A graphene-ferroelectric device with domain-engineered periodic surface potential induces mini-bands and a band gap in single-layer graphene.
Y., Özyilmaz, B., Zhang, Y
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DFT study reports that As substitution and interstitial doping in MoS2 monolayer introduce midgap defect states and shift the Fermi level to produce p-type or n-type character depending on site.
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Ferrotronics for the creation of band gaps in Graphene
A graphene-ferroelectric device with domain-engineered periodic surface potential induces mini-bands and a band gap in single-layer graphene.
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First-principles study of the impact of As doping on the structural and electronic properties of MoS$_2$ monolayer
DFT study reports that As substitution and interstitial doping in MoS2 monolayer introduce midgap defect states and shift the Fermi level to produce p-type or n-type character depending on site.