An optically controlled 4H-SiC MOSFET achieves >10^6 on/off current ratio under UV illumination above 0.1 W/cm², exceeds 15 V gate-bias current at 0.031 W/cm², and switches in 1.44 ns rise time.
First Demonstration of Optically -Controlled 650 V Power GaN HEMT with Ultrafast Switching Speed
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High Performance 4H-SiC Optically Controlled MOS Transistor
An optically controlled 4H-SiC MOSFET achieves >10^6 on/off current ratio under UV illumination above 0.1 W/cm², exceeds 15 V gate-bias current at 0.031 W/cm², and switches in 1.44 ns rise time.