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Temperature Dependent Electronic Structure in a Higher Order Topological Insulator Candidate EuIn₂As₂

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arxiv 1911.03703 v1 pith:MOTSYQXX submitted 2019-11-09 cond-mat.mes-hall cond-mat.mtrl-sci

Temperature Dependent Electronic Structure in a Higher Order Topological Insulator Candidate EuIn₂As₂

classification cond-mat.mes-hall cond-mat.mtrl-sci
keywords hotiinsulatortopologicalhighermagneticorderstatestates
verification ladder T0 review T1 audit T2 compute T3 formal T4 reserved
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The higher order topological insulator (HOTI) has enticed enormous research interests owing to its novelty in supporting gapless states along the hinges of the crystal. Despite several theoretical predictions, enough experimental confirmation of HOTI state in crystalline solids is still lacking. It has been well known that interplay between topology and magnetism can give rise to various magnetic topological states including HOTI and Axion insulator states. Here using the high-resolution angle-resolved photoemission spectroscopy (ARPES) combined with the first-principles calculations, we report a systematic study on the electronic band topology across the magnetic phase transition in EuIn2As2 which possesses an antiferromagnetic ground state below 16 K. Antiferromagnetic EuIn2As2 has been predicted to host both the Axion insulator and HOTI phase. Our experimental results show the clear signature of the evolution of the topological state across the magnetic transition. Our study thus especially suited to understand the interaction of higher order topology with magnetism in materials.

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  1. Imaging the Magnetically Driven Reconstruction of the Electronic States in the Antiferromagnetic Topological Insulator EuSn$_2$As$_2$

    cond-mat.str-el 2026-05 unverdicted novelty 5.0

    Variable-temperature STM/STS on EuSn2As2 reveals two gaps below TN=24K: a 100 meV gap near EF from AFM zone folding and a 50 meV gap at the Dirac point linked to vacancy-induced mirror-symmetry breaking.