DFT study reports that As substitution and interstitial doping in MoS2 monolayer introduce midgap defect states and shift the Fermi level to produce p-type or n-type character depending on site.
B., ACS Nano, 2011,5, No
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First-principles study of the impact of As doping on the structural and electronic properties of MoS$_2$ monolayer
DFT study reports that As substitution and interstitial doping in MoS2 monolayer introduce midgap defect states and shift the Fermi level to produce p-type or n-type character depending on site.