Shaping the STT pulse reduces write error rates and improves robustness in field-free SOT+STT switching of imperfect top-pinned SOT-MRAM devices.
Basic principles of STT-MRAM cell operation in memory arrays
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Pulse Shaping to Mitigate the Impact of Device Imperfections in Field-Free Switching Using Combined Spin-Orbit and Spin-Transfer Torques
Shaping the STT pulse reduces write error rates and improves robustness in field-free SOT+STT switching of imperfect top-pinned SOT-MRAM devices.