Nanosecond pulsed illumination at 532-1064 nm on the Si-SiO2 interface in atmospheric SeBDs enhances plasma emission and reduced electric field via wavelength-dependent photogeneration of carriers in the depletion region, analogous to MOS photodetector behavior.
Microplasma devices fabricated in silicon, ceramic, and 37 metal/polymer structures: arrays, emitters and photodetectors.Journal of Physics D: Applied Physics, 36(23):2869
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Photonic Interactions with Semiconducting Barrier Discharges
Nanosecond pulsed illumination at 532-1064 nm on the Si-SiO2 interface in atmospheric SeBDs enhances plasma emission and reduced electric field via wavelength-dependent photogeneration of carriers in the depletion region, analogous to MOS photodetector behavior.