Nanostructure geometry on suspended van der Waals membranes provides deterministic control of multiaxial strain and bandgap profiles in 2D materials like Ga2Se2, with a two-component analytical model predicting shifts to within 12% error and extendable to other materials.
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Wafer-scale MOCVD-grown GaSe 2D nanosheets show defect-induced localized emission with single-photon character (g2(0)=0.15) suitable for classical and non-classical light sources.
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Deterministic Realization of Complex Local Strain Fields and Bandgap Profiles in Two-Dimensional Materials
Nanostructure geometry on suspended van der Waals membranes provides deterministic control of multiaxial strain and bandgap profiles in 2D materials like Ga2Se2, with a two-component analytical model predicting shifts to within 12% error and extendable to other materials.
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Localized Excitonic Emission in Wafer-Scale MOCVD-Grown GaSe 2D Nanosheets for Classical and Non-Classical Light Sources
Wafer-scale MOCVD-grown GaSe 2D nanosheets show defect-induced localized emission with single-photon character (g2(0)=0.15) suitable for classical and non-classical light sources.