Pressure enhances the activation gap in CaMn2Bi2 by ~70% at 20 kbar, supporting its classification as a Mn-based hybridization-gap semiconductor candidate where standard DFT fails.
Khazeni, Y X Jia, Vincent H Crespi, L Lu, A Zettl and Marvin L Cohen, Pressure dependence of the resistivity and magnetoresistance in single-crystal Nd0.62Pb0.30MnO3−δ, J
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Putative hybridization gap in CaMn$_{2}$Bi$_{2}$ under applied pressure
Pressure enhances the activation gap in CaMn2Bi2 by ~70% at 20 kbar, supporting its classification as a Mn-based hybridization-gap semiconductor candidate where standard DFT fails.