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Quantum Quenches from the Critical Point: Theory and Experimental Validation in a Trapped-Ion Quantum Simulator

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arxiv 2507.01087 v1 pith:P7Q5TUUC submitted 2025-07-01 quant-ph

Quantum Quenches from the Critical Point: Theory and Experimental Validation in a Trapped-Ion Quantum Simulator

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keywords quantumcriticaldefectexperimentalpointquenchesscalingsimulator
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We investigate quantum quenches starting from a critical point and experimentally probe the associated defect statistics using a trapped-ion quantum simulator of the transverse-field Ising model. The cumulants of the defect number distribution exhibit universal scaling with quench depth, featuring Gaussian behavior at leading order and systematic subleading corrections. Our results are in excellent agreement with both exact and approximate theoretical predictions, establishing quench-depth scaling as a powerful and precise experimental benchmark for nonequilibrium quantum critical dynamics.

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Cited by 1 Pith paper

Reviewed papers in the Pith corpus that reference this work. Sorted by Pith novelty score.

  1. Phase separation seeded by Z2 and U(1) topological defects from holography

    hep-th 2026-05 unverdicted novelty 6.0

    Holographic simulations demonstrate that Z2 and U(1) topological defects universally seed phase separation, with cores expanding into domains under a double-quench protocol.