W. Wasserman, P. K. Shandilya, C. Dan- gel, M. L. Thewalt, S. Simmons,et al., Spectral tuning of single T centres by the Stark effect, arXiv preprint arXiv:2604.25170 (2026)

    Pith/arXiv arXiv 2026

  31. [31]

    Clear, S

    C. Clear, S. Hosseini, A. AlizadehKhaledi, N. Brunelle, A. Woolverton, J. Kanaganayagam, M. Kazemi, C. Char- trand, M. Keshavarz, Y. Xiong,et al., Optical-transition parameters of the silicon T center, Phys. Rev. Appl.22, 064014 (2024)

    2024

  32. [32]

    Alaerts, Y

    L. Alaerts, Y. Xiong, S. M. Griffin, and G. Hautier, First- principles computations of the Stark shift of a defect- bound exciton: The case of the T center in silicon, Phys. Rev. B112, 125114 (2025)

    2025

  33. [33]

    Sun and J

    S. Sun and J. D. Plummer, Electron mobility in inver- sion and accumulation layers on thermally oxidized sili- con surfaces, IEEE J. Solid-State Circuits15, 562 (1980)

    1980

  34. [34]

    Sharma, M

    R. Sharma, M. W. Puckett, H.-H. Lin, F. Vallini, and Y. Fainman, Characterizing the effects of free carriers in fully etched, dielectric-clad silicon waveguides, Appl. Phys. Lett.106(2015)

    2015

  35. [35]

    Holtsmark, ¨Uber die verbreiterung von spektrallinien, Ann

    J. Holtsmark, ¨Uber die verbreiterung von spektrallinien, Ann. Phys.363, 577 (1919)

    1919

  36. [36]

    Chandrasekhar, Stochastic problems in physics and astronomy, Rev

    S. Chandrasekhar, Stochastic problems in physics and astronomy, Rev. Mod. Phys.15, 1 (1943)

    1943

  37. [37]

    Samama and E

    A. Samama and E. Barkai, Statistics of long-range force fields in random environments: Beyond holtsmark, Phys. Rev. E108, 044116 (2023)

    2023

  38. [38]

    Troxell, Ion-implantation associated defect production in silicon, Solid-State Electron.26, 539 (1983)

    J. Troxell, Ion-implantation associated defect production in silicon, Solid-State Electron.26, 539 (1983)

    1983

  39. [39]

    A. G. Aberle, Surface passivation of crystalline silicon solar cells: a review, Prog. Photovolt.: Res. Appl.8, 473 (2000)

    2000

  40. [40]

    Safonov, E

    A. Safonov, E. Lightowlers, G. Davies, P. Leary, R. Jones, and S. ¨Oberg, Interstitial-carbon hydrogen interaction in silicon, Phys. Rev. Lett.77, 4812 (1996)

    1996

  41. [41]

    Minaev and A

    N. Minaev and A. Mudryi, Thermally-induced defects in silicon containing oxygen and carbon, Phys. Status Solidi A68, 561 (1981)

    1981

  42. [42]

    Lightowlers, R

    E. Lightowlers, R. Newman, and J. Tucker, Hydrogen- related luminescence centres in thermally treated Czochralski silicon, Semicond. Sci. Technol.9, 1370 (1994)

    1994

  43. [43]

    Wong and S

    Y.-E. Wong and S. Chen, Cavity-assisted single-shot T center spin readout, arXiv preprint arXiv:2510.26797 (2025)

    arXiv 2025

  44. [44]

    Nguyen, D

    C. Nguyen, D. Sukachev, M. Bhaskar, B. Machielse, D. Levonian, E. Knall, P. Stroganov, C. Chia, M. Burek, and R. Riedinger, An integrated nanophotonic quantum register based on silicon-vacancy spins in diamond, Phys. Rev. B100, 165428 (2019)

    2019

  45. [45]

    C. M. Knaut, A. Suleymanzade, Y.-C. Wei, D. R. As- sumpcao, P.-J. Stas, Y. Q. Huan, B. Machielse, E. N. Knall, M. Sutula, G. Baranes,et al., Entanglement of nanophotonic quantum memory nodes in a telecom net- work, Nature629, 573 (2024)

    2024

  46. [46]

    H. K. Beukers, M. Pasini, H. Choi, D. Englund, R. Han- son, and J. Borregaard, Remote-entanglement proto- cols for stationary qubits with photonic interfaces, PRX Quantum5, 010202 (2024)

    2024

  47. [47]

    Y. Chai, D. Ghoshal, N. P. Tiwari, A. Kolar, B. Pin- gault, H. Bernien, and T. Zhong, Direct telecom network between atomic and solid-state quantum nodes, arXiv preprint arXiv:2602.02653 (2026)

    arXiv 2026

  48. [48]

    Y. Xu, Y. Li, R. K. Lee, and A. Yariv, Scattering-theory analysis of waveguide-resonator coupling, Phys. Rev. E 62, 7389 (2000)

    2000

  49. [49]

    Wilhelm, E

    S. Wilhelm, E. Simb¨ urger, and A. Bergter,Basics of Con- focal Laser Scanning Microscopy, Tech. Rep. White Pa- per EN 40 010 147 (Carl Zeiss Microscopy GmbH, Jena, Germany, 2024)

    2024

  50. [50]

    Virtanen, R

    P. Virtanen, R. Gommers, T. E. Oliphant, M. Haber- land, T. Reddy, D. Cournapeau, E. Burovski, P. Peter- son, W. Weckesser, J. Bright,et al., Scipy 1.0: fundamen- tal algorithms for scientific computing in python, Nat. Methods17, 261 (2020)

    2020

  51. [51]

    Fujimoto, Broadening of spectral lines, inPlasma Spectroscopy(Oxford University Press, 2004) pp

    T. Fujimoto, Broadening of spectral lines, inPlasma Spectroscopy(Oxford University Press, 2004) pp. 213– 235

    2004

  52. [1310]

    pre-step

    before the objective to enable reflection signal for the PD during optical alignment. Another optical path for the resonant laser to reach the nanophotonic devices is through an angle-polished fiber coupled to the GC. We can switch between the two paths using a MEMS switch (Agiltron FFSM-226C01333). The T-center flu- orescence emission signal is collected...