PE-ALD HZO on tungsten electrodes achieves wake-up-free ferroelectric switching and enhanced endurance up to 125°C primarily due to the beneficial oxidized tungsten interfacial layer, unlike on TiN.
Ferroelectricity of Hf xZr1−xO2 thin films fabricated by 300 °C low temperature process with plasma-enhanced atomic layer deposition
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Engineering Wake-Up-Free Ferroelectric Capacitors with Enhanced High-Temperature Reliability
PE-ALD HZO on tungsten electrodes achieves wake-up-free ferroelectric switching and enhanced endurance up to 125°C primarily due to the beneficial oxidized tungsten interfacial layer, unlike on TiN.