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Paper Citation Record · LEDGER

First-principles Quantum Insights into Bandgap Engineering, Valley Quantum Hall Effect, and Nonlinear Optical Response of Ge-Doped Graphene for Potential Optoelectronic Applications

As of 11 August 2026, this Paper Citation Record lists 29 of 29 outbound references and 1 inbound Pith citation observation for arXiv:2506.07745.

A citation records a reference. It does not transfer a finding from one paper to another.

pith.paper-citation-record.v1
2506.07745 v2

Coverage vector

measured 29 of 29 reference resolution

Typed states for the displayed outbound observations.

Source: paper_references, paper_reference_links, observed 2026-08-07T05:32:35.581055Z

measured 30 of 30 standing notices

One-hop event checks from named stored sources.

Source: scholarly_work_events, retraction_status_cache, observed 2026-08-11T06:34:44.6726+00:00

measured 1 of 1 inbound itemization

Pith citing papers itemized under the disclosed page cap.

Source: paper_references, paper_reference_links, observed 2026-08-03T19:22:31.507261Z

measured 0 of 1 external citation measurements

A source-named dated measurement, never combined with another source.

Source: cited_works

Reference resolution

29 of 29 outbound references displayed

  • verified exact0
  • verified fuzzy25
  • unresolved4
  • parse uncertain0
  • malformed identifier0
  • metadata mismatch0

External citation measurements

No source-named external measurement is stored.

Outbound references

Reference 1

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Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-11T06:34:44.6726+00:00.

source=pdf_text observed=2026-08-07T05:32:35.501415Z digest=sha256:506a6dabcfe0c3da914ee174d6bdf93617dc40dafb0b74026f4d2e05026800c7

Observation 2bc36347-7099-4863-947b-a7c73232e635 · outbound

This paper cites What are the key degrees of freedom for the next generation of quantum functional materials? Next Materials 1, 100018 (2023) 1-12.

First-principles Quantum Insights into Bandgap Engineering, Valley Quantum Hall Effect, and Nonlinear Optical Response of Ge-Doped Graphene for Potential Optoelectronic Applications What are the key degrees of freedom for the next generation of quantum functional materials? Next Materials 1, 100018 (2023) 1-12

Reference 2

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No event found in the named queried sources as of 2026-08-11T06:34:44.6726+00:00.

source=pdf_text observed=2026-08-07T05:32:35.504939Z digest=sha256:c00a93d609101881ea5fb98601413783973a5592381b09f29ee07cb1b36cfe6f

Observation 37d55533-3a7f-4314-b2cb-58b42ecf43e4 · outbound

This paper cites an unresolved cited work.

First-principles Quantum Insights into Bandgap Engineering, Valley Quantum Hall Effect, and Nonlinear Optical Response of Ge-Doped Graphene for Potential Optoelectronic Applications Unresolved cited work

Reference 3

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No event found in the named queried sources as of 2026-08-11T06:34:44.6726+00:00.

source=pdf_text observed=2026-08-07T05:32:35.508630Z digest=sha256:09bc9890540d3656cc5e51b3ccd998812a57f29ed643b63fc21119e733eab3da

Observation b1eb3eec-7eaf-48a9-aa14-8d7db7be8880 · outbound

This paper cites The reported results were calculated by employing the first -principle DFT methodology based on GGA-PBE potential and hybrid HSE06 functional with and without spin -orbit coupling.

First-principles Quantum Insights into Bandgap Engineering, Valley Quantum Hall Effect, and Nonlinear Optical Response of Ge-Doped Graphene for Potential Optoelectronic Applications The reported results were calculated by employing the first -principle DFT methodology based on GGA-PBE potential and hybrid HSE06 functional with and without spin -orbit coupling

Reference 4

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Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-11T06:34:44.6726+00:00.

source=pdf_text observed=2026-08-07T05:32:35.498349Z digest=sha256:2dac4ae935a457afcf803f84a5f3481bda5c84b7a1ae87edd9a7ab47be78a1bb

Observation 7d465170-56c9-41d6-8545-dc4651e8967f · outbound

This paper cites However, these results confirm that the doping of Ge in graphene facilitates to open a considerable bandgap.

First-principles Quantum Insights into Bandgap Engineering, Valley Quantum Hall Effect, and Nonlinear Optical Response of Ge-Doped Graphene for Potential Optoelectronic Applications However, these results confirm that the doping of Ge in graphene facilitates to open a considerable bandgap

Reference 5

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Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-11T06:34:44.6726+00:00.

source=pdf_text observed=2026-08-07T05:32:35.494318Z digest=sha256:e670bfb67cae7aad805656143ab26d40f602064000b567dbe74b102e930da073

Observation 4a9bc94e-e158-4e1f-a3f6-bf41d253aff8 · outbound

This paper cites Nat Phys 3:172–175.

First-principles Quantum Insights into Bandgap Engineering, Valley Quantum Hall Effect, and Nonlinear Optical Response of Ge-Doped Graphene for Potential Optoelectronic Applications Nat Phys 3:172–175

Reference 6

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source=pdf_text observed=2026-08-07T05:32:35.512073Z digest=sha256:b5ca761b0dff735754644129479e98c68e82410efb75ac18f0f13bb00fc86efb

Observation db8c9dca-4284-4bb5-bfdf-239bceb870b0 · outbound

This paper cites Phys Rev Lett 99(23):236809.

First-principles Quantum Insights into Bandgap Engineering, Valley Quantum Hall Effect, and Nonlinear Optical Response of Ge-Doped Graphene for Potential Optoelectronic Applications Phys Rev Lett 99(23):236809

Reference 7

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Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-11T06:34:44.6726+00:00.

source=pdf_text observed=2026-08-07T05:32:35.515535Z digest=sha256:28843be07a50f8c64acc8dd4ea6c92d8e11e6c5320f28d30b6d64208bb530bef

Observation d862ed64-94e5-4528-b0e3-8607509180e0 · outbound

This paper cites Phys Rev B 77:235406.

First-principles Quantum Insights into Bandgap Engineering, Valley Quantum Hall Effect, and Nonlinear Optical Response of Ge-Doped Graphene for Potential Optoelectronic Applications Phys Rev B 77:235406

Reference 8

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source=pdf_text observed=2026-08-07T05:32:35.518695Z digest=sha256:e16ac1b43e52f97eb7ff140551ad2b74af5557cc0574b80e2d448594b8571d20

Observation 0434151a-1d77-49c9-938b-6f539347c300 · outbound

This paper cites (2012) Valley-selective circular dichroism of monolayer molybdenum disulphide.

First-principles Quantum Insights into Bandgap Engineering, Valley Quantum Hall Effect, and Nonlinear Optical Response of Ge-Doped Graphene for Potential Optoelectronic Applications (2012) Valley-selective circular dichroism of monolayer molybdenum disulphide

Reference 9

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source=pdf_text observed=2026-08-07T05:32:35.522080Z digest=sha256:a0e64f5c562795b6c63a411851cf26a6b4256f6916510d93d0fddceb6e3174b7

Observation a2446b76-33ee-459a-9ac3-239f8ad7d8e3 · outbound

This paper cites Phys Rev Lett 108(19): 196802.

First-principles Quantum Insights into Bandgap Engineering, Valley Quantum Hall Effect, and Nonlinear Optical Response of Ge-Doped Graphene for Potential Optoelectronic Applications Phys Rev Lett 108(19): 196802

Reference 10

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No event found in the named queried sources as of 2026-08-11T06:34:44.6726+00:00.

source=pdf_text observed=2026-08-07T05:32:35.525150Z digest=sha256:ecbd4d67b07a1555614b159030a6e223d7311644567e6b18732d11360ae33126

Observation 2fea3ace-eb10-4af0-aba2-b6ce172ee625 · outbound

This paper cites Nat Nanotechnol 7(8):494–498.

First-principles Quantum Insights into Bandgap Engineering, Valley Quantum Hall Effect, and Nonlinear Optical Response of Ge-Doped Graphene for Potential Optoelectronic Applications Nat Nanotechnol 7(8):494–498

Reference 11

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source=pdf_text observed=2026-08-07T05:32:35.528010Z digest=sha256:336e8bd1a9962b7e939704dae111badafaa704146907317dda8d0138caa1e9e6

Observation 3abc5da2-afbb-48c1-a510-18f97e6aac80 · outbound

This paper cites Nat Nanotechnol 7(8):490–493.

First-principles Quantum Insights into Bandgap Engineering, Valley Quantum Hall Effect, and Nonlinear Optical Response of Ge-Doped Graphene for Potential Optoelectronic Applications Nat Nanotechnol 7(8):490–493

Reference 12

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No event found in the named queried sources as of 2026-08-11T06:34:44.6726+00:00.

source=pdf_text observed=2026-08-07T05:32:35.530830Z digest=sha256:8ca32e491992f69ea9b2ce0a065d55001e99ad37849d058d0ca3c7bd51899ce2

Observation 80d26dd6-0acb-475b-ad42-9d693905c047 · outbound

This paper cites Schaibley, Hongyi Yu, Genevieve Clark, Pasqual Rivera, Jason S.

First-principles Quantum Insights into Bandgap Engineering, Valley Quantum Hall Effect, and Nonlinear Optical Response of Ge-Doped Graphene for Potential Optoelectronic Applications Schaibley, Hongyi Yu, Genevieve Clark, Pasqual Rivera, Jason S

Reference 13

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No event found in the named queried sources as of 2026-08-11T06:34:44.6726+00:00.

source=pdf_text observed=2026-08-07T05:32:35.533850Z digest=sha256:1a8e2944b551aba4c6f94557b795f5d98c27617e412462633527d9c377de17c8

Reference 14

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No event found in the named queried sources as of 2026-08-11T06:34:44.6726+00:00.

source=pdf_text observed=2026-08-07T05:32:35.536890Z digest=sha256:ef90f9b5cf5cd77543ca67fd7da9fb79d8f77ab2bd25df8e78d1a4650c6c2c9f

Observation 7a5aa9ed-8108-4286-ae17-0c3598b4cba8 · outbound

This paper cites A potential candidate material for quantum anomalous Hall effect: Heterostructures of ferromagnetic insulator and graphene.

First-principles Quantum Insights into Bandgap Engineering, Valley Quantum Hall Effect, and Nonlinear Optical Response of Ge-Doped Graphene for Potential Optoelectronic Applications A potential candidate material for quantum anomalous Hall effect: Heterostructures of ferromagnetic insulator and graphene

Reference 15

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No event found in the named queried sources as of 2026-08-11T06:34:44.6726+00:00.

source=pdf_text observed=2026-08-07T05:32:35.540121Z digest=sha256:aab391ac6168dcba2f577187549fe9cfa5fca1aaca62ef8e552c54f19a3fdcd7

Observation 240eb089-fd47-4820-9b8c-ff99be220201 · outbound

This paper cites Physical Review Letters 132, (2024)096302.

First-principles Quantum Insights into Bandgap Engineering, Valley Quantum Hall Effect, and Nonlinear Optical Response of Ge-Doped Graphene for Potential Optoelectronic Applications Physical Review Letters 132, (2024)096302

Reference 16

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source=pdf_text observed=2026-08-07T05:32:35.543338Z digest=sha256:5734a1a4b2fc9fd4079a1850923e9144ea9861cdb7413835cd932be58e6b625e

Reference 17

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source=pdf_text observed=2026-08-07T05:32:35.546182Z digest=sha256:cc6eb58f126fc481aed060ec3ea1d0e1199e923fc7e8e79d1fc82714628c4048

Observation 4e7792c9-b5cf-4815-8061-af30009885a4 · outbound

This paper cites an unresolved cited work.

First-principles Quantum Insights into Bandgap Engineering, Valley Quantum Hall Effect, and Nonlinear Optical Response of Ge-Doped Graphene for Potential Optoelectronic Applications Unresolved cited work

Reference 18

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No event found in the named queried sources as of 2026-08-11T06:34:44.6726+00:00.

source=pdf_text observed=2026-08-07T05:32:35.549177Z digest=sha256:2a2fc6ad3b85d96c3a2476e74cd7888f627ed1d1d1829a2581aa9ea93b1d86ab

Observation 5b5397d2-1673-4ad4-af92-8fc6037c1897 · outbound

This paper cites Quantum-Engineered Devices Based on 2D Materials for Next-Generation Information Processing and Storage.

First-principles Quantum Insights into Bandgap Engineering, Valley Quantum Hall Effect, and Nonlinear Optical Response of Ge-Doped Graphene for Potential Optoelectronic Applications Quantum-Engineered Devices Based on 2D Materials for Next-Generation Information Processing and Storage

Reference 19

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source=pdf_text observed=2026-08-07T05:32:35.552011Z digest=sha256:91971b7c5c7704810618122ac7b7a09cbbff0ce60c0d0e92c89f2c8ff15c8e56

Observation 1bdaf660-b7e1-44d7-9b77-34bdab324e4c · outbound

This paper cites Proposal of graphene band-gap enhancement via heterostructure of graphene with boron nitride in vertical stacking scheme.

First-principles Quantum Insights into Bandgap Engineering, Valley Quantum Hall Effect, and Nonlinear Optical Response of Ge-Doped Graphene for Potential Optoelectronic Applications Proposal of graphene band-gap enhancement via heterostructure of graphene with boron nitride in vertical stacking scheme

Reference 20

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source=pdf_text observed=2026-08-07T05:32:35.554908Z digest=sha256:c25a58653ecc3e5d0e8ff7d10fd92d0a24bf85c962e18059480174e371172ad8

Observation fa002b6d-17ca-4259-8346-215cae1f65c0 · outbound

This paper cites an unresolved cited work.

First-principles Quantum Insights into Bandgap Engineering, Valley Quantum Hall Effect, and Nonlinear Optical Response of Ge-Doped Graphene for Potential Optoelectronic Applications Unresolved cited work

Reference 21

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No event found in the named queried sources as of 2026-08-11T06:34:44.6726+00:00.

source=pdf_text observed=2026-08-07T05:32:35.557807Z digest=sha256:d3a9bd2eb064e366fa621585c35ca57e403c77c1d675c32a80923908f0fd1e46

Observation f0d5b6b8-be9a-4091-b461-dc5ef75dfd14 · outbound

This paper cites Valley-dependent electronic transport in a graphene with double magnetic-strained barriers.

First-principles Quantum Insights into Bandgap Engineering, Valley Quantum Hall Effect, and Nonlinear Optical Response of Ge-Doped Graphene for Potential Optoelectronic Applications Valley-dependent electronic transport in a graphene with double magnetic-strained barriers

Reference 22

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source=pdf_text observed=2026-08-07T05:32:35.560667Z digest=sha256:67f181b84f489dfdaf3d768efd5180968ee3e16965947b49862ab529760f42f6

Observation 767d5a83-a282-4438-8286-6f818a88fa88 · outbound

This paper cites Valley-dependent band structure and valley polarization in periodically modulated graphene.

First-principles Quantum Insights into Bandgap Engineering, Valley Quantum Hall Effect, and Nonlinear Optical Response of Ge-Doped Graphene for Potential Optoelectronic Applications Valley-dependent band structure and valley polarization in periodically modulated graphene

Reference 23

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No event found in the named queried sources as of 2026-08-11T06:34:44.6726+00:00.

source=pdf_text observed=2026-08-07T05:32:35.563679Z digest=sha256:6a37e5a414b43f8e791f9f56de9335dbffd8c4eb166c61523a4261861c7a9976

Observation 4b762d25-c46d-48c7-8349-1f83bc3203ea · outbound

This paper cites Giant and Controllable Valley Currents in Graphene by Double Pumped THz Light.

First-principles Quantum Insights into Bandgap Engineering, Valley Quantum Hall Effect, and Nonlinear Optical Response of Ge-Doped Graphene for Potential Optoelectronic Applications Giant and Controllable Valley Currents in Graphene by Double Pumped THz Light

Reference 24

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source=pdf_text observed=2026-08-07T05:32:35.566610Z digest=sha256:86b1c4f310f346959a5e486c0babb1ee34a7d0aa1ad17b3beeea1a15c8433fec

Observation 8d34b912-60c8-4cbb-996d-8b01419172b6 · outbound

This paper cites Advances and Trends in Chemically Doped Graphene.

First-principles Quantum Insights into Bandgap Engineering, Valley Quantum Hall Effect, and Nonlinear Optical Response of Ge-Doped Graphene for Potential Optoelectronic Applications Advances and Trends in Chemically Doped Graphene

Reference 25

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No event found in the named queried sources as of 2026-08-11T06:34:44.6726+00:00.

source=pdf_text observed=2026-08-07T05:32:35.569542Z digest=sha256:bf515a36073a37588549fdfffe9fb5164def52b4348d2bc500aa91006d48e1fc

Observation 568ee7bd-27ae-4543-a33e-5957578b53b7 · outbound

This paper cites an unresolved cited work.

First-principles Quantum Insights into Bandgap Engineering, Valley Quantum Hall Effect, and Nonlinear Optical Response of Ge-Doped Graphene for Potential Optoelectronic Applications Unresolved cited work

Reference 26

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No event found in the named queried sources as of 2026-08-11T06:34:44.6726+00:00.

source=pdf_text observed=2026-08-07T05:32:35.572370Z digest=sha256:46a495fea98239cdda88f0210fed9e1a7f9d98169f73e41c0fcf43cfbc52105b

Observation 52523089-e7cd-409e-b33a-8350c71fba42 · outbound

This paper cites QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials,.

First-principles Quantum Insights into Bandgap Engineering, Valley Quantum Hall Effect, and Nonlinear Optical Response of Ge-Doped Graphene for Potential Optoelectronic Applications QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials,

Reference 27

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No event found in the named queried sources as of 2026-08-11T06:34:44.6726+00:00.

source=pdf_text observed=2026-08-07T05:32:35.575453Z digest=sha256:723574b78ceb1453c2c2837f91944c5dde35c8af4f11c89634b5c47e4bb1d370

Reference 28

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No event found in the named queried sources as of 2026-08-11T06:34:44.6726+00:00.

source=pdf_text observed=2026-08-07T05:32:35.578335Z digest=sha256:89203f1c3dfa40c955b5b94d0337f132f82229c80eb6a81cf3d9701dff61afa9

Observation 1921302b-975f-4fc5-b534-5f72ee795c2b · outbound

This paper cites Second harmonic spectroscopy to optically detect valley polarization in 2D materials.

First-principles Quantum Insights into Bandgap Engineering, Valley Quantum Hall Effect, and Nonlinear Optical Response of Ge-Doped Graphene for Potential Optoelectronic Applications Second harmonic spectroscopy to optically detect valley polarization in 2D materials

Reference 29

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No event found in the named queried sources as of 2026-08-11T06:34:44.6726+00:00.

source=pdf_text observed=2026-08-07T05:32:35.581055Z digest=sha256:24c3df7b98b22fcfe81f1a358a0ebeb37d33cadad22412b9a4328fe5e9cf53fa

Pith citing papers

Reference 8

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Source-reported events for the cited work

Unavailable: canonical work link unavailable.

source=pdf_text observed=2026-08-03T19:22:31.507261Z digest=sha256:6dea490c521d8bfc34241ded315149576a1594e057f72a9fe7fa1e85f9910648