Interface Studies of Molecular Beam Epitaxy (MBE) Grown ZnSe-GaAs Heterovalent Structures

Comprehensive investigations on ZnSe/GaAs and GaAs/ZnSe interfaces were carried out by photoluminescence (PL) and transmission electron microscopy (TEM), as a part of realizing high quality ZnSe-GaAs (100) hetero-valent structures (HS). The nature of ZnSe/GaAs interface under different surface terminations of GaAs was examined. The ZnSe/Ga-terminated GaAs was found to have a superior optical and microstructural quality, with a chemical interface consisting of a mixture of both the GaAs and ZnSe atomic constituents. For GaAs/ZnSe interface studies, a low-temperature migration enhanced epitaxy (LT-MEE) growth technique was used to grow GaAs layers under the conditions compatible to the growth of ZnSe. Both Ga and As-initialized LT-MEE GaAs/ZnSe interfaces were investigated. A defective transition layer was observed along the As-initialized GaAs/ZnSe interface, which may be attributed to the formation Zn$_3$As$_2$ compound. The correlation between the observed optical as well as structural properties of both the (GaAs/ZnSe and ZnSe/GaAs) interfaces and the growth conditions used in this study are discussed in detail. This study could provide a valuable insight on the interface nature of ZnSe-GaAs HS.