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Katie R. Gann

Identifiers

  • name variant Katie R. Gann 0.60 · backfill

Papers (1)

  1. In situ etching of \b{eta}-Ga2O3 using tert-butyl chloride in an MOCVD system cond-mat.mtrl-sci · 2024 · author #3

Mentions

  • 2408.01574 #3 · arxiv_oai · confidence 0.70 Katie R. Gann

Frequent Coauthors