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Leakage mechanism and cycling behavior of ferroelectric Al₀.₇Sc₀.₃N

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2026 1 2025 1

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UNVERDICTED 2

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Low-Field Ferroelectricity in 10 nm AlBScN Thin Films

cond-mat.mtrl-sci · 2025-11-11 · unverdicted · novelty 5.0

10 nm AlBScN thin films exhibit ferroelectric switching at 2.2 MV/cm in C-V tests and 4.6 MV/cm in PUND measurements with significantly reduced leakage and a breakdown-to-coercive field ratio of ~2.2.

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