Fe-doped beta-Ga2O3(010) photocathode at 300 K produces ultracold 6 meV MTE electron emission from dopant states superimposed on phonon-mediated emission from an upper conduction band.
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In (In_xGa_{1-x})_2O_3 films the optical gap redshifts 1 eV up to x=0.46 while self-trapped hole PL redshifts 0.5 eV; saturation behavior indicates incipient phase separation at x~0.3, with Urbach energies larger than in MgZnO due to stronger hole-phonon coupling.
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Intrinsic emittance properties of an Fe-doped Beta-Ga2O3(010) photocathode: Ultracold electron emission at 300K and the polaron self-energy
Fe-doped beta-Ga2O3(010) photocathode at 300 K produces ultracold 6 meV MTE electron emission from dopant states superimposed on phonon-mediated emission from an upper conduction band.
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Optical Properties of Indium-Gallium-Oxide Microcrystalline Alloy Films: From the Visible to the Deep-UV
In (In_xGa_{1-x})_2O_3 films the optical gap redshifts 1 eV up to x=0.46 while self-trapped hole PL redshifts 0.5 eV; saturation behavior indicates incipient phase separation at x~0.3, with Urbach energies larger than in MgZnO due to stronger hole-phonon coupling.