Nanostructuring Sb2Se3 phase-change material on silicon waveguides achieves ~0.1 dB loss per π phase shift and record endurance exceeding 100 million cycles in nonvolatile photonic devices.
(PDF) A New Family of Ultralow Loss Reversible Phase‐Change Materials for Photonic Integrated Circuits: Sb 2 S 3 and Sb 2 Se 3
1 Pith paper cite this work. Polarity classification is still indexing.
1
Pith paper citing it
fields
physics.optics 1years
2026 1verdicts
UNVERDICTED 1representative citing papers
citing papers explorer
-
Increased endurance of nonvolatile photonics enabled by nanostructured phase-change materials
Nanostructuring Sb2Se3 phase-change material on silicon waveguides achieves ~0.1 dB loss per π phase shift and record endurance exceeding 100 million cycles in nonvolatile photonic devices.