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B. Arnaud

Identifiers

  • name variant B. Arnaud 0.60 · backfill

Papers (12)

  1. Direct observation of electron thermalization and electron-phonon coupling in photoexcited bismuth cond-mat.mtrl-sci · 2018 · author #9
  2. Observation of large multiple scattering effects in ultrafast electron diffraction on single crystal silicon cond-mat.mtrl-sci · 2017 · author #3
  3. Anisotropic thermal expansion of bismuth from first principles cond-mat.mtrl-sci · 2016 · author #1
  4. Electron cooling and Debye-Waller effect in photoexcited bismuth cond-mat.mtrl-sci · 2012 · author #1
  5. Coherent Phonon Coupling to Individual Bloch States in Photoexcited Bismuth cond-mat.mtrl-sci · 2011 · author #10
  6. Entropy driven atomic motion in laser-excited bismuth cond-mat.mtrl-sci · 2011 · author #3
  7. Huge excitonic effects in layered hexagonal boron nitride cond-mat.mtrl-sci · 2005 · author #1
  8. Excitonic and Quasiparticle Life Time Effects on Silicon Electron Energy Loss Spectrum from First Principles cond-mat.mtrl-sci · 2003 · author #1
  9. Pressure-Induced Simultaneous Metal-Insulator and Structural-Phase Transitions in LiH: a Quasiparticle Study cond-mat.mtrl-sci · 2003 · author #3
  10. Implementation of an all-electron GW approximation based on the PAW method without plasmon pole approximation: application to Si, SiC, AlAs, InAs, NaH and KH cond-mat.mtrl-sci · 2003 · author #2
  11. Implementation of an all-electron GW Approximation using the Projector Augmented Wave method: II. Application to the optical properties of semiconductors cond-mat.mtrl-sci · 1999 · author #1
  12. Implementation of an all-electron GW Approximation using the Projector Augmented Wave method: I. Formulation and application to the electronic structure of semiconductors cond-mat.mtrl-sci · 1999 · author #1

Mentions

  • 1210.4777 #1 · backfill · confidence 0.70 B. Arnaud
  • 1112.3949 #10 · backfill · confidence 0.70 B. Arnaud
  • 1104.1327 #3 · backfill · confidence 0.70 B. Arnaud

Frequent Coauthors