The paper presents evidence supporting trap-influenced band transport in quasi-2D channels for high-mobility AOS FETs by combining selected prior results on morphology, electronic structure, and percolation effects.
2 SB Lisesivdin, A Yildiz, N Balkan, MEHMET Kasap, SÜLEYMAN Ozcelik, and E Ozbay, Journal of Applied Physics 108 (1) (2010)
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Physical Basis for Band Transport and Dimensionality in Amorphous Oxide Semiconductor Field-Effect Transistors
The paper presents evidence supporting trap-influenced band transport in quasi-2D channels for high-mobility AOS FETs by combining selected prior results on morphology, electronic structure, and percolation effects.