Dual AFE phase-transition modulation of evanescent decay states plus interfacial spin filtering in Fe3GaTe2/bilayer-In2Se3/Fe3GaTe2 yields TER of ~7600% and TMR >680000% with six room-temperature non-volatile states.
Substantial Enhancement of Perpendicular Magnetic Anisotropy in Van Der Waals Ferromagnetic Fe3GaTe2 Film Due to Pressure Application
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Momentum-Resolved Tunneling Modulation Induced Giant Multistate Resistance in Antiferroelectric Multiferroic Junction
Dual AFE phase-transition modulation of evanescent decay states plus interfacial spin filtering in Fe3GaTe2/bilayer-In2Se3/Fe3GaTe2 yields TER of ~7600% and TMR >680000% with six room-temperature non-volatile states.