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Integrated ⁹Be⁺ multi-qubit gate device for the ion-trap quantum computer
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Integrated ⁹Be⁺ multi-qubit gate device for the ion-trap quantum computer
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We demonstrate the experimental realization of a two-qubit M{\o}lmer-S{\o}rensen gate on a magnetic field-insensitive hyperfine transition in $^9$Be$^+$ ions using microwave-near fields emitted by a single microwave conductor embedded in a surface-electrode ion trap. The design of the conductor was optimized to produce a high oscillating magnetic field gradient at the ion position. The measured gate fidelity is determined to be $98.2\pm1.2\,\%$ and is limited by technical imperfections, as is confirmed by a comprehensive numerical error analysis. The conductor design can potentially simplify the implementation of multi-qubit gates and represents a self-contained, scalable module for entangling gates within the quantum CCD architecture for an ion-trap quantum computer.
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Cited by 1 Pith paper
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A framework for the benchmarking of transport-induced excitations in shuttling-based ion-trap quantum processors
A benchmarking framework decomposes shuttling protocols into primitives whose heating contributions combine algebraically to predict total excitations in ion-trap quantum processors, shown on an 8-qubit linear-transpo...
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