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Dual epitaxial telecom spin-photon interfaces with correlated long-lived coherence
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abstract
Optically active solid-state spin qubits thrive as an appealing technology for quantum interconnect and quantum networking, owing to their atomic size, scalable creation, long-lived coherence, and ability to coherently interface with flying qubits. Trivalent erbium dopants in particular emerge as a compelling candidate with their telecom C band emission and shielded 4f intra-shell spin-optical transitions. However, prevailing top-down architecture for rare-earth qubits and devices has not allowed simultaneous long optical and spin coherence necessary for long-distance quantum networks. Here we demonstrate dual erbium telecom spin-photon interfaces in an epitaxial thin-film platform via wafer-scale bottom-up synthesis. Harnessing precise controls over the matrix purity, dopant placement, and symmetry unique to this platform, we simultaneously achieve millisecond erbium spin coherence time and $<$3 kilohertz optical dephasing rate in an inversion-symmetry protected site and realize both optical and microwave control in a fiber-integrated package for rapid scaling up. These results demonstrate a significant prospect for high-quality rare-earth qubits and quantum memories assembled using a bottom-up method and pave the way for the large-scale development of quantum light-matter interfaces for telecommunication quantum networks.
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Erbium doped yttrium oxide thin films grown by chemical vapour deposition for quantum technologies
CVD-grown Er:Y2O3 films show substrate-dependent texture, including epitaxy on YSZ and 99% (111) texture on an MBE oxide/Si template, with telecom inhomogeneous linewidths of 9 to 14 GHz.
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