Substitutional oxygen replacing nitrogen (ON) in hBN produces the 3.5 eV luminescence via hole capture, with a calculated emission energy of 3.63 eV and lineshape matching experiment.
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CBVB-nH complexes (n=0-3) are energetically favorable in MOVPE-grown hBN due to electrostatic attraction and match observed 1.90 eV and 2.24 eV emission peaks via hole capture.
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Substitutional oxygen as the origin of the 3.5 eV luminescence in hexagonal boron nitride
Substitutional oxygen replacing nitrogen (ON) in hBN produces the 3.5 eV luminescence via hole capture, with a calculated emission energy of 3.63 eV and lineshape matching experiment.
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CBVB-nH complexes as prevalent defects in metal-organic vapor-phase epitaxy-grown hexagonal boron nitride
CBVB-nH complexes (n=0-3) are energetically favorable in MOVPE-grown hBN due to electrostatic attraction and match observed 1.90 eV and 2.24 eV emission peaks via hole capture.