Typed states for the displayed outbound observations.
Source: paper_references, paper_reference_links
Paper Citation Record · LEDGER
Cryogenic Behavior of High-Permittivity Gate Dielectrics: The Impact of the Atomic Layer Deposition Temperature and the Lithographic Patterning Method
As of 13 August 2026, this Paper Citation Record lists 0 of 0 outbound references and 2 inbound Pith citation observations for arXiv:2407.04501.
A citation records a reference. It does not transfer a finding from one paper to another.
Coverage vector
One-hop event checks from named stored sources.
Source: scholarly_work_events, retraction_status_cache, observed 2026-08-12T06:34:41.77262+00:00
Pith citing papers itemized under the disclosed page cap.
Source: paper_references, paper_reference_links, observed 2026-08-11T12:51:03.173131Z
A source-named dated measurement, never combined with another source.
Source: arxiv_reference, observed 2026-05-23T17:43:17.790420Z
Reference resolution
0 of 0 outbound references displayed
- verified exact0
- verified fuzzy0
- unresolved0
- parse uncertain0
- malformed identifier0
- metadata mismatch0
External citation measurements
No source-named external measurement is stored.
Outbound references
No outbound reference observations are available for this paper version.
Pith citing papers
Observation 0b1dd9c1-aec4-4a2b-9720-25ff51d490d9 · inbound
Impact of surface treatments on the transport properties of germanium 2DHGs cites this paper.
Impact of surface treatments on the transport properties of germanium 2DHGs Cryogenic Behavior of High-Permittivity Gate Dielectrics: The Impact of the Atomic Layer Deposition Temperature and the Lithographic Patterning Method
Reference 35
- Resolution
- verified exact
- arxiv_id, observed 2026-05-23T17:43:17.793881Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.
Observation 1be43704-e38d-4b5e-9a7b-f4cf981ddf8e · inbound
Josephson Field Effect Transistors with InAs on Insulator and High Permittivity Gate Dielectrics cites this paper.
Josephson Field Effect Transistors with InAs on Insulator and High Permittivity Gate Dielectrics Cryogenic Behavior of High-Permittivity Gate Dielectrics: The Impact of the Atomic Layer Deposition Temperature and the Lithographic Patterning Method
Reference 592
- Resolution
- unresolved
- no resolver link, observed 2026-08-11T12:51:03.173131Z
Source-reported events for the cited work
Unavailable: canonical work link unavailable.