Displacement fields in rhombohedral pentalayer graphene cause asymmetric flattening of conduction versus valence bands, producing near-ideal quantum geometry that supports fractional quantum anomalous Hall states under electron doping.
Tunable high-Chern-number Chern insulators in rhombohedral tetralayer graphene/hBN moir\'e superlattices
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abstract
Moir\'e superlattices based on rhombohedral multilayer graphene have emerged as a highly tunable platform for engineering correlated topological phases. Here, we systematically investigate the transport properties of the hole-doped side in rhombohedral tetralayer graphene/ hexagonal boron nitride (hBN) moir\'e superlattices across a range of twist angles and alignment orientations. Notably, we observed multiple high-Chern-number Chern insulators, including the previously reported integer Chern insulator with Chern number C = -4 at moir\'e filling factor v = -1 and newly discovered symmetry-broken Chern insulating states with C = +3, $\pm$2, $\pm$1 at fractional moir\'e fillings of v = -2.5 or -2.6. These Chern insulating states emerge in both hBN alignment, but exhibit a sensitive moir\'e wavelength dependence. Our findings demonstrate the exceptional tunability of these high-Chern-number states via moir\'e wavelength, displacement electric field and external magnetic field, underscoring the distinct topological landscape realized in hole-doped RTG/hBN moir\'e superlattices.
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cond-mat.mes-hall 1years
2026 1verdicts
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Field-induced asymmetric band flattening and ideal quantum geometry in rhombohedral graphene
Displacement fields in rhombohedral pentalayer graphene cause asymmetric flattening of conduction versus valence bands, producing near-ideal quantum geometry that supports fractional quantum anomalous Hall states under electron doping.