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Thomas Auzelle

Identifiers

  • name variant Thomas Auzelle 0.60 · backfill

Papers (9)

  1. Growth of compositionally uniform $\mathrm{In}_{x}\mathrm{Ga}_{1-x}\mathrm{N}$ layers with low relaxation degree on GaN by molecular beam epitaxy cond-mat.mtrl-sci · 2024 · author #6
  2. Uniform large-area surface patterning achieved by metal dewetting for the top-down fabrication of GaN nanowire ensembles cond-mat.mtrl-sci · 2024 · author #4
  3. ScN/GaN($1\bar{1}00$): a new platform for the epitaxy of twin-free metal-semiconductor heterostructures cond-mat.mtrl-sci · 2024 · author #9
  4. Growth kinetics and substrate stability during high-temperature molecular beam epitaxy of AlN nanowires cond-mat.mtrl-sci · 2023 · author #8
  5. Density control of GaN nanowires at the wafer scale using self-assembled SiN$_x$ patches on sputtered TiN(111) cond-mat.mtrl-sci · 2022 · author #1
  6. A route for the top-down fabrication of ordered ultrathin GaN nanowires cond-mat.mtrl-sci · 2022 · author #8
  7. Interface recombination in Ga- and N-polar GaN/(Al,Ga)N quantum wells grown by molecular beam epitaxy cond-mat.mtrl-sci · 2021 · author #1
  8. Electronic properties of air-exposed GaN$(1\bar{1}00)$ and $(0001)$ surfaces after several device processing compatible cleaning steps physics.app-ph · 2019 · author #1
  9. Top-down fabrication of ordered arrays of GaN nanowires by selective area sublimation physics.app-ph · 2019 · author #2

Mentions

  • 2402.00702 #9 · arxiv_oai · confidence 0.70 Thomas Auzelle
  • 2410.04206 #6 · arxiv_oai · confidence 0.70 Thomas Auzelle
  • 2402.14375 #4 · arxiv_oai · confidence 0.70 Thomas Auzelle
  • 2306.09184 #8 · arxiv_oai · confidence 0.70 Thomas Auzelle
  • 2211.06274 #1 · arxiv_oai · confidence 0.70 Thomas Auzelle
  • 2211.03204 #8 · arxiv_oai · confidence 0.70 Thomas Auzelle
  • 2111.12969 #1 · arxiv_oai · confidence 0.70 Thomas Auzelle
  • 1908.03376 #1 · arxiv_oai · confidence 0.70 Thomas Auzelle
  • 1905.04948 #2 · arxiv_oai · confidence 0.70 Thomas Auzelle

Frequent Coauthors