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Predictive simulations of the dynamical response of mesoscopic devices

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arxiv 2502.12960 v1 pith:O5ZL5JFD submitted 2025-02-18 cond-mat.mes-hall quant-ph

Predictive simulations of the dynamical response of mesoscopic devices

classification cond-mat.mes-hall quant-ph
keywords quantumtopologicaldynamicslow-energyresponsecoupleddevicesdots
verification ladder T0 review T1 audit T2 compute T3 formal T4 reserved
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As the complexity of mesoscopic quantum devices increases, simulations are becoming an invaluable tool for understanding their behavior. This is especially true for the superconductor-semiconductor heterostructures used to build Majorana-based topological qubits, where quantitatively understanding the interplay of topological superconductivity, disorder, semiconductor quantum dots, Coulomb blockade and noise has been essential for progress on device design and interpretation of measurements. In this paper, we describe a general framework to simulate the low-energy quantum dynamics of such complex systems. We illustrate our approach by computing the dispersive gate sensing (DGS) response of quantum dots coupled to topological superconductors. We start by formulating the DGS response as an open-system quantum dynamics problem, which allows a consistent treatment of drive backaction as well as quantum and classical noise. For microscopic quantum problems subject to Coulomb-blockade, where a direct solution in the exponentially large many-body Hilbert space would be prohibitive, we introduce a series of controlled approximations that incorporate ideas from tensor network theory and quantum chemistry to reduce this Hilbert space to a few low-energy degrees of freedom that accurately capture the low-energy quantum dynamics. We demonstrate the methods introduced in this paper on the example of a single quantum dot coupled to a topological superconductor and a microscopic realization of the fermion parity readout setup of Aghaee et al. arXiv:2401.09549 (2024).

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Cited by 3 Pith papers

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  2. 20 Second Parity Lifetime in an InAs--Pb Tetron Device

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