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Fabio C. Fonseca

Identifiers

  • name variant Fabio C. Fonseca 0.60 · backfill

Papers (1)

  1. Oxygen vacancy engineering of TaOx-based resistive memories by Zr doping for improved variability and synaptic behavior physics.app-ph · 2020 · author #6

Mentions

  • 2012.09299 #6 · arxiv_oai · confidence 0.70 Fabio C. Fonseca

Frequent Coauthors