Radiation hardness study using SiPMs with single-cell readout

A. Kaminsky; A. Stifutkin; E. Garutti; E. Popova; J. Schwandt; O. Bychkova; P. Parygin; S. Martens

REVIEW

Radiation hardness study using SiPMs with single-cell readout

Not yet reviewed by Pith; the record is open.

Re-run · record.json Download PDF Read on arXiv ↗

This paper has not been read by Pith yet. Machine review is queued; the pith claim, tier, and objections will appear here once it completes.

SPECIMEN: schema-true, not a live event

T0 review · schema-true

One-sentence machine reading of the paper's core claim.

pith:XXXXXXXX · record.json · timestamp

arxiv 2111.00483 v1 pith:WZBIFGHW submitted 2021-10-31 physics.ins-det hep-ex

Radiation hardness study using SiPMs with single-cell readout

E. Garutti , E. Popova , P. Parygin , O. Bychkova , A. Kaminsky , S. Martens , J. Schwandt , A. Stifutkin This is my paper

classification physics.ins-det hep-ex

keywords gainfluenceradiationsingle-cellsipmsturn-offvoltageapprox

verification ladder T0 review T1 audit T2 compute T3 formal T4 reserved

0 comments

read the original abstract

A dedicated single-cell SiPM structure is designed and measured to investigate the radiation damage effects on the gain and turn-off voltage of SiPMs exposed to a reactor neutron fluence up to $\Phi$ = 5e13 cm$^{-2}$. The cell has a pitch of 15 $\mu$m. The fluence dependence of gain and turn-off voltage are reported. A reduction of the gain by 19% and an increase of $V_{off}$ by $\approx$0.5 V is observed after $\Phi$ = 5e13 cm$^{-2}$.

Radiation hardness study using SiPMs with single-cell readout

discussion (0)