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Shigeo Ohnishi

Identifiers

  • name variant Shigeo Ohnishi 0.60 · backfill

Papers (1)

  1. Realization of the Switching Mechanism in Resistance Random Access Memory (RRAMTM) Devices: Structural and Electronic Properties Affecting Electron Conductivity in Halfnium Oxide-Electrode System through First Principles Calculations cond-mat.mtrl-sci · 2011 · author #5

Mentions

  • 1112.2500 #5 · backfill · confidence 0.70 Shigeo Ohnishi

Frequent Coauthors