Stark tuning of T centres in silicon nanophotonic cavities with p-i-n diodes achieves 30 GHz shifts, resonance for 55% of on-chip emitters, tunable lifetime reduction, and a model predicting large entanglement-rate gains.
Title resolution pending
2 Pith papers cite this work. Polarity classification is still indexing.
2
Pith papers citing it
citation-role summary
background 1
citation-polarity summary
years
2026 2verdicts
UNVERDICTED 2roles
background 1polarities
background 1representative citing papers
Self-assembled telecom color centers in silicon form during ultra-low-temperature MBE growth, with lower chamber pressure suppressing unwanted luminescence background as shown by PL and positron spectroscopy.
citing papers explorer
-
Spectral tuning of single T centres by the Stark effect
Stark tuning of T centres in silicon nanophotonic cavities with p-i-n diodes achieves 30 GHz shifts, resonance for 55% of on-chip emitters, tunable lifetime reduction, and a model predicting large entanglement-rate gains.
-
Self-Assembled Telecom Color Centers in Silicon and Their Growth Environment
Self-assembled telecom color centers in silicon form during ultra-low-temperature MBE growth, with lower chamber pressure suppressing unwanted luminescence background as shown by PL and positron spectroscopy.