Albert G. Nasibulin (2)

Identifiers

• name variant Albert G. Nasibulin (2) 0.60 · backfill

Papers (1)

1. High-Yield of Memory Elements from Carbon Nanotube Field-Effect Transistors with Atomic Layer Deposited Gate Dielectric cond-mat.mes-hall · 2008 · author #6

Mentions

• 0801.2359 #6 · backfill · confidence 0.70 Albert G. Nasibulin (2)

Frequent Coauthors

• 2) 1 shared papers
• 2) ((1) University of Jyv\"askyl\"a 1 shared papers
• (2) Helsinki University of Technology 1 shared papers
• Andreas Johansson (1) 1 shared papers
• Esko I. Kauppinen (2) 1 shared papers
• Finland 1 shared papers
• Finland) 1 shared papers
• J. Jussi Toppari (1) 1 shared papers
• Marcus Rinki\"o (1) 1 shared papers
• Marina Y. Zavodchikova (1 1 shared papers
• P\"aivi T\"orm\"a (1 1 shared papers