Takafumi Okuda

Identifiers

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Papers (2)

1. High-Speed Gate Driver Using GaN HEMTs for 20-MHz Hard Switching of SiC MOSFETs eess.SP · 2017 · author #1
2. Microscopic Mechanism of Carbon Annihilation upon SiC Oxidation due to Phosphorous Treatment: Density-Functional Calculations Combined with Ion Mass Spectrometry cond-mat.mtrl-sci · 2017 · author #3

Mentions

No mention provenance yet.

Frequent Coauthors

• Atsushi Oshiyama 1 shared papers
• Takashi Hikihara 1 shared papers
• Takuma Kobayashi 1 shared papers
• Tsunenobu Kimoto 1 shared papers
• Yu-ichiro Matsushita 1 shared papers