Nanostructuring Sb2Se3 phase-change material on silicon waveguides achieves ~0.1 dB loss per π phase shift and record endurance exceeding 100 million cycles in nonvolatile photonic devices.
Aleksic, in 2017 14th International Conference on Telecommunications (Con℡), 2017, pp
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Increased endurance of nonvolatile photonics enabled by nanostructured phase-change materials
Nanostructuring Sb2Se3 phase-change material on silicon waveguides achieves ~0.1 dB loss per π phase shift and record endurance exceeding 100 million cycles in nonvolatile photonic devices.