A GaP waveguide chip with multi-azimuthal mode interference and saturated absorption sectioning enables wide-field 3D nanoscopy at λ/10 lateral and λ/19 axial resolution by covering the full spatial-frequency band.
Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV
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2019 1verdicts
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Wide-field 3D nanoscopy on chip through large and tunable spatial-frequency-shift effect
A GaP waveguide chip with multi-azimuthal mode interference and saturated absorption sectioning enables wide-field 3D nanoscopy at λ/10 lateral and λ/19 axial resolution by covering the full spatial-frequency band.